ON MJD41C Complementary power transistor Datasheet

MJD41C (NPN)
MJD42C (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
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Designed for general purpose amplifier and low speed switching
applications.
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS
20 WATTS
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
Monolithic Construction With Built−in Base − Emitter Resistors
Epoxy Meets UL 94, V−0 @ 0.125 in.
ESD Ratings: Human Body Model, 3B 8000 V
Machine Model, C 400 V
MARKING
DIAGRAMS
4
DPAK
CASE 369C
STYLE 1
1 2
3
MAXIMUM RATINGS
Rating
YWW
J4xC
Symbol
Max
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector Current − Continuous
Peak
IC
6
10
Adc
Base Current
IB
2
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
PD
1.75
0.014
W
W/°C
ORDERING INFORMATION
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Collector−Emitter Voltage
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to
+ 150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
4
DPAK−3
CASE 369D
STYLE 1
1
2
YWW
J4xC
3
Y
WW
x
= Year
= Work Week
= 1 or 2
Preferred devices are recommended choices for future use
and best overall value.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient*
RJA
71.4
°C/W
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 5
1
Publication Order Number:
MJD41C/D
MJD41C (NPN) MJD42C (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
−
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICEO
−
50
Adc
Collector Cutoff Current
(VCE = 100 Vdc, VEB = 0)
ICES
−
10
Adc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
−
0.5
mAdc
30
15
−
75
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 0.3 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
−
Collector−Emitter Saturation Voltage
(IC = 6 Adc, IB = 600 mAdc)
VCE(sat)
−
1.5
Vdc
Base−Emitter On Voltage
(IC = 6 Adc, VCE = 4 Vdc)
VBE(on)
−
2
Vdc
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
3
−
MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
—
−
DYNAMIC CHARACTERISTICS
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. fT = hfe• ftest.
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD41CRL
DPAK
369C
1800 Tape & Reel
MJD41CT4
DPAK
369C
2500 Tape & Reel
MJD42C
DPAK
369C
75 Units / Rail
MJD42C1
DPAK−3
369D
75 Units / Rail
MJD42CRL
DPAK
369C
1800 Tape & Reel
MJD42CT4
DPAK
369C
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MJD41C (NPN) MJD42C (PNP)
PD, POWER DISSIPATION (WATTS)
TYPICAL CHARACTERISTICS
TA
2.5
TC
25
2
20
VCC
+30 V
+11 V
1.5
15
TA SURFACE MOUNT
10
0.5
5
0
0
25
50
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
75
100
125
150
Figure 2. Switching Time Test Circuit
2
500
VCE = 2 V
300
200
TJ = 150°C
100
70
50
0.7
0.5
25°C
30
20
TJ = 25°C
VCC = 30 V
IC/IB = 10
1
t, TIME (s)
µ
hFE , DC CURRENT GAIN
−4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
MSB5300 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 1. Power Derating
10
7
5
0.06
0.3
0.2
tr
0.1
0.07
−55 °C
td @ VBE(off) ≈ 5 V
0.05
0.2
0.1
0.3 0.4
0.6
1
2
4
0.03
0.02
0.06 0.1
6
0.2
0.4
1
2
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
Figure 4. Turn−On Time
4
6
5
TJ = 25°C
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
3
2
1.6
t, TIME (s)
µ
ts
1.2
VCE(sat) @ IC/IB = 10
VBE @ VCE = 4 V
0.2 0.3 0.4
0.3
0.2
0.1
0.07
0.05
0.06 0.1
VBE(sat) @ IC/IB = 10
0.1
1
0.7
0.5
tf
0.4
0
0.06
0.6
IC, COLLECTOR CURRENT (AMP)
2
0.8
D1
51
−9 V
1
SCOPE
RB
0
TC
T, TEMPERATURE (°C)
V, VOLTAGE (VOLTS)
RC
25 s
0.6
1
2
IC, COLLECTOR CURRENT (AMP)
0.2
0.4 0.6
1
2
IC, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
Figure 6. Turn−Off Time
3
4
6
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3
4
6
300
2
TJ = 25°C
TJ = 25°C
200
1.6
IC = 1 A
2.5 A
C, CAPACITANCE (pF)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
MJD41C (NPN) MJD42C (PNP)
5A
1.2
0.8
Cib
100
70
Cob
50
0.4
0
10
20
30
50
100
200 300
IB, BASE CURRENT (mA)
500
1000
30
0.5
1
3
10
2
5
20
VR, REVERSE VOLTAGE (VOLTS)
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.3
0.2
0.2
0.05
0.02
0.03
P(pk)
RJC(t) = r(t) RJC
RJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) JC(t)
0.1
0.1
0.07
0.05
50
Figure 8. Capacitance
Figure 7. Collector Saturation Region
1
0.7
0.5
30
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 9. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
500s
5
3
2
1ms
dc
5ms
1
0.5
0.3
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.1
0.05
0.03
0.01
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100s
TC = 25°C SINGLE PULSE
TJ = 150°C
1
MJD41C, 42C
2
3
5 7 10
20 30
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Bias
Safe Operating Area
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4
MJD41C (NPN) MJD42C (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
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5
mm inches
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MJD41C (NPN) MJD42C (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
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MJD41C/D