Vishay CNY17 Optocoupler, phototransistor output, Datasheet

CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
FEATURES
• Isolation test voltage 5300 VRMS
• Long term stability
A
1
6 B
C
2
5 C
• Lead (Pb)-free component
NC
3
4 E
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Industry standard dual-in-line package
i179004
AGENCY APPROVALS
DESCRIPTION
• Underwriters lab file no. E52744 system code H or J
The CNY17 is an optically coupled pair consisting of a
gallium arsenide infrared emitting diode optically coupled to
a silicon NPN phototransitor.
Signal information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical
isolation between input and output.
The CNY17 can be used to replace relays and transformers
in many digital interface applications, as well as analog
applications such as CRT modulation.
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
• BSI IEC 60950 IEC 60065
• FIMKO
ORDER INFORMATION
PART
REMARKS
CNY17-1
CTR 40 to 80 %, DIP-6
CNY17-2
CTR 63 to 125 %, DIP-6
CNY17-3
CTR 100 to 200 %, DIP-6
CNY17-4
CTR 160 to 320 %, DIP-6
CNY17-1X006
CTR 40 to 80 %, DIP-6 400 mil (option 6)
CNY17-1X007
CTR 40 to 80 %, SMD-6 (option 7)
CNY17-1X009
CTR 40 to 80 %, SMD-6 (option 9)
CNY17-2X006
CTR 63 to 125 %, DIP-6 400 mil (option 6)
CNY17-2X007
CTR 63 to 125 %, SMD-6 (option 7)
CNY17-2X009
CTR 63 to 125 %, SMD-6 (option 9)
CNY17-3X006
CTR 100 to 200 %, DIP-6 400 mil (option 6)
CNY17-3X007
CTR 100 to 200 %, SMD-6 (option 7)
CNY17-3X009
CTR 100 to 200 %, SMD-6 (option 9)
CNY17-4X006
CTR 160 to 320 %, DIP-6 400 mil (option 6)
CNY17-4X007
CTR 160 to 320 %, SMD-6 (option 7)
CNY17-4X009
CTR 160 to 320 %, SMD-6 (option 9)
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
6.0
V
Forward current
IF
60
mA
INPUT
Surge current
Power dissipation
Document Number: 83606
Rev. 1.5, 09-Nov-05
t ≤ 10 µs
IFSM
2.5
A
Pdiss
100
mW
For technical questions, contact: [email protected]
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1
CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Emitter base breakdown voltage
BVEBO
7.0
V
mA
IC
50
IC
100
mA
Pdiss
150
mW
VISO
5300
VRMS
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
175
Collector current
t < 1.0 ms
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector referred to climate
DIN 50014, part 2, Nov. 74
t = 1.0 s
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Tsld
260
°C
Isolation resistance
max. 10 s, dip soldering: distance to
seating plane ≥ 1.5 mm
Soldering temperature
Ω
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
1.25
1.65
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
Breakdown voltage
IR = 10 mA
VBR
Reverse current
VR = 6.0 V
IR
Capacitance
VR = 0 V, f = 1.0 MHz
Thermal resistance
6.0
V
V
0.01
10
µA
CO
25
pF
Rth
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
5.2
pF
Collector base capacitance
VCB = 5.0 V, f = 1.0 MHz
CCB
6.5
pF
Emitter base capacitance
VEB = 5.0 V, f = 1.0 MHz
CEB
7.5
pF
Rth
500
K/W
VCEsat
0.25
CC
0.6
CNY17-1
ICEO
2.0
50
nA
CNY17-2
ICEO
2.0
50
nA
CNY17-3
ICEO
5.0
100
nA
CNY17-4
ICEO
5.0
100
nA
Thermal resistance
COUPLER
Collector emitter, saturation voltage
VF = 10 mA, IC = 2.5 mA
Coupling capacitance
Collector emitter, leakage current
VCE = 10 V
0.4
V
pF
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
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For technical questions, contact: [email protected]
Document Number: 83606
Rev. 1.5, 09-Nov-05
CNY17
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
VCE = 5.0 V, IF = 10 mA
IC/IF
VCE = 5.0 V, IF = 1 mA
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
CNY17-1
CTR
40
80
%
CNY17-2
CTR
63
125
%
CNY17-3
CTR
100
200
%
CNY17-4
CTR
160
320
%
CNY17-1
CTR
13
30
%
CNY17-2
CTR
22
45
%
CNY17-3
CTR
34
70
%
CNY17-4
CTR
56
90
%
Note
Current transfer ratio and collector-emitter leakage current by dash number (Tamb °C).
