Intersil EL5420TILZ 12mhz rail-to-rail input-output operational amplifier Datasheet

EL5420T
Data Sheet
September 8, 2015
12MHz Rail-to-Rail Input-Output
Operational Amplifier
Features
• 12MHz (-3dB) Bandwidth
The EL5420T is a low power, high voltage rail-to-rail
input-output amplifier. The EL5420T contains four amplifiers.
Each amplifier exhibits beyond the rail input capability,
rail-to-rail output capability and is unity gain stable.
• 4.5V to 19V Maximum Supply Voltage Range
• 12V/µs Slew Rate
• 500µA Supply Current (per Amplifier)
The maximum operating voltage range is from 4.5V to 19V. It
can be configured for single or dual supply operation, and
typically consumes only 500µA per amplifier. The EL5420T
has an output short circuit capability of ±200mA and a
continuous output current capability of ±70mA.
• ±70mA Continuous Output Current
The EL5420T features a slew rate of 12V/µs. Also, the
device provides common mode input capability beyond the
supply rails, rail-to-rail output capability, and a bandwidth of
12MHz (-3dB). This enables the amplifiers to offer maximum
dynamic range at any supply voltage. These features make
the EL5420T an ideal amplifier solution for use in TFT-LCD
panels as a VCOM or static gamma buffer, and in high speed
filtering and signal conditioning applications. Other
applications include battery power and portable devices,
especially where low power consumption is important.
• Rail-to-rail Output Swing
The EL5420T is available in a 14 Ld TSSOP package,
14 Ld SOIC package, and a space saving thermally
enhanced 16 Ld QFN package. All feature a standard
operational amplifier pin out. The devices operate over an
ambient temperature range of -40°C to +85°C.
• Static Gamma Buffers
Ordering Information
• Personal Communication Devices
PART NUMBER
(Note)
PART
MARKING
PACKAGE
(Pb-Free)
16 Ld QFN
FN6838.1
PKG.
DWG. #
EL5420TILZ* (No longer
available or supported)
5420TIL Z
MDP0046
EL5420TIRZ*
5420TIR Z 14 Ld TSSOP MDP0044
EL5420TISZ*(No longer
available or supported)
5420TIS Z 14 Ld SOIC
• ±200mA Output Short Circuit Current
• Unity-gain Stable
• Beyond the Rails Input Capability
• Built-in Thermal Protection
• -40°C to +85°C Ambient Temperature Range
• Pb-free (RoHS compliant)
Applications
• TFT-LCD Panels
• VCOM Amplifiers
• Electronics Notebooks
• Electronics Games
• Touch-screen Displays
• Personal Digital Assistants (PDA)
• Portable Instrumentation
• Sampling ADC Amplifiers
MDP0027
*Add “-T7” or “-T13” suffix for tape and reel.Please refer to TB347
for details on reel specifications
NOTE: These Intersil Pb-free plastic packaged products employ
special Pb-free material sets, molding compounds/die attach
materials, and 100% matte tin plate plus anneal (e3 termination
finish, which is RoHS compliant and compatible with both SnPb and
Pb-free soldering operations). Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed
the Pb-free requirements of IPC/JEDEC J STD-020.
1
• Wireless LANs
• Office Automation
• Active Filters
• ADC/DAC Buffer
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2009, 2015. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
EL5420T
Pinouts
EL5420T
(14 LD TSSOP)
TOP VIEW
VOUTA 1
13 NC
14 VOUTD
15 VOUTA
16 NC
EL5420T
(16 LD QFN)
TOP VIEW
VINA- 1
VINA+ 2
THERMAL R S
PAD E O
VINC- 8
VINB- 5
NO
R
GE
N
LO
12 VINDRT
VINA+ 3
11 VIND+
VS+ 4
PO
UP
BL
VOUTC 7
VINB+ 4
LA
AI
AV
VOUTB 6
VS+ 3
VINA- 2
ED
10 VS-
VINB+ 5
9 VINC+
VINB- 6
VOUTB 7
14 VOUTD
- +
+ -
13 VIND12 VIND+
11 VS10 VINC+
- +
+ -
9 VINC8 VOUTC
THERMAL PAD
CONNECTS TO VS-
2
FN6838.1
September 8, 2015
EL5420T
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . +19.8V
Input Voltage Range (VINx+, VINx-) . . . . . . . . . VS- -0.5V, VS+ +0.5V
Input Differential Voltage (VINx+ - VINx-) . . .(VS+ +0.5V)-(VS- -0.5V)
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . ±70mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3000V
Thermal Resistance Junction-to-Ambient (Typical)
JA (°C/W)
16 Ld QFN (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .
14 Ld SOIC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .
14 Ld TSSOP (Note 2) . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance Junction-to-Case (Typical)
47
88
100
JC (°C/W)
16 Ld QFN (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . .
9
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Power Dissipation Curves . . . . . . . . . . . . . . .See Figures 30 and 31
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, RL = 10k to 0V, TA = +25°C, unless otherwise specified.
