ATP203 Ordering number : ENA1318 SANYO Semiconductors DATA SHEET ATP203 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Unit 30 PW≤10μs, duty cycle≤1% V 75 A 225 A 50 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 52 mJ 38 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=10V, L=50μH, IAV=38A *2 L≤50μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V Marking : ATP203 Ratings min typ Unit max 30 V 1 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 91708PA TI IM TC-00001570 No. A1318-1/4 ATP203 Continued from preceding page. Parameter Symbol Conditions Ratings min typ 1.2 2.6 V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 2750 Output Capacitance 450 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 265 pF Turn-ON Delay Time td(on) See specified Test Circuit. 24 ns Rise Time tr See specified Test Circuit. 420 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 130 ns Fall Time tf Qg See specified Test Circuit. 75 ns VDS=15V, VGS=10V, ID=75A 44 nC VDS=15V, VGS=10V, ID=75A VDS=15V, VGS=10V, ID=75A IS=75A, VGS=0V 14 nC 5.6 Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, ID=1mA VDS=10V, ID=38A ID=38A, VGS=10V Unit max 13 ID=19A, VGS=4.5V 22 S 6.3 8.2 mΩ 9.5 13.5 mΩ 1.02 nC 1.2 V Package Dimensions unit : mm (typ) 7057-001 1.5 4.6 0.5 7.3 0.55 0.7 0.5 3 0.8 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 2.3 0.1 2.3 1.7 2 1 0.4 0.4 9.5 4 4.6 2.6 6.05 6.5 SANYO : ATPAK Switching Time Test Circuit 10V 0V VDD=15V VIN ID=38A RL=0.39Ω VIN D PW=10μs D.C.≤1% VOUT G ATP203 P.G 50Ω S No. A1318-2/4 ATP203 30 25 VGS=3.5V 20 0.8 1.0 1.2 1.4 1.6 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 1.8 20 38A 15 10 5 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 10 Tc= 7 5 3 2 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 IT14004 =19A V, I D 38A , I D= 10.0V = VGS =4.5 VGS 10 5 --40 --20 0 20 Ciss, Coss, Crss -- pF td(off) 100 tf 7 5 3 tr 2 td(on) 2 3 40 60 80 100 120 5 7 1.0 2 140 160 IT14003 IS -- VSD 100 7 5 3 2 10 7 5 3 2 VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 IT14005 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 5.0 IT14001 5 3 4.5 15 7 VDD=20V VGS=10V 10 0.1 4.0 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 3.5 20 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 1.0 3 0.1 3.0 Case Temperature, Tc -- °C C 5°C --2 75°C 2.5 RDS(on) -- Tc 0 --60 16 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 25° 2.0 Single pulse 3 2 1.5 25 VDS=10V 5 1.0 IT14002 | yfs | -- ID 7 0.5 Gate-to-Source Voltage, VGS -- V 0 0 0 IT14000 Tc=25°C Single pulse ID=19A 0 2.0 --25° C 0.6 5°C 25°C 0.4 Tc= 7 0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns Tc= --25 °C 25°C 10 5 5 30 25 °C 10 7 40 20 15 0 50 C 35 60 5°C 40 --25° 45 70 Tc= 7 50 4.0V Drain Current, ID -- A 55 VDS=10V 90 80 16.0V 10.0V Drain Current, ID -- A 60 Tc=25°C 4.5V 6 .0 65 V 8.0V 70 ID -- VGS 100 75° C ID -- VDS 75 2 1000 7 5 Coss 3 Crss 2 100 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14006 7 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14007 No. A1318-3/4 ATP203 VGS -- Qg 10 7 6 5 Operation in this area is limited by RDS(on). 3 2 1.0 7 5 3 2 1 0 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC PD -- Tc 40 45 30 20 10 0 40 60 80 100 3 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT14010 2 3 5 7 10 3 2 Drain-to-Source Voltage, VDS -- V 5 7 IT14009 EAS -- Ta 120 40 20 2 IT14008 50 0 Tc=25°C Single pulse 0.1 0.1 Avalanche Energy derating factor -- % 60 Allowable Power Dissipation, PD -- W 10 7 5 on 2 3 2 ati 3 s 1 10 0ms 0m s er 4 ID=75A 100 7 5 PW≤10μs 10 1 0μ 0μ s s 1m op Drain Current, ID -- A 8 0 IDP=225A 3 2 DC Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=15V ID=75A 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT14011 Note on usage : Since the ATP203 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1318-4/4