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
LINEAR OPERATION (WITHOUT SATURATION)
Turn-on time
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
ton
3.0
µs
Rise time
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
tr
2.0
µs
Turn-off time
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
toff
2.3
µs
Fall time
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
tf
2.0
µs
Cut-off frequency
IF = 10 mA, VCC = 5.0 V, RL = 75 Ω
fCO
250
kHz
ton
3.0
µs
SWITCHING OPERATION (WITH SATURATION)
IF = 20 mA
Turn-on time
Rise time
Turn-off time
Fall time
CNY17-2
ton
4.2
µs
CNY17-3
ton
4.2
µs
IF = 5 mA
CNY17-4
ton
6.0
µs
IF = 20 mA
CNY17-1
tr
2.0
µs
CNY17-2
tr
3.0
µs
CNY17-3
tr
3.0
µs
IF = 5 mA
CNY17-4
tr
4.6
µs
IF = 20 mA
CNY17-1
toff
18
µs
IF = 10 mA
IF = 10 mA
CNY17-2
toff
23
µs
CNY17-3
toff
23
µs
IF = 5 mA
CNY17-4
toff
25
µs
IF = 20 mA
CNY17-1
tf
11
µs
CNY17-2
tf
14
µs
CNY17-3
tf
14
µs
CNY17-4
tf
15
µs
IF = 10 mA
IF = 10 mA
IF = 5 mA
Document Number: 83606
Rev. 1.5, 09-Nov-05
CNY17-1
For technical questions, contact: [email protected]
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3
CNY17
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
(TA = 0 °C, VCE = 5 V)
IC/IF = f (IF)
V CC = 5 V
IC
IC
(%)
IF
R L = 75 Ω
IF
100
1
2
3
4
10
47 Ω
1
0.1
icny17_01
1
Fig. 1 - Linear Operation (without Saturation)
10
IF (mA)
icny17_04
Fig. 4 - Current Transfer Ratio vs. Diode Current
1000
IF
(TA = 25 °C, VCE = 5 V)
IC/IF = f (IF)
1 kΩ
IC
(%)
IF
V CC = 5 V
100
1
2
3
4
10
47 Ω
1
icny17_02
0.1
icny17_05
Fig. 2 - Switching Operation (with Saturation)
1000
(TA = 50 °C, VCE = 5 V)
IC/IF = f (IF)
(TA = - 25 °C, VCE = 5 V)
IC/IF = f (IF)
100
IC
(%)
IF
IC
(%)
IF
10
Fig. 5 - Current Transfer Ratio vs. Diode Current
1000
1
2
3
4
10
100
1
2
3
4
10
1
1
0.1
icny17_03
1
10
IF (mA)
Fig. 3 - Current Transfer Ratio vs. Diode Current
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1
IF (mA)
0.1
icny17_06
1
10
IF (mA)
Fig. 6 - Current Transfer Ratio vs. Diode Current
For technical questions, contact: [email protected]
Document Number: 83606
Rev. 1.5, 09-Nov-05
CNY17
Optocoupler, Phototransistor Output,
with Base Connection
40
1000
(TA = 75 °C, VCE = 5 V)
IC/IF = f (IF)
IC = f (VCE)
30
IF = 14 mA
100
IC
IC
(%)
IF
Vishay Semiconductors
1
2
3
4
10
IF = 12 mA
20
IF =10 mA
IF = 7 mA
10
IF = 5 mA
IF = 1 mA
1
0
0.1
1
0
10
5
10
15
VCE (V)
icny17_10
IF (mA)
icny17_07
Fig. 10 - Output Characteristics
Fig. 7 - Current Transfer Ratio vs. Diode Current
1000
1.2
VF = f (IF)
(IF = 10 mA, VCE = 5 V)
IC/IF = f (T)
25 °C
50 °C
75 °C
4
1.1
3
2
100
VF (V)
IC
(%)
IF
IF = 2 mA
1
1.0
10
- 25
0.9
0
25
50
75
TA (°C)
icny17_08
0.1
10
100
IF (mA)
icny17_11
Fig. 11 - Forward Voltage
Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature
30
1
IC = f (VCE)
IF = 0
VCE = 35 V
IB = 40 µA
20
15