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
13
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
3
TCVOS
Average Offset Voltage Drift (Note 4)
14 LD TSSOP, SOIC package
7
µV/°C
16 LD QFN package
2
µV/°C
VCM = 0V
2
IB
Input Bias Current
RIN
Input Impedance
1
G
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
For VINx from -5.5V to +5.5V
50
75
dB
AVOL
Open Loop Gain
-4.5V VOUTx 4.5V
75
105
dB
-5.5
50
+5.5
nA
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = +5mA
ISC
Short Circuit Current
VCM = 0V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
IOUT
Output Current
-4.94
4.85
-4.85
V
4.94
V
±200
mA
±70
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-)
Supply Voltage Range
IS
Supply Current (Per Amplifier)
VCM = 0V, No load
PSRR
Power Supply Rejection Ratio
Supply is moved from ±2.25V to ±9.5V
4.5
500
60
19
V
750
µA
75
dB
12
V/µs
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 5)
3
-4.0V VOUTx 4.0V, 20% to 80%
FN6838.1
September 8, 2015
EL5420T
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, RL = 10k to 0V, TA = +25°C, unless otherwise specified. (Continued)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
tS
Settling to +0.1% (Note 6)
AV = +1, VOUTx = 2V step,
RL= 10k, CL= 8pF
500
ns
BW
-3dB Bandwidth
RL= 10k, CL= 8pF
12
MHz
GBWP
Gain-Bandwidth Product
AV = -50, RF = 5kRG= 100
RL= 10k, CL= 8pF
8
MHz
PM
Phase Margin
AV = -50, RF = 5kRG= 100
RL= 10k, CL= 8pF
50
°
CS
Channel Separation
f = 5MHz
75
dB
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = 0V, RL = 10k to 2.5V, TA = +25°C, unless otherwise specified.
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
13
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 2.5V
3
TCVOS
Average Offset Voltage Drift (Note 4)
14 LD TSSOP, SOIC package
7
µV/°C
16 LD QFN package
2
µV/°C
VCM = 2.5V
2
IB
Input Bias Current
RIN
Input Impedance
1
G
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
For VINx from -0.5V to +5.5V
45
70
dB
AVOL
Open Loop Gain
0.5V VOUTx 4.5V
75
105
dB
-0.5
50
+5.5
nA
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -2.5mA
VOH
Output Swing High
IL = +2.5mA
ISC
Short Circuit Current
VCM = 2.5V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
IOUT
Output Current
30
4.85
150
mV
4.97
V
±125
mA
±70
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-)
Supply Voltage Range
IS
Supply Current (Per Amplifier)
VCM = 2.5V, No load
PSRR
Power Supply Rejection Ratio
Supply is moved from 4.5V to 19V
4.5
500
60
19
V
750
µA
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 5)
1V VOUTx 4V, 20% to 80%
12
V/µs
tS
Settling to +0.1% (Note 6)
AV = +1, VOUTx = 2V step,
RL= 10k, CL= 8pF
500
ns
BW
-3dB Bandwidth
RL= 10k, CL= 8pF
12
MHz
GBWP
Gain-Bandwidth Product
AV = -50, RF = 5kRG= 100
RL= 10k, CL= 8pF
8
MHz
PM
Phase Margin
AV = -50, RF = 5kRG= 100
RL= 10k, CL= 8pF
50
°
CS
Channel Separation
f = 5MHz
75
dB
4
FN6838.1
September 8, 2015
EL5420T
Electrical Specifications
PARAMETER
VS+ = +18V, VS- = 0V, RL = 10k to 9V, TA = +25°C, unless otherwise specified.
