Lyontek LY6125616ML-20LL 5v 256k x 16 bit high speed cmos sram Datasheet

®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 2.0
Rev. 2.1
Rev. 2.2
Rev. 2.3
Rev. 2.4
Description
Initial Issue
Revised VIL = 0.6V => 0.8V
Revised Package Outline Dimension(TSOP-II)
Added LL Spec.
Revised Test Condition of ISB1/IDR
Added -12ns Spec.
Revised ICC and ISB1
Added I grade
Revised ABSOLUTE MAXIMUN RATINGS
Revised Test Condition of ICC
Revised FEATURES & ORDERING INFORMATION Lead free
and green package available to Green package available
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Added packing type in ORDERING INFORMATION
Added package type TFBGA
Revised ORDERING INFORMATION in page 12
Revised -12ns spec as -10ns spec and related parameter
Revised ORDERING INFORMATION in page 11
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
Mar.23.2006
Jun.9.2006
Apr.12.2007
Jun.25.2007
Apr.17.2009
May.6.2010
Aug.30.2010
July.03.2013
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 10/15/20/25ns
„ Low power consumption:
Operating current : 215/140/110/100mA(MAX.)
Standby current :
15mA(MAX. for 10ns)
3mA(MAX. for 15/20/25ns)
100µA( (MAX. for 15/20/25ns LL version)
„ Single 5V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
„ Data retention voltage : 2.0V (MIN.)
„ Green package available
„ Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
The LY6125616 is a 4,194,304-bit low power CMOS
static random access memory organized as 262,144
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY6125616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6125616 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
PRODUCT FAMILY
Product
Family
LY6125616
LY6125616(I)
LY6125616
LY6125616(E)
LY6125616(I)
LY6125616(LL)
LY6125616(LLI)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
-40 ~ 85℃
Vcc
Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
10ns
10ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
Power Dissipation
Standby(ISB1)
Operating(Icc)
15mA(MAX.)
215mA(MAX.)
15mA(MAX.)
215mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A17
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
WE#
OE#
LB#
UB#
SYMBOL
DESCRIPTION
A0 - A17
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
DECODER
I/O DATA
CIRCUIT
256Kx16
MEMORY ARRAY
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
COLUMN I/O
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
PIN CONFIGURATION
A
LB# OE#
A0
A1
B
DQ8 UB#
A3
A4
CE# DQ0
C
DQ9 DQ10 A5
A6
DQ1 DQ2
D
Vss DQ11 A17
A7
DQ3 Vcc
E
Vcc DQ12 NC
A16 DQ4 Vss
F
DQ14 DQ13 A14
A15 DQ5 DQ6
G
DQ15 NC
A12
A13 WE# DQ7
A10
H
NC
A8
A9
1
2
3
4
TFBGA
A2
NC
A11
NC
5
6
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
SYMBOL
VT1
VT2
Operating Temperature
TA
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
IOUT
RATING
-0.5 to 6.5
-0.5 to VCC+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
OE#
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
DOUT
High – Z
DOUT
High – Z
DOUT
DOUT
DIN
High – Z
DIN
High – Z
DIN
DIN
UB#
X
X
H
H
L
L
H
L
L
SUPPLY CURRENT
ISB1
ICC
ICC
ICC
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
VCC
*1
Input High Voltage
VIH
*2
Input Low Voltage
VIL
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
Output Leakage
VCC ≧ VOUT ≧ VSS,
ILO
Current
Output Disabled
Output High Voltage
VOH IOH = -4mA
Output Low Voltage
VOL
IOL = 8mA
10
Cycle time = Min.
15
Average Operating
ICC
CE# = VIL , II/O = 0mA
Power supply Current
20
Others at VIL or VIH
25
10
Standby Power
CE# ≧VCC - 0.2V
15/20/25
ISB1
Supply Current
Others at 0.2V / VCC-0.2V
15/20/25LL
MIN.
4.5
2.2
- 0.3
-1
TYP.
