PHOTODIODE GaAs PIN photodiode with preamp G9287-14 ROSA type, 850 nm, 10 Gbps Features Applications l φ1.25 mm sleeve type ROSA (Receiver Optical Sub-Assembly) l High-speed response: 10 Gbps l Low power supply voltage: 3.3 V l Differential output l Sensitivity: +2 to -14 dBm Typ. (Extinction ratio=4.5 dB) l Trans-impedance: 6 kΩ Typ. *1 l 10 gigabit ethernet l Optical fiber communications ■ Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage Reverse voltage (photodiode) Operating temperature Storage temperature Symbol Vcc VR Topr Tstg Value -0.5, +4 7 -20 to +85 -40 to +85 Unit V V °C °C ■ Electrical and optical characteristics (Ta=25 °C, 850 nm, Vcc=3.3 ± 5 % V, Vpd=3.13 to 5.0 V, RL=50 Ω *2, unless otherwise noted) Parameter Responsivity *3 Supply current Cut-off frequency Low cut-off frequency Noise equivalent power *1 Trans-impedance *1 Minimum receivable sensitivity *3 Symbol R Icc fc fc-L NEP Tz Pmin Minimum receivable sensitivity *3 (OMA) Pmin (OMA) Maximum receivable sensitivity Pmax Output amplitude Vomax Dark current ID Optical return loss *3 ORL *1: Single-ended (Vout+) measurement *2: Capacitive coupling *3: Measurement by 50/125 µm GI MM fiber Condition Dark state, RL=∞ -3 dB -3 dB Dark state, DC to 7.5 GHz RL=50 Ω, f=100 MHz Extinction ratio=4.5 dB Extinction 10 Gbps, NRZ, ratio=3 dB PRBS=231-1, Extinction -12 BER=10 ratio=3 dB Extinction ratio=10 dB Dark state, RL=∞ Min. 0.4 6.5 4.5 Typ. 0.55 30 7.0 20 1.5 6 Max. 45 - - -14 - - -10 - - -12 - - +2 - 350 12 450 0.05 14 550 1 - Unit A/W mA GHz kHz µWrms kΩ dBm mVpp nA dB 1 GaAs PIN photodiode with preamp ■ Bit error rate -4 10 -5 10 -6 10 -7 10 -8 10 -9 EXTINCTION RATIO=4.5 dB +5 EXTINCTION RATIO=3 dB 0 -5 -10 -15 -20 -12 dBm (OMA) 10-10 (Ta=25 ˚C, Vout+, Pin= -15 dBm) +10 RELATIVE SENSITIVITY (dB) BIT ERROR RATE 10 ■ Frequency response (Typ. Ta=25 ˚C, Bit rate 10 Gbps, PN=31) 10-3 G9287-14 -25 10-11 10-12 -18 -17 -16 -15 -14 -13 -12 -11 -10 -30 -9 -8 0 2 4 AVERAGE OPTICAL INPUT POWER (dBm) 6 8 10 12 14 16 18 20 FREQUENCY (GHz) KGPDB0058EC KGPDB0064EA ■ Dimensional outline (unit: mm) ■ Eye diagram Bit rate 10 Gbps, PN=31, NRZ, λ=850 nm, Extinction raito 4.5 dB, Vcc=Vpd=3.3 V, Responsivity=0.55 A/W 4.88 (OPTICAL REFERENCE PLANE) 4.17 ± 0.02 (13) 4.64 6.66 ± 0.05 3.97 1.27 ± 0.03 Pin= -13 dBm, 30 mV/div., 20 ps/div. ( 1.25) 3.38 ± 0.03 4.04 ± 0.03 5.08 2.92 2.72 +0.25 0.9-0.2 (2 ×) 2.1 (3 ×) 0.5 × 0.2 t (5 ×) 0.35 ± 0.05 5.94 ± 0.05 (60˚) 5.4 2.54 ± 0.15 6.6 +0.07 2.95-0.03 (3 ×)1.0 5.92 ± 0.2 0.3 PIN No. VoutVout+ Vcc Vpd GND Tolerance unless otherwise noted: ±0.1 KIRDA0176EB KIRDA0176EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KGPD1012E03 Feb. 2005 DN