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
15
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 9V
4
TCVOS
Average Offset Voltage Drift (Note 4)
14 LD TSSOP, SOIC package
7
µV/°C
16 LD QFN package
2
µV/°C
VCM = 9V
2
IB
Input Bias Current
RIN
Input Impedance
1
G
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
For VINx from -0.5V to +18.5V
53
78
dB
AVOL
Open Loop Gain
0.5V VOUTx 17.5V
75
90
dB
-0.5
50
+18.5
nA
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -9mA
VOH
Output Swing High
IL = +9mA
ISC
Short Circuit Current
VCM = 9V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
IOUT
Output Current
100
17.85
150
mV
17.90
V
±200
mA
±70
mA
POWER SUPPLY PERFORMANCE
(VS+) - (VS-)
Supply Voltage Range
IS
Supply Current (Per Amplifier)
VCM = 9V, No load
PSRR
Power Supply Rejection Ratio
Supply is moved from 4.5V to 19V
4.5
550
60
19
V
750
µA
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 5)
1V VOUTx 17V, 20% to 80%
12
V/µs
tS
Settling to +0.1% (Note 6)
AV = +1, VOUTx = 2V step,
RL= 10k, CL= 8pF
500
ns
BW
-3dB Bandwidth
RL= 10k, CL= 8pF
12
MHz
GBWP
Gain-Bandwidth Product
AV = -50, RF = 5kRG= 100
RL= 10k, CL= 8pF
8
MHz
PM
Phase Margin
AV = -50, RF = 5kRG= 100
RL= 10k, CL= 8pF
50
°
CS
Channel Separation
f = 5MHz
75
dB
NOTES:
4. Measured over -40°C to +85°C ambient operating temperature range. See the typical TCVOS production distribution shown in the
“Typical Performance Curves” on page 6
5. Typical slew rate is an average of the slew rates measured on the rising (20%-80%) and the falling (80%-20%) edges of the output signal.
6. Settling time measured as the time from when the output level crosses the final value on rising/falling edge to when the output level settles within
a ±0.1% error band. The range of the error band is determined by: Final Value(V)±[Full Scale(V)*0.1%]
5
FN6838.1
September 8, 2015
EL5420T
Typical Performance Curves
VS = ±5V
TA = +25°C
35
TYPICAL
PRODUCTION
DISTRIBUTION
2400
QUANTITY (AMPLIFIERS)
2800
2000
1600
1200
800
400
0
FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION
QUANTITY (AMPLIFIERS)
30
VS = ±5V
-40°C to +85°C
25
TYPICAL
PRODUCTION
DISTRIBUTION
20
15
10
5
0
0
20
15
10
5
2
4 6 8 10 12 14 16 18 20 22 24 26 28
INPUT OFFSET VOLTAGE DRIFT (|µV|/°C)
VS = ±5V
5.0
2.5
0.0
-2.5
-50
0
50
100
TEMPERATURE (°C)
150
FIGURE 4. INPUT OFFSET VOLTAGE vs TEMPERATURE
4.95
VS = ±5V
OUTPUT HIGH VOLTAGE (V)
INPUT BIAS CURRENT (nA)
25
7.5
2
1
0
-1
-2
-50
TYPICAL
PRODUCTION
DISTRIBUTION
FIGURE 2. INPUT OFFSET VOLTAGE DRIFT (TSSOP, SOIC)
1 2 3 4 5 6 7 8 9 10 11 12
INPUT OFFSET VOLTAGE DRIFT (|µV|/°C)
FIGURE 3. INPUT OFFSET VOLTAGE DRIFT (QFN)
VS = ±5V
-40°C TO +85°C
30
0
-8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
INPUT OFFSET VOLTAGE (mV)
INPUT OFFSET VOLTAGE (mV)
QUANTITY (AMPLIFIERS)
3200
0
50
100
TEMPERATURE (°C)
150
FIGURE 5. INPUT BIAS CURRENT vs TEMPERATURE
6
VS = ±5V
IOUT = 5mA
4.93
4.91
4.89
-50
0
50
100
TEMPERATURE (°C)
150
FIGURE 6. OUTPUT HIGH VOLTAGE vs TEMPERATURE
FN6838.1
September 8, 2015