5.0
-
*4
MAX.
5.5
VCC+0.3
0.8
1
UNIT
V
V
V
µA
-1
-
1
µA
2.4
-
100
80
75
0.1
20
0.4
215
140
110
100
15
5
3*
6
100*
V
V
mA
mA
mA
mA
mA
mA
µA
Notes:
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
5. 1mA for special request
6. 50µA for special request
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM. LY6125616-10 LY6125616-15 LY6125616-20 LY6125616-25 UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
tRC
10
15
20
25
ns
Address Access Time
tAA
10
15
20
25
ns
Chip Enable Access Time
tACE
10
15
20
25
ns
Output Enable Access Time
tOE
5
7
8
9
ns
Chip Enable to Output in Low-Z
tCLZ*
2
4
4
4
ns
Output Enable to Output in Low-Z tOLZ*
0
0
0
0
ns
Chip Disable to Output in High-Z tCHZ*
5
7
8
9
ns
Output Disable to Output in High-Z tOHZ*
5
7
8
9
ns
Output Hold from Address Change tOH
3
3
3
3
ns
LB#, UB# Access Time
tBA
5
7
8
9
ns
LB#, UB# to High-Z Output
tBHZ*
5
7
8
9
ns
LB#, UB# to Low-Z Output
tBLZ*
2
4
4
4
ns
(2) WRITE CYCLE
PARAMETER
SYM. LY6125616-10 LY6125616-15 LY6125616-20 LY6125616-25 UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write Cycle Time
tWC
10
15
20
25
ns
Address Valid to End of Write
tAW
8
12
16
20
ns
Chip Enable to End of Write
tCW
8
12
16
20
ns
Address Set-up Time
tAS
0
0
0
0
ns
Write Pulse Width
tWP
8
10
11
12
ns
Write Recovery Time
tWR
0
0
0
0
ns
Data to Write Time Overlap
tDW
6
8
9
10
ns
Data Hold from End of Write Time tDH
0
0
0
0
ns
Output Active from End of Write
tOW*
2
4
5
6
ns
Write to Output in High-Z
tWHZ*
6
8
9
10
ns
LB#, UB# Valid to End of Write
tBW
8
12
16
20
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
LB#,UB#
tBA
OE#
tOE
tOH
tOHZ
tBHZ
tCHZ
tOLZ
tBLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE#is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low.
3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter.
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
tBW
LB#,UB#
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
(4)
tDH
Data Valid
Din
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
WRITE CYCLE 3 (LB#,UB# Controlled) (1,2,5,6)
tWC
Address
tAW
tWR
CE#
tAS
tCW
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
Din
tDH
Data Valid
Notes :
1.WE#,CE#, LB#, UB# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed
on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
VCC for Data Retention
VDR
CE# ≧ VCC - 0.2V
2.0
10
VCC = 2.0V
15/20/25
Data Retention Current
IDR
CE# ≧ VCC - 0.2V
other pins at 0.2V or VCC-0.2V 15/20/25LL
See Data Retention
Chip Disable to Data
0
tCDR
Waveforms (below)
Retention Time
Recovery Time
tR
tRC*
tRC* = Read Cycle Time
DATA RETENTION WAVEFORM
VDR ≧ 2.0V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8
TYP. MAX. UNIT
5.5
V
10
mA
0.05
2
mA
10
50
µA
-
-
ns
-
-
ns
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
PACKAGE OUTLINE DIMENSION
44-pin 400mil TSOP-Ⅱ Package Outline Dimension
SYMBOLS
A
A1
A2
b
c
D
E
E1
e
L
ZD
y
Θ
DIMENSIONS IN MILLMETERS
MIN.
NOM.
MAX.
1.20
0.05
0.10
0.15
0.95
1.00
1.05
0.30
0.45
0.12
0.21
18.212
18.415
18.618
11.506
11.760
12.014
9.957
10.160
10.363
0.800
0.40
0.50
0.60
0.805
0.076
o
o
o
3
6
0
DIMENSIONS IN MILS
MIN.
