AP9973GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Surface Mount Package BVDSS 60V RDS(ON) 80mΩ ID 14A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263(S) The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9973GP) are available for low-profile applications. G Absolute Maximum Ratings Symbol Parameter D TO-220(P) S Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 14 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 9 A 1 IDM Pulsed Drain Current 40 A PD@TC=25℃ Total Power Dissipation 27 W Linear Derating Factor 0.22 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 4.5 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice 200314072-1/4 AP9973GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 60 - - V - 0.05 - V/℃ VGS=10V, ID=9A - - 80 mΩ VGS=4.5V, ID=6A - - 100 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=9A - 8.6 - S VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=9A - 8 13 nC BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC VDS=30V - 7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=9A - 15 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns tf Fall Time RD=3.3Ω - 3 - ns Ciss Input Capacitance VGS=0V - 720 1150 pF Coss Output Capacitance VDS=25V - 77 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=14A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=9A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 27 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 AP9973GS/P 45 32 o T C =25 C ID , Drain Current (A) 35 30 24 25 20 15 10 20 16 12 V G =3.0V 8 V G =3.0V 4 5 0 0 0 1 2 3 4 5 0 6 1 V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 90 2.5 I D =9A ID=9A o T C =25 C V G =10V 2.0 Normalized RDS(ON) 85 RDS(ON) (mΩ) 10V 7.0V 5.0V 4.5V T C =150 o C 28 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 40 80 75 1.5 1.0 0.5 70 0.0 65 3 5 7 9 -50 11 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 14 12 2 IS(A) 8 VGS(th) (V) 10 T j =25 o C o T j =150 C 6 1.5 1 4 2.01E+08 0.5 2 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9973GS/P f=1.0MHz 10000 12 V DS =48V V DS =38V V DS =30V 8 1000 C iss C (pF) VGS , Gate to Source Voltage (V) ID=9A 10 6 4 100 C oss C rss 2 0 10 0 4 8 12 16 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 1ms ID (A) 10 10ms 100ms 1s DC 1 T C =25 o C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4