EL5420T
Typical Performance Curves
(Continued)
140
-4.92
VS = ±5V
IOUT = -5mA
OPEN LOOP GAIN (dB)
OUTPUT LOW VOLTAGE (V)
-4.91
-4.93
-4.94
-4.95
-4.96
-50
0
50
100
TEMPERATURE (°C)
80
60
40
-50
SUPPLY CURRENT (µA)
13.0
12.5
0
50
100
TEMPERATURE (°C)
150
FIGURE 9. SLEW RATE vs TEMPERATURE
150
VS = ±5V
NO LOAD
INPUTS AT GND
525
500
475
450
-50
0
50
100
TEMPERATURE (°C)
150
FIGURE 10. SUPPLY CURRENT PER AMPLIFIER vs
TEMPERATURE
650
16
TA = +25°C
AV = 1
RL = 10k
CL = 8pF
TA = +25°C
SLEW RATE (V/µs)
SUPPLY CURRENT (µA)
50
100
TEMPERATURE (°C)
550
V S = ±5V
R L = 10k 
600
0
FIGURE 8. OPEN-LOOP GAIN vs TEMPERATURE
13.5
SLEW RATE (V/µs)
100
150
FIGURE 7. OUTPUT LOW VOLTAGE vs TEMPERATURE
12.0
-50
VS = ±5V
RL = 10k
120
550
500
450
14
12
10
400
350
2
4
6
8
SUPPLY VOLTAGE (±V)
10
FIGURE 11. SUPPLY CURRENT PER AMPLIFIER vs SUPPLY
VOLTAGE
7
8
2
6
8
4
SUPPLY VOLTAGE (±V)
10
FIGURE 12. SLEW RATE vs SUPPLY VOLTAGE
FN6838.1
September 8, 2015
EL5420T
Typical Performance Curves
(Continued)
250
5
10k
200
80
GAIN
60
150
40
100
20
PHASE
VS = ±5V
TA = +25°C
RL = 10k
CL = 8pF
0
-20
10
100
50
GAIN (dB)
0
PHASE (°)
OPEN LOOP GAIN (dB)
100
1k
560
-5
150
VS = ±5V
AV = 1
CL = 8pF
-10
0
1k
10k
100k 1M
10M
-50
100M
-15
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 13. OPEN LOOP GAIN AND PHASE vs FREQUENCY
FIGURE 14. FREQUENCY RESPONSE FOR VARIOUS RL
20
200
GAIN (dB)
10
0
50pF
8pF
-10
1000pF
-20 VS = ±5V
AV = 1
RL = 10k
-30
100k
1M
10M
FREQUENCY (Hz)
40
1k
10k
100k
1M
FREQUENCY (Hz)
10M
VS = ±5V
TA = +25°C
VINx = -10dBm
-10
-20
CMRR (dB)
8
0
80
0
10
2
120
FIGURE 16. CLOSED LOOP OUTPUT IMPEDANCE vs
FREQUENCY
12
4
VS = ±5V
AV = 1
RL = OPEN
VOUTx = +13dBm
160
0
100M
FIGURE 15. FREQUENCY RESPONSE FOR VARIOUS CL
MAXIMUM OUTPUT SWING (VP-P)
OUTPUT IMPEDANCE ()
100pF
6
100M
VS = ±5V
TA = +25°C
AV = 1
RL = 10k
CL = 8pF
10k
-30
-40
-50
-60
100k
1M
FREQUENCY (Hz)
10M
FIGURE 17. MAXIMUM OUTPUT SWING vs FREQUENCY
8
-70
10
100
1k
10k
100k
FREQUENCY (Hz)
1M
10M
FIGURE 18. CMRR vs FREQUENCY
FN6838.1
September 8, 2015
EL5420T
Typical Performance Curves
(Continued)
0
1000
PSRR (dB)
-20
-30
-40
-50
PSRR+
-60
-70
TA = +25°C
VOLTAGE NOISE (nV/Hz)
VS = ±5V
TA = +25°C
-10
100
10
PSRR-
-80
1k
10k
100k
1M
FREQUENCY (Hz)
1
100
10M
-60
0.035
1M
10M
100M
0.030
0.025
0.020
MEASURED CH A TO D, OR B TO C
OTHER COMBINATIONS YIELD
IMPROVED REJECTION
-70
XTALK(dB)
VS = ±5V
RL = 10k
AV = 1
VIN = 1.4VRMS
0.040
100k
FIGURE 20. INPUT VOLTAGE NOISE SPECTRAL DENSITY vs
FREQUENCY
0.050
0.045
10k
FREQUENCY (Hz)
FIGURE 19. PSRR vs FREQUENCY
THD+N (%)
1k
VS = ±5V
AV = 1
VINx = 0dBm
-80
-90
0.015
0.010
0.005
100
1k
10k
FREQUENCY (Hz)
100k
FIGURE 21. TOTAL HARMONIC DISTORTION + NOISE vs
FREQUENCY
-100
10k
5
4
3
STEP SIZE (V)
OVERSHOOT (%)
80
40
VS = ±5V
TA = +25°C
AV = 1
RL = 10k
VINx = ±50mV
20
0
10
100
LOAD CAPACITANCE (pF)
FIGURE 23. SMALL SIGNAL OVERSHOOT vs LOAD
CAPACITANCE
9
10M
FIGURE 22. CHANNEL SEPARATION vs FREQUENCY
RESPONSE
100
60
100k
1M
FREQUENCY (Hz)
2
VS = ±5V
TA = +25°C
AV = 1
RL = 10k
CL = 8pF
