MOTOROLA MC14000UBCL Dual 3-input nor gate plus inverter Datasheet

SEMICONDUCTOR TECHNICAL DATA
L SUFFIX
CERAMIC
CASE 632
The MC14000UB dual 3–input NOR gate plus inverter is constructed with
MOS P–channel and N–channel enhancement mode devices in a single
monolithic structure. These complementary MOS logic gates find primary
use where low power dissipation and/or high noise immunity is desired.
•
•
•
•
P SUFFIX
PLASTIC
CASE 646
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Logic Swing Independent of Fanout
Pin–for–Pin Replacement for CD4000UB
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D SUFFIX
SOIC
CASE 751A
MAXIMUM RATINGS* (Voltages Referenced to VSS)
Symbol
VDD
Parameter
DC Supply Voltage
Value
Unit
– 0.5 to + 18.0
V
Vin, Vout
Input or Output Voltage (DC or Transient)
– 0.5 to VDD + 0.5
V
lin, lout
Input or Output Current (DC or Transient),
per Pin
± 10
mA
PD
Power Dissipation, per Package†
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
260
_C
TL
Lead Temperature (8–Second Soldering)
* Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C
ORDERING INFORMATION
MC14XXXUBCP
MC14XXXUBCL
MC14XXXUBD
Plastic
Ceramic
SOIC
TA = – 55° to 125°C for all packages.
LOGIC DIAGRAM
3
4
6
5
11
12
13
CIRCUIT SCHEMATIC
VDD
10
14 11 12 13
8
8
9
VDD = PIN 14
VSS = PIN 7
3
4
9
5
VSS
7 6
10
PIN ASSIGNMENT
NC
1
14
VDD
NC
2
13
IN 3B
IN 1A
3
12
IN 2B
IN 2A
4
11
IN 1B
IN 3A
5
10
OUTB
OUTA
6
9
OUTC
VSS
7
8
IN 1C
NC = NO CONNECTION
REV 3
1/94
MC14000UB
Motorola, Inc. 1995
2
MOTOROLA CMOS LOGIC DATA
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ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
Characteristic
Output Voltage
Vin = VDD or 0
Symbol
– 55_C
25_C
+ 125_C
VDD
Vdc
Min
Max
Min
Typ #
Max
Min
Max
Unit
“0” Level
VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
0.05
0.05
0.05
Vdc
“1” Level
VOH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.95
9.95
14.95
—
—
—
Vdc
“0” Level
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
1.0
2.0
2.5
5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4.0
8.0
12.5
—
—
—
5.0
5.0
10
15
– 1.2
– 0.25
– 0.62
– 1.8
—
—
—
—
– 1.0
– 0.2
– 0.5
– 1.5
– 1.7
– 0.36
– 0.9
– 3.5
—
—
—
—
– 0.7
– 0.14
– 0.35
– 1.1
—
—
—
—
IOL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.36
0.9
2.4
—
—
—
mAdc
Input Current
Iin
15
—
± 0.1
—
± 0.00001
± 0.1
—
± 1.0
µAdc
Input Capacitance
(Vin = 0)
Cin
—
—
—
—
5.0
7.5
—
—
pF
Quiescent Current
(Per Package)
IDD
5.0
10
15
—
—
—
0.25
0.5
1.0
—
—
—
0.0005
0.0010
0.0015
0.25
0.5
1.0
—
—
—
7.5
15
30
µAdc
IT
5.0
10
15
Vin = 0 or VDD
Input Voltage
(VO = 4.5 Vdc)
(VO = 9.0 Vdc)
(VO = 13.5 Vdc)
“1” Level
VIH
(VO = 0.5 Vdc)
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
Output Drive Current
(VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
Vdc
Vdc
IOH
Source
(VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
Sink
Total Supply Current**†
(Dynamic plus Quiescent,
Per Gate, CL = 50 pF)
mAdc
IT = (0.3 µA/kHz) f + IDD/N
IT = (0.6 µA/kHz) f + IDD/N
IT = (0.8 µA/kHz) f + IDD/N
µAdc
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
** The formulas given are for the typical characteristics only at 25_C.
†To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µH (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates per
package.
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However,
precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance
circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must
be left open.
