IRF IRF7809AVPBF N-channel application-specific mosfet Datasheet

PD - 95212A
IRF7809AVPbF
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
• 100% Tested for Rg
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7809AV offers particulary low RDS(on) and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
Top View
SO-8
DEVICE CHARACTERISTICS
IRF7809AV
RDS(on)
7.0mΩ
QG
41nC
Qsw
14nC
Qoss
30nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 90°C
Pulsed Drain Current
Power Dissipation
Symbol
IRF7809A V
VDS
30
VGS
±12
ID
13.3
14.6
IDM
TA = 25°C
PD
TL = 90°C
Units
V
A
100
2.5
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
2.5
A
Pulsed Source Current
ISM
50
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
50
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
08/23/05
IRF7809AVPbF
Electrical Characteristics
Parameter
Min
Typ
Max
Units
30
–
–
V
Conditions
7.0
9.0
mΩ
VGS = 4.5V, ID = 15A‚
V
VDS = VGS,ID = 250µA
150
µA
VDS = 24V, VGS = 0,
±100
nA
VGS = 0V, ID = 250µA
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-Source Leakage
Current
IDSS
Gate-Source Leakage
Current*
IGSS
Total Gate Chg Cont FET
QG
41
62
VGS=5V, ID=15A, VDS =20V
Total Gate Chg Sync FET
QG
36
54
VGS = 5V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
7.0
Post-Vth
Gate-Source Charge
QGS2
2.3
Gate to Drain Charge
QGD
12
1.0
30
Current*
VDS = 24V, V GS = 0
Tj = 100°C
VDS = 20V, ID = 15A
nC
ID=15A, V DS=16V
Switch Chg(Qgs2 + Qgd)
Qsw
14
Output Charge*
Qoss
30
45
Gate Resistance
RG
1.5
3.0
Turn-on Delay Time
td (on)
14
Rise Time
tr
36
Turn-off Delay Time
td (off)
96
21
VDS = 16V, V GS = 0
Ω
VDD = 16V, ID = 15A
ns
VGS = 5V
Clamped Inductive Load
10
Fall Time
tf
Input Capacitance
Ciss
–
3780
–
Output Capacitance
Coss
–
1060
–
pF
Crss
–
130
–
Typ
Max
Units
1.3
V
Reverse Transfer Capacitance
VGS = ±12V
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge„
Qrr
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
Notes:
2

‚
ƒ
„
120
nC
Conditions
IS = 15A‚, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
150
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values measured at VGS = 4.5V, IF = 15A.
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IRF7809AVPbF
1000
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
2.5V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
TOP
1
10
100
100
2.5V
10
0.1
Fig 1. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
TJ = 25 ° C
V DS = 15V
20µs PULSE WIDTH
2.6
2.8
3.0
3.2
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
10
2.4
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100
20µs PULSE WIDTH
TJ = 150 °C
3.4
ID = 15A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7809AVPbF
6000
4000
Ciss
3000
2000
Coss
1000
0
8
6
4
2
Crss
1
10
ID = 15A
VDS = 20V
VGS , Gate-to-Source Voltage (V)
5000
C, Capacitance (pF)
10
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
100
VDS , Drain-to-Source Voltage (V)
0
20
30
40
50
60
70
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
10
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
100
TJ = 150 ° C
100
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.2
10us
100us
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7809AVPbF
16
VDS
ID , Drain Current (A)
V GS
D.U.T.
RG
12
RD
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7809AVPbF
R DS(on) , Drain-to -Source On Resistance ( Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.008
VGS = 4.5V
0.007
0.006
VGS = 10V
0.005
0
20
40
60
80
100
0.012
0.010
ID = 15A
0.008
0.006
120
2.5
ID , Drain Current (A)
3.0
3.5
4.0
4.5
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3µF
D.U.T.
+
V
- DS
QGD
500
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2µF
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
400
BOTTOM
ID
6.7A
9.5A
15A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7809AVPbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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IRF7809AVPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05
8
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