0.1%
1
0
-1
-2
0.1%
-3
-4
1000
-5
100
200
300
400
500
SETTLING TIME (ns)
600
700
FIGURE 24. STEP SIZE vs SETTLING TIME
FN6838.1
September 8, 2015
EL5420T
Typical Performance Curves
(Continued)
VS = ±5V
TA = +25°C
AV = 1
RL= 10k
CL =8pF
50mV/DIV
1V/DIV
VS = ±5V
TA = +25°C
AV = 1
RL= 10k
CL =8pF
200ns/DIV
100mV STEP
6V STEP
1µs/DIV
FIGURE 25. LARGE SIGNAL TRANSIENT RESPONSE
FIGURE 26. SMALL SIGNAL TRANSIENT RESPONSE
EL5420T
(14LD TSSOP)
1
VOUTA
RLA
CLA
VOUTA
VOUTD
14
0
VOUTD
RLD
0
VINA+
2
VINA-
VIND-
13
3
VINA+
VIND+
12
C LD
VIND+
49.9
49.9
4
V S+
+
4.7µF
Vs+
Vs-
11
0.1µF
5
VINB+
49.9
6
VINC+
VINB+
VINC-
VINB-
VINC+
9
49.9
0
7
VOUTB
VOUTC
8
VOUTC
RLC
RLB
CLB
4.7µF
10
0
VOUTB
VS+
0.1µF
C LC
FIGURE 27. BASIC TEST CIRCUIT
Pin Descriptions
EL5420T
14 LD TSSOP,
14 LD SOIC
16 LD QFN
PIN NAME
1
15
VOUTA
2
1
3
FUNCTION
EQUIVALENT CIRCUIT
Amplifier A Output
(Reference Circuit 1)
VINA-
Amplifier A Inverting Input
(Reference Circuit 2)
2
VINA+
Amplifier A Non-Inverting Input
(Reference Circuit 2)
4
3
VS+
5
4
VINB+
Amplifier B Non-Inverting Input
(Reference Circuit 2)
6
5
VINB-
Amplifier B Inverting Input
(Reference Circuit 2)
7
6
VOUTB
Amplifier B Output
(Reference Circuit 1)
8
7
VOUTC
Amplifier C Output
(Reference Circuit 1)
9
8
VINC-
Amplifier C Inverting Input
(Reference Circuit 2)
10
Positive Power Supply
FN6838.1
September 8, 2015
EL5420T
Pin Descriptions (Continued)
EL5420T
14 LD TSSOP,
14 LD SOIC
16 LD QFN
PIN NAME
10
9
VINC+
11
10
VS-
12
11
VIND+
Amplifier D Non-Inverting Input
(Reference Circuit 2)
13
12
VIND-
Amplifier D Inverting Input
(Reference Circuit 2)
14
14
VOUTD
Amplifier D Output
(Reference Circuit 1)
13, 16
NC
pad
Thermal Pad
FUNCTION
EQUIVALENT CIRCUIT
Amplifier C Non-Inverting Input
(Reference Circuit 2)
Negative Power Supply
No Connect
Functions as a heat sink.
Connects to most negative potential, VS-
VS+
VS+
VOUTx
VINx
GND
CIRCUIT 1
11
VSVS-
CIRCUIT 2
FN6838.1
September 8, 2015
EL5420T
Applications Information
VS = ±2.5V, TA = +25°C, AV = 1, VINx = 6VP-P, RL = 10kto GND
The EL5420T is a high voltage rail-to-rail input-output
amplifier with low power consumption. The EL5420T
contains four amplifiers. Each amplifier exhibits beyond the
rail input capability, rail-to-rail output capability, and is unity
gain stable.
The EL5420T features a slew rate of 12V/µs. Also, the
device provides common mode input capability beyond the
supply rails, rail-to-rail output capability, and a bandwidth of
12MHz (-3dB). This enables the amplifiers to offer maximum
dynamic range at any supply voltage.
1V/DIV
Product Description
OUTPUT
100µs/DIV
INPUT
FIGURE 28. OPERATION WITH BEYOND-THE-RAILS INPUT
Operating Voltage, Input and Output Capability
The EL5420T can operate on a single supply or dual supply
configuration. The EL5420T operating voltage ranges from a
minimum of 4.5V to a maximum of 19V. This range allows for
a standard 5V (or ±2.5V) supply voltage to dip to -10%, or a
standard 18V (or ±9V) to rise by +5.5% without affecting
performance or reliability.