IB = 20 µA
10
IB = 15 µA
ICEO (µA)
25
IC (mA)
1
ICEO = f (V,T)
(IF = 0)
0.1
VCE = 12 V
0.01
IB = 10 µA
5
0
IB =
5 µA
IB =
2 µA
0.001
0
icny17_09
5
10
VCE (V)
Fig. 9 - Transistor Characteristics
Document Number: 83606
Rev. 1.5, 09-Nov-05
15
0
25
50
75 °C
TA
100
icny17_12
Fig. 12 - Collector Emitter Off-state Current
For technical questions, contact: [email protected]
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CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
1.0
1.0
VCEsat = f (IC)
0.9
0.9
0.7
0.7
VCE sat (V)
IF = 3 x IC
VCE sat
0.6
0.5
0.4
0.6
0.4
0.3
0.2
0.2
0.1
0.1
0
1
10
IF = 2 x IC
IF = 3 x IC
1
100
IC (mA)
icny17_13
IF = IC
0.5
0.3
0
10
100
IC (mA)
icny17_16
Fig. 13 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-1
Fig. 16 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-4
1.0
200
Ptot = f (TA)
0.9
VCEsat = f (IC)
0.8
150
Ptot (mW)
0.7
VCE sat (V)
VCEsat = f (IC)
0.8
0.8
0.6
0.5
IF = 2 x IC
0.4
0.3
100
Diode
IF = 3 x IC
0.2
Transistor
50
0.1
0
0
1
10
100
IC (mA)
icny17_14
0
25
icny17_18
Fig. 14 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-2
50
75
100
TA (°C)
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
1.0
0.9
VCEsat = f (IC)
0.8
VCE sat (V)
0.7
IF = IC
0.6
0.5
0.4
0.3
IF = 2 x IC
0.2
0.1
IF = 3 x IC
0
1
icny17_15
10
100
IC (mA)
Fig. 15 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-3
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For technical questions, contact: [email protected]
Document Number: 83606
Rev. 1.5, 09-Nov-05
CNY17
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
Pin one ID
0.248 (6.30)
0.256 (6.50)
ISO Method A
0.335 (8.50)
0.343 (8.70)
0.039
(1.00)
min.
0.300 (7.62)
typ.
0.048 (0.45)
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
18°
4°
typ.
0.031 (0.80) min.
0.031 (0.80) 3°to 9°
0.035 (0.90)
0.018 (0.45)
0.022 (0.55)
0.100 (2.54) typ.
0.010 (0.25)
typ.
0.114 (2.90)
0.130 (3.0)
0.300 to 0.347
(7.62 to 8.81)
i178004
Option 6
Option 7
Option 9
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.300 (7.62)
typ.
0.375 (9.53)
0.395 (10.03)
0.300 (7.62)
ref.
0.028 (0.7)
min.
0.180 (4.6)
0.160 (4.1) 0.0040 (0.102)
0.315 (8.0)
min.
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
Document Number: 83606
Rev. 1.5, 09-Nov-05
0.331 (8.4)
min.
0.406 (10.3)
max.
0.012 (0.30 ) typ.
0.0098 (0.249)
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
min.
For technical questions, contact: [email protected]
15° max.
18450
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CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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For technical questions, contact: [email protected]
Document Number: 83606
Rev. 1.5, 09-Nov-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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