DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D070 BAS56 High-speed double diode Product data sheet Supersedes data of April 1996 1996 Sep 10 NXP Semiconductors Product data sheet High-speed double diode BAS56 PINNING FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two highspeed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT143 package. The diodes are not connected. • High switching speed: max. 6 ns • Continuous reverse voltage: max. 60 V • Repetitive peak reverse voltage: max. 60 V PIN DESCRIPTION 1 cathode (k1) 2 cathode (k2) 3 anode (a2) 4 anode (a1) • Repetitive peak forward current: max. 600 mA. handbook, halfpage 4 3 APPLICATIONS 4 3 1 2 • High speed switching in e.g. surface mounted circuits. 1 Top view 2 MAM059 Marking code: L51. Fig.1 Simplified outline (SOT143) and symbol. 1996 Sep 10 2 NXP Semiconductors Product data sheet High-speed double diode BAS56 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 60 V 120 V VRRM repetitive peak reverse voltage VRRM repetitive peak reverse voltage VR continuous reverse voltage − 60 V VR continuous reverse voltage series connection − 120 V IF continuous forward current single diode loaded; see Fig.2; note 1 − 200 mA double diode loaded; see Fig.2; note 1 − 150 mA single diode loaded − 600 mA double diode loaded − 430 mA t = 1 μs − 9 A t = 100 μs − 3 A t = 10 ms − 1.7 A IFRM IFSM repetitive peak forward current non-repetitive peak forward current series connection square wave; Tj = 25 °C prior to surge; see Fig.4 − 250 storage temperature −65 +150 °C junction temperature − 150 °C Ptot total power dissipation Tstg Tj Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 3 mW NXP Semiconductors Product data sheet High-speed double diode BAS56 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage see Fig.3; IF = 200 mA; DC value; note 1 IR reverse current see Fig.5 IR reverse current MIN. − MAX. 1.0 UNIT V VR = 60 V − 100 nA VR = 60 V; Tj = 150 °C − 100 μA − series connection VR = 120 V − 100 nA 100 μA VR = 120 V; Tj = 150 °C − Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA; see Fig.7 − 6 ns Vfr forward recovery voltage when switched from IF = 400 mA; tr = 30 ns; see Fig.8 − 2.0 V when switched from IF = 400 mA; tr = 100 ns; see Fig.8 − 1.5 V Note 1. Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 4 VALUE UNIT 360 K/W 500 K/W NXP Semiconductors Product data sheet High-speed double diode BAS56 GRAPHICAL DATA MBG439 300 MBH279 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 (1) 100 100 (2) 0 0 0 Tamb (oC) 100 200 0 Device mounted on a FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 1 2 VF (V) Tj = 25 °C. Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage; typical values. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (μs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 5 104 NXP Semiconductors Product data sheet High-speed double diode BAS56 MBH283 MBH282 102 handbook, halfpage 2.0 handbook, halfpage IR (μA) Cd (pF) 10 1.5 (1) 1 (2) 1.0 10−1 0.5 10−2 100 0 Tj (oC) 0 0 200 (1) VR = 60 V; maximum values. (2) VR = 60 V; typical values. Fig.5 1996 Sep 10 10 20 VR (V) 30 f = 1 MHz; Tj = 25 °C. Fig.6 Reverse current as a function of junction temperature. 6 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed double diode BAS56 handbook, full pagewidth tr tp t D.U.T. IF R = 50 Ω S V = VR 10% IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω IF x R S MGA881 (1) 90% VR input signal output signal (1) IR = 40 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Input signal: forward pulse duration tp = 300 ns; duty factor δ = 0.01. Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 7 t tp output signal NXP Semiconductors Product data sheet High-speed double diode BAS56 PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 2 1 1.1 max o 30 max 0.88 0 0.1 0.48 1.7 TOP VIEW Dimensions in mm. Fig.9 SOT143. 1996 Sep 10 8 0 0.1 0.1 M A B MBC845 NXP Semiconductors Product data sheet High-speed double diode BAS56 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1996 Sep 10 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 1996 Sep 10