The EL5420T output typically swings to within 50mV of
positive and negative supply rails with load currents of
±5mA. Decreasing load currents will extend the output
voltage range even closer to the supply rails. Figure 29
shows the input and output waveforms for the device in a
unity-gain configuration. Operation is from ±5V supply with a
10k load connected to GND. The input is a 10VP-P
sinusoid and the output voltage is approximately 9.9VP-P.
Refer to the “Electrical Specifications” Table beginning on
page 3 for specific device parameters. Parameter variations
with operating voltage, loading and/or temperature are
shown in the “Typical Performance Curves” on page 6.
INPUT
OUTPUT
5V/DIV
The input common-mode voltage range of the EL5420T
extends 500mV beyond the supply rails. Also, the EL5420T
is immune to phase reversal. However, if the common mode
input voltage exceeds the supply voltage by more than 0.5V,
electrostatic protection diodes in the input stage of the
device begin to conduct. Even though phase reversal will not
occur, to maintain optimal reliability it is suggested to avoid
input overvoltage conditions. Figure 28 shows the input
voltage driven 500mV beyond the supply rails and the device
output swinging between the supply rails.
VS = ±5V, TA = +25°C, AV = 1, VINx = 10VP-P, RL = 10kto GND
100µs/DIV
FIGURE 29. OPERATION WITH RAIL-TO-RAIL INPUT AND
Output Current
The EL5420T is capable of output short circuit currents of
200mA (source and sink), and the device has built-in
protection circuitry which limits the short circuit current to
±200mA (typical).
To maintain maximum reliability the continuous output
current should never exceed ±70mA. This ±70mA limit is
determined by the characteristics of the internal metal
interconnects. Also, see “Power Dissipation” on page 13 for
detailed information on ensuring proper device operation
and reliability for temperature and load conditions.
Unused Amplifiers
It is recommended that any unused amplifiers be configured
as a unity gain follower. The inverting input should be directly
connected to the output and the non-inverting input tied to
the ground.
Thermal Shutdown
The EL5420T has a built-in thermal protection which
ensures safe operation and prevents internal damage to the
device due to overheating. When the die temperature
reaches +165°C (typical) the device automatically shuts OFF
the outputs by putting them in a high impedance state. When
the die cools by 15°C (typical) the device automatically turns
12
FN6838.1
September 8, 2015
EL5420T
ON the outputs by putting them in a low impedance (normal)
operating state.
Driving Capacitive Loads
As load capacitance increases, the -3dB bandwidth will
decrease and peaking can occur. Depending on the
application, it may be necessary to reduce peaking and to
improve device stability. To improve device stability a
snubber circuit or a series resistor may be added to the
output of the EL5420T.
A snubber is a shunt load consisting of a resistor in series
with a capacitor. An optimized snubber can improve the
phase margin and the stability of the EL5420T. The
advantage of a snubber circuit is that it does not draw any
DC load current or reduce the gain.
Another method to reduce peaking is to add a series output
resistor (typically between 1 to 10). Depending on the
capacitive loading, a small value resistor may be the most
appropriate choice to minimize any reduction in gain.
where:
• i = 1 to 4
(1, 2, 3, 4 corresponds to Channel A, B, C, D respectively)
• VS = Total supply voltage (VS+ - VS-)
• VS+ = Positive supply voltage
• VS- = Negative supply voltage
• ISMAX = Maximum supply current per amplifier
(ISMAX = EL5420T quiescent current ÷ 4)
• VOUT = Output voltage
• ILOAD = Load current
Device overheating can be avoided by calculating the
minimum resistive load condition, RLOAD, resulting in the
highest power dissipation. To find RLOAD set the two PDMAX
equations equal to each other and solve for VOUT/ILOAD.
Reference the package power dissipation curves, Figures 30
and 31, for further information.
Power Dissipation
The maximum power dissipation allowed in a package is
determined according to Equation 1:
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1.2
SOIC14
JA = 120°C/W
1.04W
1.0
Power Dissipation (W)
With the high-output drive capability of the EL5420T
amplifiers, it is possible to exceed the +150°C absolute
maximum junction temperature under certain load current
conditions. It is important to calculate the maximum power
dissipation of the EL5420T in the application. Proper load
conditions will ensure that the EL5420T junction temperature
stays within a safe operating region.