NOM.
MAX.
47.2
2.0
3.9
5.9
37.4
39.4
41.3
11.8
17.7
4.7
8.3
717
725
733
453
463
473
392
400
408
31.5
15.7
19.7
23.6
31.7
3
o
o
o
0
3
6
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
48-ball 6mm × 8mm TFBGA Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
ORDERING INFORMATION
Package Type
44Pin(400mil)
TSOP-II
Access Time
(Speed)(ns)
10
Temperature
Range(℃)
0℃~70℃
-40℃~85℃
15
0℃~70℃
Packing
Type
Lyontek Item No.
Tray
LY6125616ML-10
Tape Reel
LY6125616ML-10T
Tray
LY6125616ML-10I
Tape Reel
LY6125616ML-10IT
Tray
LY6125616ML-15
LY6125616ML-15LL
Tape Reel
LY6125616ML-15T
LY6125616ML-15LLT
-20℃~80℃
-40℃~85℃
Tray
LY6125616ML-15E
Tape Reel
LY6125616ML-15ET
Tray
LY6125616ML-15I
LY6125616ML-15LLI
Tape Reel
LY6125616ML-15IT
LY6125616ML-15LLIT
20
Tray
0℃~70℃
LY6125616ML-20
LY6125616ML-20LL
Tape Reel
LY6125616ML-20T
LY6125616ML-20LLT
-20℃~80℃
-40℃~85℃
Tray
LY6125616ML-20E
Tape Reel
LY6125616ML-20ET
Tray
LY6125616ML-20I
LY6125616ML-20LLI
Tape Reel
LY6125616ML-20IT
LY6125616ML-20LLIT
25
Tray
0℃~70℃
LY6125616ML-25I
LY6125616ML-25LLI
Tape Reel
LY6125616ML-25IT
LY6125616ML-25LLIT
-20℃~80℃
-40℃~85℃
Tray
LY6125616ML-25E
Tape Reel
LY6125616ML-25ET
Tray
LY6125616ML-25I
LY6125616ML-25LLI
Tape Reel
LY6125616ML-25IT
LY6125616ML-25LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
®
LY6125616
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 2.4
Package Type
48-ball(6mmx8mm)
TFBGA
Access Time
(Speed)(ns)
10
Temperature
Range(℃)
0℃~70℃
-40℃~85℃
15
0℃~70℃
Packing
Type
Lyontek Item No.
Tray
LY6125616GL-10
Tape Reel
LY6125616GL-10T
Tray
LY6125616GL-10I
Tape Reel
LY6125616GL-10IT
Tray
LY6125616GL-15
LY6125616GL-15LL
Tape Reel
LY6125616GL-15T
LY6125616GL-15LLT
-20℃~80℃
-40℃~85℃
Tray
LY6125616GL-15E
Tape Reel
LY6125616GL-15ET
Tray
LY6125616GL-15I
LY6125616GL-15LLI
Tape Reel
LY6125616GL-15IT
LY6125616GL-15LLIT
20
Tray
0℃~70℃
LY6125616GL-20
LY6125616GL-20LL
Tape Reel
LY6125616GL-20T
LY6125616GL-20LLT
-20℃~80℃
-40℃~85℃
Tray
LY6125616GL-20E
Tape Reel
LY6125616GL-20ET
Tray
LY6125616GL-20I
LY6125616GL-20LLI
Tape Reel
LY6125616GL-20IT
LY6125616GL-20LLIT
25
Tray
0℃~70℃
LY6125616GL-25
LY6125616GL-25LL
Tape Reel
LY6125616GL-25T
LY6125616GL-25LLT
-20℃~80℃
-40℃~85℃
Tray
LY6125616GL-25E
Tape Reel
LY6125616GL-25ET
Tray
LY6125616GL-25I
LY6125616GL-25LLI
Tape Reel
LY6125616GL-25IT
LY6125616GL-25LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12
®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
13
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