AP2605GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
S
▼ Lower Gate Charge
D
▼ Small Footprint & Low Profile Package
D
BVDSS
-30V
RDS(ON)
80mΩ
ID
- 4A
G
▼ RoHS Compliant
SOT-26
D
D
Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
The SOT-26 package is widely used for commercial-industrial
applications.
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
+20
V
3
-4
A
3
-3.3
A
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
200807082
AP2605GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-4A
-
-
80
mΩ
VGS=-4.5V, ID=-3A
-
-
120
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-4A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= +20V
-
-
+100
nA
ID=-4A
-
5.5
8.8
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.6
-
nC
VDS=-15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
18
-
ns
tf
Fall Time
RD=15Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
400
640
pF
Coss
Output Capacitance
VDS=-25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
30
-
pF
Min.
Typ.
IS=-1.6A, VGS=0V
-
-
-1.2
V
IS=-4A, VGS=0V,
-
21
-
ns
dI/dt=100A/µs
-
14
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2605GY-HF
45
40
- 10 V
-7.0V
T A =25 o C
40
-ID , Drain Current (A)
-ID , Drain Current (A)
35
30
-5.0V
-4.5V
25
T A = 150 o C
35
20
15
- 10 V
-7.0V
30
25
-5.0V
-4.5V
20
15
10
10
V G =-3.0V
V G =-3.0V
5
5
0
0
0
1
2
3
4
5
6
7
8
9
0
-V DS , Drain-to-Source Voltage (V)
3
4
5
6
7
8
Fig 2. Typical Output Characteristics
1.6
105
= -3.0 A
II DD =-4.2A
T
=25ooCC
T AA=25
I D = -4.0A
V G = -10V
1.4
Normalized RDS(ON)
95
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
85
75
65
1.2
1.0
0.8
55
0.6
3
5
7
9
11
-50
-V GS , Gate-to-Source Voltage (V)
3
2
-VGS(th) (V)
2.5
T j =150 o C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2
0
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
-IS(A)
1
T j =25 o C
1
1.5
1
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2605GY-HF
f=1.0MHz
1000
10
C iss
V DS =-24V
I D =-4A
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
4
C rss
2
10
0
0
2
4
6
8
10
1
12
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
1ms
1
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
1
10
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 156℃/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SOT-26
G
L
L
Millimeters
C
A
SYMBOLS
MIN
NOM
MAX
A
2.70
2.90
3.10
B
2.60
2.80
3.00
C
1.40
1.60
1.80
D
0.30
0.43
0.55
E
0.00
0.05
0.10
B
D
H
1.20REF
G
1.90REF
I
0.12REF
J
0.37REF
L
0.95REF
H
E
I
1.All Dimension Are In Millimeters.
J
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SOT-26
Part Number : Y5
Y5YY
Date Code
YY:2004,2008,2012…
YY:2003,2007,2011…
YY:2002,2006,2010…
YY:2001,2005,2009…
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