IL420/IL4208 Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Low Input Current FEATURES A 1 6 MT2 C 2 5 NC NC 3 4 MT1 • High input sensitivity IFT = 2.0 mA • 600/800 V blocking voltage • 300 mA on-state current • High static dV/dt 10 kV/µs • Inverse parallel SCRs provide commutating dV/dt > 10 kV/µs • Very low leakage < 10 µA i179035 • Isolation test voltage 5300 VRMS DESCRIPTION • Small 6-pin DIP package The IL420/IL4208 consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line package. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2.0 mA (DC). The IL420/IL4208 used two discrete SCRs resulting in a commutating dV/dt of greater than 10 kV/µs. The use of a proprietary dV/dt clam results in a static dV/dt of greater than 10 kV/µs. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistors, disabling the first stage SCR predriver. The 600/800 V blocking voltage permits control of offline voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. The IL420/IL4208 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Solid state relays • Industrial controls • Office equipment • Consumer appliances AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • CSA 93751 • FIMKO and BSI IEC 60950; IEC 60065 only for IL4208 • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 ORDER INFORMATION PART REMARKS IL420 600 V VDRM, DIP-6 800 V VDRM, DIP-6 IL4208 IL420-X006 600 V VDRM, DIP-6 400 mil (option 6) IL420-X007 600 V VDRM, SMD-6 (option 7) IL420-X009 600 V VDRM, SMD-6 (option 9) IL4208-X007 800 V VDRM, SMD-6 (option 7) IL4208-X009 800 V VDRM, SMD-6 (option 9) Note For additional information on the available options refer to option information. Document Number: 83629 Rev. 1.6, 18-Jan-08 For technical questions, contact: [email protected] www.vishay.com 1 IL420/IL4208 Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Low Input Current ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION PART SYMBOL VALUE UNIT VR IF 6.0 60 2.5 100 1.33 V mA A mW mW/°C VDRM VDRM ITM ITSM Pdiss 600 800 300 3.0 500 6.6 V V mA A mW mW/°C VISO 5300 VRMS INPUT Reverse voltage Forward current Surge current Power dissipation Derate from 25 °C OUTPUT IFSM Pdiss IL420 IL4208 Peak off-state voltage RMS on-state current Single cycle surge current Power dissipation Derate from 25 °C COUPLER Isolation test voltage (2) t = 1.0 s Pollution degree (DIN VDE 0109) 2 Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Comparative tracking (3) ≥ 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Tstg - 55 to + 150 °C Tamb - 55 to + 100 °C Tsld 260 °C Storage temperature range Ambient temperature range Soldering temperature (4) max. ≤ 10 s dip soldering ≥ 0.5 mm from case bottom Ω Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Between emitter and detector, climate per DIN 50014, part 2, Nov. 74. (3) Index per DIN IEC 60112/VDE 0303 part 1, group IIIa per DIN VDE 6110. (4) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83629 Rev. 1.6, 18-Jan-08 IL420/IL4208 Optocoupler, Phototriac Output, High dV/dt, Low Input Current Vishay Semiconductors ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.16 1.35 V Reverse current VR = 6.0 V IR 0.1 10 µA VF = 0 V, f = 1.0 MHz Input capacitance Thermal resistance, junction to ambient CIN 40 pF Rthja 750 °C/W OUTPUT Off-state voltage ID(RMS) = 70 µA Repetitive peak off-state voltage IDRM = 100 µA Off-state current VD(RMS) 424 VD(RMS) 565 V IL420 VDRM 600 V IL4208 VDRM 800 460 IBD 10 1.7 IT = 300 mA VTM PF = 1.0, VT(RMS) = 1.7 V ITM f = 50 Hz ITSM Surge (non-repetitive), on-state current Holding current V V VD = VDRM, Tamb = 100 °C On-state voltage On-current IL420 IL4208 IH 65 100 3.0 V 300 mA 3.0 A 500 µA Latching current VT = 2.2 V IL 5.0 LED trigger current VAK = 5.0 V IFT 1.0 2.0 7.0 14 ΔIFT/ΔTj Trigger current temperature gradient Critical rate of rise off-state voltage Critical rate of rise of voltage at current commutation µA mA µA/°C VD = 0.67 VDRM, Tj = 25 °C dV/dtcr 10000 V/µs VD = 0.67 VDRM, Tj = 80 °C dV/dtcr 5000 V/µs VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms, Tj = 25 °C dV/dtcrq 10000 V/µs VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms, Tj = 80 °C dV/dtcrq 5000 V/µs dI/dtcr 8.0 Critical rate of rise of on-state A/µs Rthja 150 °C/W IT = 0 A, VRM = VDM = VD(RMS) dV/dt 5000 V/µs 0.8 pF Thermal resistance, junction to ambient COUPLER Critical rate of rise of coupled input/output voltage Capacitance (input to output) Isolation resistance f = 1.0 MHz, VIO = 0 V CIO VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. SWITCHING CHARACTERISTICS PARAMETER Turn-on time Document Number: 83629 Rev. 1.6, 18-Jan-08 TEST CONDITION SYMBOL VRM = VDM = VD(RMS) ton MIN. 35 µs PF = 1.0, IT = 300 mA toff 50 µs For technical questions, contact: [email protected] TYP. MAX. UNIT www.vishay.com 3 IL420/IL4208 Optocoupler, Phototriac Output, High dV/dt, Low Input Current Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. Climatic classification (according to IEC 68 part 1) MAX. UNIT 55/100/21 Comparative tracking index CTI 175 399 VIOTM 8000 V VIORM 630 V PSO 500 mW ISI 250 mA TSI 175 °C Creepage distance standard DIP-8 7 mm Clearance distance standard DIP-8 7 mm Creepage distance 400 mil DIP-8 8 mm Clearance distance 400 mil DIP-8 8 mm Insulation thickness for IL4208 only 0.4 mm Note As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 150 VF - Forward Voltage (V) 1.3 LED - LED Power (mW) 1.4 Tamb = - 55 °C 1.2 Tamb = 25 °C 1.1 1.0 0.9 Tamb = 85 °C 50 0.8 0.7 0.1 1 10 0 - 60 100 - 20 0 A bi 20 tT 40 t 60 (°C) 80 100 Fig. 3 - Maximum LED Power Dissipation 103 10000 τ 5 Duty Factor 0.005 0.01 0.02 100 t 0.05 0.1 0.2 0.5 IT (mA) 1000 - 40 T Fig. 1 - Forward Voltage vs. Forward Current IF(pk) - Peak LED Current (mA) 100 DF =τ/t Tj = 25 °C = 100 °C 102 IT = f(VT), parameter: Tj 5 101 5 10 10-6 iil420_02 100 10-5 10-4 10-3 10-2 10-1 t - LED Pulse Duration (s) 100 Fig. 2 - Peak LED Current vs. Duty Factor, τ www.vishay.com 4 101 0 1 iil420_04 2 3 4 VT (V) Fig. 4 - Typical Output Characteristics For technical questions, contact: [email protected] Document Number: 83629 Rev. 1.6, 18-Jan-08 IL420/IL4208 Optocoupler, Phototriac Output, High dV/dt, Low Input Current Vishay Semiconductors 400 ITRMS = f(TA), RthJA = 150 K/W Device switch soldered in pcb or base plate. ITRMS (mA) 300 ID = f(Tj), VD = 600 V, parameter: Tj 200 100 0 0 20 40 60 80 100 Tamb (°C) iil420_05 iil420_08 Fig. 8 - Typical Off-State Current Fig. 5 - Current Reduction 400 SIC00007 0.6 P tot for 40 to 60 Hz line operation, Ptot = f(ITRMS) W 0.5 ITRMS (mA) 300 200 100 0 50 T 0.3 Thermocouple measurement must be performed potentially separated to A1 and A2. Measuring junction as near as possible at the case. 60 70 80 = 180 °C = 120 °C = 90 °C = 60 °C = 30 °C 0.2 ITRMS = f(TPIN5), RthJ-PIN5 = 16.5 K/W 0.1 90 0 100 TPIN5 (°C) iil420_06 0 100 200 iil420_09 mA I TRMS 300 Fig. 9 - Power Dissipation Fig. 6 - Current Reduction µs I TRMS 0.4 IFTN = f (tpIF)IFTN normalized to IFT, referring to tpIF)I ≥ 1.0 ms, VOP = 200 V, f = 40 to 60 Hz typ. tgd = f (IFIFT25 °C), VD = 200 V, parameter: Tj Tj = 25 °C 100 °C iil420_07 iil420_10 Fig. 7 - Typical Trigger Delay Time Document Number: 83629 Rev. 1.6, 18-Jan-08 Fig. 10 - Pulse Trigger Current For technical questions, contact: [email protected] www.vishay.com 5 IL420/IL4208 Optocoupler, Phototriac Output, High dV/dt, Low Input Current Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.300 (7.62) 0.048 (1.22) 0.039 (1.00) min. typ. 0.052 (1.32) 0.130 (3.30) 0.150 (3.81) 4° typ. 18° 0.130 (3.30) 0.033 (0.84) typ. 3° to 9° 0.018 (0.46) 0.033 (0.84) typ. 0.020 (0.51) 0.150 (3.81) 0.008 (0.20) 0.012 (0.30) 0.300 to 0.347 0.100 (2.54) typ. i178014 (7.62 to 8.81) Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) min. 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) www.vishay.com 6 0.331 (8.4) min. 0.406 (10.3) max. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. For technical questions, contact: [email protected] 18450 Document Number: 83629 Rev. 1.6, 18-Jan-08 IL420/IL4208 Optocoupler, Phototriac Output, High dV/dt, Low Input Current Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83629 Rev. 1.6, 18-Jan-08 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1