BLP10H605
Broadband LDMOS driver transistor
Rev. 3 — 2 October 2014
Product data sheet
1. Product profile
1.1 General description
A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1.
Application performance
Test signal
CW
f
VDS
PL
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
860
50
5
22.4
59.6
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1, 3, 4, 6, 7, 9, 10, 12
n.c.
2
gate1
5
gate2
8
drain2
11
drain1
13
source
Simplified outline
[1]
Graphic symbol
7UDQVSDUHQWWRSYLHZ
DDD
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLP10H605
HVSON12 plastic thermal enhanced very thin small outline
package; no leads; 12 terminals; body 5 6 0.85 mm
Name
Description
Version
SOT1352-1
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BLP10H605
Product data sheet
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
Conditions
-
104
V
VGS
gate-source voltage
6
+11
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
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Rev. 3 — 2 October 2014
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BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
5. Recommended operating conditions
See application note AN11520 for more details.
DDD
7FDVH
&
Fig 1.
3 :
Recommended operating area; case temperature as a function of power
dissipation
6. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 5 W
[1]
[1]
Typ
Unit
5.5
K/W
Rth(j-c) is measured under RF conditions
7. Characteristics
Table 6.
DC characteristics
Tj = 25 C; unless otherwise specified.
BLP10H605
Product data sheet
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.06 mA
104
-
-
V
VGS(th)
gate-source threshold voltage VDS = 10 V; ID = 6 mA
1.25
1.7
2.25
V
VGSq
gate-source quiescent voltage VDS = 50 V; ID = 30 mA
1.35
1.78
2.25
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
0.95
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 210 mA
-
4580
-
m
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
Table 7.
AC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
0.07
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 0 V; f = 1 MHz
-
6.8
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
2.24
-
pF
Table 8.
RF characteristics
Test signal: CW pulsed; tp = 50 s; = 10 %; f = 860 MHz; RF performance at VDS = 50 V;
IDq = 30 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit [1].
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 5 W
20.2
22.4
27.4
dB
D
drain efficiency
PL = 5 W
57
59.6
-
%
[1]
The industrial test method is performed on special hardware to accommodate the requirements of
production. The test results in this table are correlated to correspond with a performance in the application.
8. Test information
8.1 Ruggedness in class-AB operation
The BLP10H605 is capable of withstanding a load mismatch corresponding to
VSWR = 35 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 30 mA; PL = 5 W; f = 860 MHz.
8.2 Test circuit
PP
5
5
/
&
&
&
&
4
&
PP
&
&
&
&
DDD
Printed-Circuit Board (PCB): Rogers RO4350; r = 3.48; height = 0.762 mm; thickness copper
plating = 35 m.
See Table 9 for a list of components.
Fig 2.
BLP10H605
Product data sheet
Component layout
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Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 11
BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
Table 9.
List of components
See Figure 2 for component layout.
Component Description
Value
Remarks
C1, C4, C7
multilayer ceramic chip capacitor
100 pF
[1]
C2
multilayer ceramic chip capacitor
8.2 pF
[1]
C3
multilayer ceramic chip capacitor
5.1 pF
[1]
C5
multilayer ceramic chip capacitor
1 F, 25 V
C6
multilayer ceramic chip capacitor
2.2 pF
C8
multilayer ceramic chip capacitor
1 F, 50 V
C9
electrolytic capacitor
220 F, 63 V
L1
wire inductor, 0.8 mm copper wire 2 turn, D = 3 mm
R1
resistor
0
SMD 0805
R2
resistor
10
SMD 0805
Q1
transistor
-
BLP10H605
[1]
Murata
GRM31MR71E105KA01L
[1]
Murata
GRM32RR71H105KA01L
American Technical Ceramics type 100A or capacitor of same quality.
8.3 Graphical data
DDD
*S
G%
Ș'
3/
G%P
*S
DDD
,GHDO3/
3/
Ș'
3/ :
VDS = 50 V; IDq = 30 mA; f = 860 MHz.
3L G%P
VDS = 50 V; IDq = 30 mA; f = 860 MHz.
(1) PL(1dB) = 37.55 dBm (5.7 W)
(2) PL(3dB) = 38.24 dBm (6.7 W)
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
BLP10H605
Product data sheet
Fig 4.
Output power as a function of input power;
typical values
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Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11
BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
DDD
*S
G%
DDD
Ș'
3/ :
3/ :
VDS = 50 V; f = 860 MHz.
VDS = 50 V; f = 860 MHz.
(1) IDq = 10 mA
(1) IDq = 10 mA
(2) IDq = 20 mA
(2) IDq = 20 mA
(3) IDq = 30 mA
(3) IDq = 30 mA
(4) IDq = 40 mA
(4) IDq = 40 mA
Fig 5.
Power gain as a function of output power;
typical values
Fig 6.
DDD
*S
G%
Drain efficiency as a function of output power;
typical values
DDD
Ș'
3/ :
(1) VDS = 30 V
(2) VDS = 35 V
(2) VDS = 35 V
(3) VDS = 40 V
(3) VDS = 40 V
(4) VDS = 45 V
(4) VDS = 45 V
(5) VDS = 50 V
(5) VDS = 50 V
Power gain as a function of output power;
typical values
BLP10H605
Product data sheet
3/ :
IDq = 30 mA; f = 860 MHz.
IDq = 30 mA; f = 860 MHz.
(1) VDS = 30 V
Fig 7.
Fig 8.
Drain efficiency as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
6 of 11
BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
9. Package outline
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Package outline SOT1352-1 (HVSON12)
BLP10H605
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
7 of 11
BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
HF
High Frequency
ISM
Industrial, Scientific and Medical
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
12. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLP10H605 v.3
20141002
Product data sheet
-
BLP10H605 v.2
Modifications
•
•
Table 6 on page 3: table updated
Table 8 on page 4: table updated
BLP10H605 v.2
20140418
Objective data sheet
-
BLP10H605 v.1
BLP10H605 v.1
20140221
Objective data sheet
-
-
BLP10H605
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLP10H605
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLP10H605
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 October 2014
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BLP10H605
NXP Semiconductors
Broadband LDMOS driver transistor
15. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
8.1
8.2
8.3
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Recommended operating conditions. . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 October 2014
Document identifier: BLP10H605