0.8
962mW
833mW
QFN16
JA = 130°C/W
0.6
0.4
TSSOP14
JA = 150°C/W
0.2
T JMAX – T AMAX
P DMAX = -------------------------------------------- JA
(EQ. 1)
0.0
0
25
50
where:
75
85 100
125
150
Am bie nt Te m pe ra ture (°C)
• TJMAX = Maximum junction temperature
FIGURE 30. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
• TAMAX = Maximum ambient temperature
• JA = Thermal resistance of the package
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
• PDMAX = Maximum power dissipation allowed
P DMAX = i  V S  I SMAX +  V S + – V OUT i   I LOAD i 
(EQ. 2)
when sourcing, and:
3.0
2.66W
QFN16
JA = 47°C/W
2.5
Power Dissipation (W)
The total power dissipation produced by an IC is the total
quiescent supply current times the total power supply
voltage, plus the power dissipation in the IC due to the loads,
or:
2.0
1.5
SOIC14
JA = 88°C/W
1.42W
TSSOP14
JA = 100°C/W
1.25W
1.0
0.5
P DMAX = i  V S  I SMAX +  V OUT i – V S -   I LOAD i 
(EQ. 3)
0.0
0
25
50
75
85 100
125
150
Am b ie n t T e m p e ra tu re (°C)
when sinking,
FIGURE 31. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
13
FN6838.1
September 8, 2015
EL5420T
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5420T can provide gain at high frequency, so good
printed circuit board layout is necessary for optimum
performance. Ground plane construction is highly
recommended, trace lengths should be as short as possible
and the power supply pins must be well bypassed to reduce
any risk of oscillation.
For normal single supply operation (the VS- pin is connected
to ground) a 4.7µF capacitor should be placed from VS+ to
ground, then a parallel 0.1µF capacitor should be connected
as close to the amplifier as possible. One 4.7µF capacitor
may be used for multiple devices. For dual supply operation
the same capacitor combination should be placed at each
supply pin to ground.
For the QFN package, with exposed thermal pad, the pad
should be connected to the lowest potential, VS-, to optimize
thermal and operating performance. PCB vias should be
placed below the device’s exposed thermal pad to transfer
heat to the VS- plane and away from the device.
Revision History
DATE
REVISION
CHANGE
September 8, 2015
FN6838.1
Updated Ordering Information Table on page 1.
Added About Intersil section.
September 25, 2009
FN6838.0
Initial Release
About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.
Reliability reports are also available from our website at www.intersil.com/support
14
FN6838.1
September 8, 2015
EL5420T
Small Outline Package Family (SO)
A
D
h X 45¬
(N/2)+1
N
A
PIN #1
I.D. MARK
E1
E
c
SEE DETAIL ‚Äö
1
(N/2)
B
L1
0.010 M C A B
e
H
C
A2
GAUGE
PLANE
SEATING
PLANE
A1
0.004 C
0.010 M C A B
L
b
0.010
4¬¨¬®¬
DETAIL X
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
INCHES
SYMBOL
SO-14
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)
TOLERANCE
NOTES
A
0.068
0.068
0.068
0.104
0.104
0.104
0.104
MAX
-
A1
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.003
-
A2
0.057
0.057
0.057
0.092
0.092
0.092
0.092
0.002
-
b
0.017
0.017
0.017
0.017
0.017
0.017
0.017
0.003
-
c
0.009
0.009
0.009
0.011
0.011
0.011
0.011
0.001
-
D
0.193
0.341
0.390
0.406
0.504
0.606
0.704
0.004
1, 3
E
0.236
0.236
0.236
0.406
0.406
0.406
0.406
0.008
-
E1
0.154
0.154
0.154
0.295
0.295
0.295
0.295
0.004
2, 3
e
0.050
0.050
0.050
0.050
0.050
0.050
0.050
Basic
-
L
0.025
0.025
0.025
0.030
0.030
0.030
0.030
0.009
-
L1
0.041
0.041
0.041
0.056
0.056
0.056
0.056
Basic
-
h
0.013
0.013
0.013
0.020
0.020
0.020
0.020
Reference
-
16
20
24
28
Reference
-
N
SO-8
SO16
(0.150”)
8
14
16
Rev. M 2/07
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
15
FN6838.1
September 8, 2015
EL5420T
QFN (Quad Flat No-Lead) Package Family
MDP0046
QFN (QUAD FLAT NO-LEAD) PACKAGE FAMILY
(COMPLIANT TO JEDEC MO-220)
A
MILLIMETERS
D
N
(N-1)
(N-2)
B
1
2
3
PIN #1
I.D. MARK
E
(N/2)
2X
0.075 C
2X
0.075 C
N LEADS
TOP VIEW
0.10 M C A B
(N-2)
(N-1)
N
b
L
SYMBOL QFN44 QFN38
TOLERANCE
NOTES
A
0.90
0.90
0.90
0.90
±0.10
-
A1
0.02
0.02
0.02
0.02
+0.03/-0.02
-
b
0.25
0.25
0.23
0.22
±0.02
-
c
0.20
0.20
0.20
0.20
Reference
-
D
7.00
5.00
8.00
5.00
Basic
-
Reference
8
Basic
-
Reference
8
Basic
-
D2
5.10
3.80
5.80 3.60/2.48
E
7.00
7.00
8.00
1
2
3
6.00
E2
5.10
5.80
5.80 4.60/3.40
e
0.50
0.50
0.80
0.50
L
0.55
0.40
0.53
0.50
±0.05
-
N
44
38
32
32
Reference
4
ND
11
7
8
7
Reference
6
NE
11
12
8
9
Reference
5
MILLIMETERS
PIN #1 I.D.
