IRFHS8342PbF HEXFET® Power MOSFET VDS 30 V VGS max ±20 V RDS(on) max 16.0 mΩ (@VGS = 10V) T OP VIEW D 1 4.2 (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 8.5 D D S G 3 G 5 D nC d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications • Control MOSFET for Buck Converters • System/Load Switch Features and Benefits Features Low RDSon (≤ 16.0mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFHS8342TRPbF IRFHS8342TR2PbF PQFN 2mm x 2mm PQFN 2mm x 2mm results in Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom)= 70°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Notes through 1 f f c f 30 ±20 8.8 Units V d 7.1 19 15 8.5 d d d 76 2.1 1.3 0.02 -55 to + 150 A W W/°C °C are on page 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs Qgd Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 22 13 20 1.8 -5.8 ––– ––– ––– ––– ––– 4.2 8.7 1.5 1.3 3.0 1.9 5.9 15 5.2 5.0 600 100 46 Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 8.5A 16 mΩ 25 VGS = 4.5V, ID = 6.8A 2.35 V V = VGS, ID = 25μA ––– mV/°C DS 1.0 VDS = 24V, VGS = 0V μA 150 VDS = 24V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 10V, ID = 8.5A ––– nC VGS = 4.5V, VDS = 15V, ID = 8.5A ––– VDS = 15V nC VGS = 10V ––– ID = 8.5A (See Fig. 6 & 16) ––– ––– nC VDS = 16V, VGS = 0V Ω ––– VDD = 15V, VGS = 4.5V ––– ID = 8.5A ––– ns ––– RG=1.8Ω ––– See Fig.17 ––– VGS = 0V ––– pF VDS = 25V ƒ = 1.0MHz ––– Min. Typ. Max. ––– ––– 8.5 ––– ––– 76 ed e d d d e d Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c d Units A Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. ––– ––– 1.0 V TJ = 25°C, IS = 8.5A , VGS = 0V ––– 11 17 ns TJ = 25°C, IF = 8.5A , VDD = 15V ––– 13 20 nC di/dt = 330A/μs Time is dominated by parasitic Inductance d d e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient (<10s) g g f f Typ. ––– ––– ––– ––– Max. 13 90 60 42 Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Rθ is measured at TJ of approximately 90°C. 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 7.0V 5.0V 4.5V 3.5V 3.3V 2.8V 2.5V 1 2.5V BOTTOM 10 2.5V ≤60μs PULSE WIDTH 1 0.1 0.1 1 10 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C TJ = 150°C 10 TJ = 25°C VDS = 15V ≤60μs PULSE WIDTH 1.0 ID = 8.5A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 7.0V 5.0V 4.5V 3.5V 3.3V 2.8V 2.5V Crss ID= 8.5A 12 10 VDS = 24V VDS = 15V VDS = 6.0V 8 6 4 2 0 10 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 www.irf.com © 2013 International Rectifier 2 4 6 8 10 12 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 TJ = 150°C 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100μsec 10 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 10msec Limited by Wire Bond 1msec DC 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.1 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 20 2.2 VGS(th), Gate threshold Voltage (V) LIMITED BY PACKAGE ID, Drain Current (A) 16 12 8 4 0 25 50 75 100 125 2.0 ID = 25μA 1.8 1.6 1.4 1.2 1.0 150 -75 -50 -25 TC, Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 100 10 D = 0.50 0.20 0.10 0.05 1 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF ( Ω) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (mΩ) 35 ID = 8.5A 30 25 20 TJ = 125°C 15 10 TJ = 25°C 5 0 5 10 15 20 30 Vgs = 4.5V 25 20 15 Vgs = 10V 10 5 0 10 20 30 40 50 60 70 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 600 Single Pulse Power (W) 500 400 300 200 100 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 14. Typical Power vs. Time D.U.T Driver Gate Drive + - P.W. + * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 VGS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 17a. Switching Time Test Circuit 6 Qgodr Fig 16b. Gate Charge Waveform Fig 16a. Gate Charge Test Circuit VDS Qgd www.irf.com © 2013 International Rectifier 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF PQFN 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 2x2 Outline Part Marking 8342 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF PQFN 2x2 Outline Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRFHS8342PbF † Qualification information † Industrial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level PQFN 2mm x 2mm RoHS compliant †† guidelines ) MS L1 †† (per JEDE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Revision History Date 9/9/2013 12/17/2013 Comments •Updated data sheet with new IR corporate template. • Updated Trr/Qrr test condition from "VDD = 13V" to "VDD = 15V" on page 2 • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated Qual level from "Consumer" to "Industrial" on page 1, 9 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013