MOTOROLA CMOS LOGIC DATA
MC14000UB
3
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS* (CL = 50 pF, TA = 25_C)
Characteristic
Symbol
Output Rise Time
tTLH = (3.0 ns/pF) CL + 30 ns
tTLH = (1.5 ns/pF) CL + 15 ns
tTLH = (1.1 ns/pF) CL + 10 ns
tTLH
Output Fall Time
tTHL = (1.5 ns/pF) CL + 25 ns
tTHL = (0.75 ns/pF) CL + 12.5 ns
tTHL = (0.55 ns/pF) CL + 9.5 ns
tTHL
Propagation Delay Time
tPLH, tPHL = (1.7 ns/pF) CL + 30 ns
tPLH, tPHL = (0.66 ns/pF) CL + 22 ns
tPLH, tPHL = (0.50 ns/pF) CL + 15 ns
tPLH,
tPHL
VDD
Vdc
Min
Typ #
Max
5.0
10
15
—
—
—
180
90
65
360
180
130
5.0
10
15
—
—
—
100
50
40
200
100
80
5.0
10
15
—
—
—
115
55
40
230
110
80
Unit
ns
ns
ns
* The formulas given are for the typical characteristics only at 25_C.
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
VDD
20 ns
14
OUTPUT
7
VSS
VDD
90%
50%
10%
INPUT
INPUT
PULSE
GENERATOR
20 ns
VSS
tPHL
CL
tPLH
VOH
90%
50%
10%
OUTPUT
VOL
tTHL
tTLH
Figure 1. Switching Time Test Circuit and Waveforms
16
16
VDD = 15 Vdc
c
10 Vdc
10
a ONE INPUT ONLY
AND INVERTER
b TWO INPUTS
c THREE INPUTS
b
a
c
8.0
5.0 Vdc
6.0
4.0
c
b
8.0
ID = 15 Vdc
6.0
b
4.0
ID = 10 Vdc
a
2.0
2.0
0
0
0
2.0
4.0
6.0
8.0
10
12
14
Vin, INPUT VOLTAGE (Vdc)
Figure 2. Typical Voltage and Current
Transfer Characteristics
MC14000UB
4
UNUSED INPUTS
CONNECTED TO VSS
14
16
Vout , OUTPUT VOLTAGE (Vdc)
a
12
VDD = 15 Vdc
TA = 25°C
ID , DRAIN CURRENT (mAdc)
Vout , OUTPUT VOLTAGE (Vdc)
14
12
10 Vdc
10
b
a
8.0
6.0
a
a TA = + 125°C
b TA = – 55°C
b
5.0 Vdc
4.0
a
b
2.0
0
0
2.0
4.0
6.0
8.0
10
12
14
16
Vin, INPUT VOLTAGE (Vdc)
Figure 3. Typical Voltage Transfer
Characteristics versus Temperature
MOTOROLA CMOS LOGIC DATA
OUTLINE DIMENSIONS
L SUFFIX
CERAMIC DIP PACKAGE
CASE 632–08
ISSUE Y
–A–
14
9
1
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030)
WHERE THE LEAD ENTERS THE CERAMIC
BODY.
–B–
C
–T–
L
K
SEATING
PLANE
F
G
D
N
M
J
14 PL
0.25 (0.010)
M
T A
S
14 PL
0.25 (0.010)
M
T B
P SUFFIX
PLASTIC DIP PACKAGE
CASE 646–06
ISSUE L
14
8
1
7
B
A
F
L
C
J
N
H
G
D
SEATING
PLANE
MOTOROLA CMOS LOGIC DATA
K
M
S
DIM
A
B
C
D
F
G
J
K
L
M
N
INCHES
MIN
MAX
0.750
0.785
0.245
0.280
0.155
0.200
0.015
0.020
0.055
0.065
0.100 BSC
0.008
0.015
0.125
0.170
0.300 BSC
0_
15_
0.020
0.040
MILLIMETERS
MIN
MAX
19.05
19.94
6.23
7.11
3.94
5.08
0.39
0.50
1.40
1.65
2.54 BSC
0.21
0.38
3.18
4.31
7.62 BSC
0_
15_
0.51
1.01
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
DIM
A
B
C
D
F
G
H
J
K
L
M
N
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.300 BSC
0_
10_
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.62 BSC
0_
10_
0.39
1.01
MC14000UB
5
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A–03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
–A–
14
8
–B–
1
P 7 PL
0.25 (0.010)
7
G
M
F
–T–
M
K
D 14 PL
0.25 (0.010)
M
T B
S
M
R X 45 _
C
SEATING
PLANE
B
A
S
J
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337
0.344
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.228
0.244
0.010
0.019
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How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: [email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
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