BUZ 31L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 31 L 200 V 13.5 A 0.2 Ω TO-220 AB C67078-S1322-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 ˚C Values Unit A 13.5 IDpuls Pulsed drain current TC = 25 ˚C 54 Avalanche current,limited by Tjmax IAR Avalanche energy,periodic limited by Tjmax EAR Avalanche energy, single pulse EAS 13.5 9 mJ ID = 13.5 A, VDD = 50 V, RGS = 25 Ω L = 1.65 mH, Tj = 25 ˚C 200 VGS Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 ± 20 Class 1 Ptot Power dissipation TC = 25 ˚C W 95 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.32 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 ˚C K/W E IEC climatic category, DIN IEC 68-1 Data Sheet V 55 / 150 / 56 1 05.99 BUZ 31L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 200 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 1.2 1.6 2 IDSS µA VDS = 200 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, VGS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 7 A Data Sheet nA - 2 0.16 0.2 05.99 BUZ 31L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs S VDS≥ 2 * ID * RDS(on)max, ID = 7 A Input capacitance 5 - 1200 1600 - 200 300 - 100 150 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance 12 td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 25 40 - 80 120 - 210 270 - 65 85 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Data Sheet 3 05.99 BUZ 31L Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS A TC = 25 ˚C Inverse diode direct current,pulsed - 54 V 1.2 1.6 trr ns - 180 - Qrr µC VR = 100 V, IF=lS, diF/dt = 100 A/µs Data Sheet - - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge 13.5 VSD VGS = 0 V, IF = 27 A Reverse recovery time - ISM TC = 25 ˚C Inverse diode forward voltage - - 4 1.2 - 05.99 BUZ 31L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 100 14 A W 12 Ptot 80 ID 11 10 70 9 60 8 50 7 6 40 5 30 4 3 20 2 10 0 0 20 40 60 80 100 120 ˚C 1 0 0 160 20 40 60 80 100 120 TC ˚C 160 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 tp = 15.0µs D K/W DS /I A ZthJC = V ID 10 0 DS (o n) 100 µs R 10 1 1 ms 10 -1 D = 0.50 10 ms 10 0.20 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 10 0 10 1 10 10 2 V 10 VDS Data Sheet -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 05.99 BUZ 31L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 30 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 0.65 Ptot = 95W lkj i h g f A Ω e 26 ID 22 d b 3.5 c 4.0 d 4.5 e 5.0 f 5.5 g 6.0 h 6.5 i 7.0 b j 8.0 k 9.0 l 10.0 20 18 c 16 14 12 10 8 b c d 0.55 VGS [V] a 3.0 24 a RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 e 0.20 i k 0.15 6 0.10 a 4 0.05 2 0 0 2 4 6 8 V a 3.0 b 3.5 c 4.0 4 d 4.5 e f 5.0 5.5 8 12 g 6.0 h i 6.5 7.0 16 j 8.0 k l 9.0 10.0 20 VDS A 26 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max ID f h j l VGS [V] = 0.00 0 11 g 22 18 A S 18 gfs 14 16 12 14 12 10 10 8 8 6 6 4 4 2 2 0 0 1 2 3 4 5 6 7 8 V 0 0 10 VGS Data Sheet 2 4 6 8 10 12 14 16 A 20 ID 6 05.99 BUZ 31L Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 7 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.65 4.6 Ω V 0.55 4.0 RDS (on) 0.50 VGS(th) 0.45 3.6 3.2 0.40 2.8 0.35 2.4 98% 0.30 98% 2.0 typ 1.6 typ 0.25 0.20 2% 1.2 0.15 0.8 0.10 0.4 0.05 0.00 -60 -20 20 60 100 ˚C 0.0 -60 160 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V 10 -1 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 31L Avalanche energy EAS = ƒ(Tj) parameter: ID = 13.5 A, VDD = 50 V RGS = 25 Ω, L = 1.65 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 21 A 16 220 mJ EAS V 180 VGS 160 140 12 10 120 8 0,2 VDS max 0,8 VDS max 100 6 80 60 4 40 2 20 0 20 40 60 80 100 120 ˚C 0 0 160 Tj 20 40 60 80 100 120 nC 150 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99