3
QFN32
SYMBOL QFN28 QFN24
QFN20
QFN16
A
0.90
0.90
0.90
0.90
0.90
±0.10
-
A1
0.02
0.02
0.02
0.02
0.02
+0.03/
-0.02
-
b
0.25
0.25
0.30
0.25
0.33
±0.02
-
c
0.20
0.20
0.20
0.20
0.20
Reference
-
D
4.00
4.00
5.00
4.00
4.00
Basic
-
D2
2.65
2.80
3.70
2.70
2.40
Reference
-
(E2)
(N/2)
NE 5
7
(D2)
BOTTOM VIEW
0.10 C
e
C
SEATING
PLANE
TOLERANCE NOTES
E
5.00
5.00
5.00
4.00
4.00
Basic
-
E2
3.65
3.80
3.70
2.70
2.40
Reference
-
e
0.50
0.50
0.65
0.50
0.65
Basic
-
L
0.40
0.40
0.40
0.40
0.60
±0.05
-
N
28
24
20
20
16
Reference
4
ND
6
5
5
5
4
Reference
6
NE
8
7
5
5
4
Reference
5
Rev 11 2/07
0.08 C
N LEADS
& EXPOSED PAD
SEE DETAIL "X"
NOTES:
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Tiebar view shown is a non-functional feature.
SIDE VIEW
3. Bottom-side pin #1 I.D. is a diepad chamfer as shown.
4. N is the total number of terminals on the device.
(c)
C
5. NE is the number of terminals on the “E” side of the package
(or Y-direction).
2
A
(L)
A1
N LEADS
DETAIL X
6. ND is the number of terminals on the “D” side of the package
(or X-direction). ND = (N/2)-NE.
7. Inward end of terminal may be square or circular in shape with radius
(b/2) as shown.
8. If two values are listed, multiple exposed pad options are available.
Refer to device-specific datasheet.
16
FN6838.1
September 8, 2015
EL5420T
Thin Shrink Small Outline Package Family (TSSOP)
0.25 M C A B
D
MDP0044
A
THIN SHRINK SMALL OUTLINE PACKAGE FAMILY
(N/2)+1
N
MILLIMETERS
SYMBOL 14 LD 16 LD 20 LD 24 LD 28 LD TOLERANCE
PIN #1 I.D.
E
E1
0.20 C B A
1
(N/2)
B
2X
N/2 LEAD TIPS
TOP VIEW
0.05
e
C
SEATING
PLANE
0.10 M C A B
b
0.10 C
N LEADS
H
A
1.20
1.20
1.20
1.20
1.20
Max
A1
0.10
0.10
0.10
0.10
0.10
±0.05
A2
0.90
0.90
0.90
0.90
0.90
±0.05
b
0.25
0.25
0.25
0.25
0.25
+0.05/-0.06
c
0.15
0.15
0.15
0.15
0.15
+0.05/-0.06
D
5.00
5.00
6.50
7.80
9.70
±0.10
E
6.40
6.40
6.40
6.40
6.40
Basic
E1
4.40
4.40
4.40
4.40
4.40
±0.10
e
0.65
0.65
0.65
0.65
0.65
Basic
L
0.60
0.60
0.60
0.60
0.60
±0.15
L1
1.00
1.00
1.00
1.00
1.00
Reference
Rev. F 2/07
NOTES:
1. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusions or gate burrs shall not exceed
0.15mm per side.
SIDE VIEW
2. Dimension “E1” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm per
side.
SEE DETAIL “
3. Dimensions “D” and “E1” are measured at dAtum Plane H.
4. Dimensioning and tolerancing per ASME Y14.5M-1994.
c
END VIEW
L1
A
A2
GAUGE
PLANE
0.25
L
A1
0¬× - 8
DETAIL X
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9001 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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17
FN6838.1
September 8, 2015