CY25CAJ-8F Nch IGBT for Strobe Flash REJ03G1202-0200 Preliminary Rev.2.00 May 24, 2005 Features • • • • Ultra small surface mount package (VSON-8) VCES: 400 V ICM: 150 A Drive voltage: 4 V Outline PVSN0008JA-A (Package Name: VSON-8<TNP-8DBV>) 8 5 7 6 5 1, 2 : Emitter 3 : Emitter (for the gate drive) 4 : Gate 5, 6, 7, 8 : Collector 8 4 1 Note: 1 2 3 4 PIN 3 is for the Gate drive only. Note that current from the main circuit cannot flow into this section. (Please see page 3) Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Symbol VCES VGES VGEM Ratings 400 ±6 ±8 Unit V V V ICM 150 A Tj Tstg – 40 to +150 – 40 to +150 °C °C Collector current (Pulse) Junction temperature Storage temperature Rev.2.00, May 25, 2005, page 1 of 4 Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) CY25CAJ-8F Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-Emitter saturation voltage Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Min. 450 — — 0.5 — Typ. — — — 0.7 4.0 Max. — 10 ±10 1.5 6.0 Unit V µA µA V V Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±8 V, VCS = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 4 V Cies — 3400 — pF VCE = 25 V, VGE = 10 V, f = 1MHz Input capacitance Performance Curves Pulse Collector Current ICP (A) Maximum Collector Current vs. Gate - Emitter Voltage 200 TC = 70°C CM = 400 µF RG = 30 Ω 150 100 50 0 0 Rev.2.00, May 25, 2005, page 2 of 4 2 4 6 8 Gate - Emitter Voltage VGE (V) CY25CAJ-8F Application Example VCM Trigger Transformer CM 8 + – Xe Tube 7 6 5 VGG Control Signal 1 VCM 2 3 4 RD5CYD08 RD5CYDT08 (IGBT Drive IC) Recommended Operation Maximum Operation Conditions Conditions 330 V 350 V ICP 130 A 150 A CM 300 µF 400 µF VGE 5V 4V Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ µs. In general, when RG (off) = 30 Ω, it is satisfied. 3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor. (CM = 400 µF) Repetition period under full luminescence condition is over 3 seconds. 5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V. Rev.2.00, May 25, 2005, page 3 of 4 CY25CAJ-8F Package Dimensions JEITA Package Code P-VSON8-3x4.4-0.65 RENESAS Code PVSN0008JA-A Package Name TNP-8DBV MASS[Typ.] 0.032g D Lp L1 1.95 ± 0.1 E HE 0.15MAX Reference Symbol c Dimension in Millimeters Min Nom Max D 2.90 3.00 3.10 E 4.30 4.40 A b 0.25 0.30 e 0.65 Lp 0.35 x e b M c y 0.40 0.08 y x 4.50 0.95 A 0.10 0.09 0.15 0.25 HE 4.70 4.80 4.90 L1 0.10 0.20 0.30 Order Code Lead form Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name – T +Direction (1 or 2)+3 Note : Please confirm the specification about the shipping in detail. Rev.2.00, May 25, 2005, page 4 of 4 Standard order code example CY25CAJ-8F-T13 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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