DSF8025SE / DSF8025SG DSF8025SE / DSF8025SG Fast Recovery Diode Advance Information DS6153-1 July 2014 (LN31793) APPLICATIONS ■ Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding ■ High Frequency Rectification ■ UPS KEY PARAMETERS VRRM 2500V IF(AV) 650A IFSM 7500A Qr 540µC trr 5.0µs FEATURES ■ Double side cooling ■ High surge capability ■ Low recovery charge VOLTAGE RATINGS Type Number DSF8025SE25 DSF8025SG25 DSF8025SE24 DSF8025SG24 DSF8025SE23 DSF8025SG23 DSF8025SE22 DSF8025SG22 DSF8025SE21 DSF8025SG21 DSF8025SE20 DSF8025SG20 Repetitive Peak Reverse Voltage VRRM V 2500 Conditions VRSM = VRRM + 100V Package outline type code: E Package outline type code: G 2400 (See package details for further information) 2300 Fig. 1 Package outlines 2200 2100 2000 Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DSF8025SE23 for 2300V product in an 'E' outline, DSF8025SG23 for 2300V product in an 'G' outline, Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DSF8025SE / DSF8025SG CURRENT RATINGS Symbol Parameter Conditions Max. Units 650 A Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC IF(RMS) RMS value Tcase = 65oC 1020 A Continuous (direct) forward current Tcase = 65oC 785 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 385 A IF(RMS) RMS value Tcase = 65oC 604 A Continuous (direct) forward current Tcase = 65oC 465 A IF SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Conditions Surge (non-repetitive) forward current Max. Units 7.5 kA 281 x 103 A2s 6.0 kA 180 x 103 A2s 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing THERMAL AND MECHANICAL DATA Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Min. Max. Units dc - 0.047 o Anode dc - 0.094 o Cathode dc - 0.094 o Double side - 0.018 o Single side - 0.036 o - 150 o o C/W C/W Single side cooled Rth(c-h) Thermal resistance - case to heatsink Clamping force 8.0kN with mounting compound Tvj Virtual junction temperature Tstg Storage temperature range -55 175 Clamping force 7.0 9.0 - Forward (conducting) C/W C/W C/W C C kN 2/8 www.dynexsemi.com DSF8025SE / DSF8025SG CHARACTERISTICS Symbol Conditions Parameter Typ. Max. Units VFM Forward voltage At 1000A peak, Tcase = 25oC - 2.3 V IRM Peak reverse current At VRRM, Tcase = 150oC - 50 mA trr Reverse recovery time - 5.0 µs Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 540 µC IRR Reverse recovery current Tcase = 150oC, VR = 100V - 235 A K Soft factor 1.8 - - QRA1 VTO Threshold voltage At Tvj = 150oC - 1.48 V rT Slope resistance At Tvj = 150oC - 0.8 mΩ Peak forward recovery voltage di/dt = 1000A/µs, Tj = 125oC 70 - V VFRP DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR 3/8 www.dynexsemi.com DSF8025SE / DSF8025SG CURVES 3500 500 Measured under pulse conditions Measured under pulse conditions Tj = 25˚C Tj = 150˚C Tj = 25˚C Tj = 150˚C 3000 Instantaneous forward current IF - (A) Instantaneous forward current IF - (A) 400 2500 300 2000 200 1500 100 1000 500 0 1.0 2.0 3.0 Instantaneous forward voltage VF - (V) 0 1.00 4.0 Fig.2 Maximum (limit) forward characteristics 1.25 1.50 1.75 Instantaneous forward voltage VF - (V) Fig.3 Maximum (limit) forward characteristics 250 10000 IFM Current waveform QRA1 VFRP tp = 1ms dIR/dt Reverse recovered charge, Qr - (µC) Transient forward votage, VFR - (V) δy di = δy dt δx δx 0.5x IRR IRR 1000 Tj = 125˚C limit 100 Tj = 25˚C limit IF = 2000A IF = 1000A 50 0 0 Conditions: Tj = 150˚C, VR = 100V Voltage waveform 200 150 2.00 IF = 200A 500 1000 1500 Rate of rise of forward current, dIF/dt - (A/µs) Fig.5 Transient forward voltage vs rate of rise of forward current 2000 100 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig.6 Recovered charge 4/8 www.dynexsemi.com DSF8025SE / DSF8025SG 1000 0.1 Conditions: Tj = 150˚C, VR = 100V Anode side cooled Transient thermal impedance, Zth(j-c) - (˚C/W) A B Reverse recovery current, IRR - (A) C Double side cooled 0.01 100 A: IF = 2000A B: IF = 1000A C: IF = 200A 10 1 10 Rate of rise of reverse current dIR/dt - (A/µs) 100 Fig.7 Typical reverse recovery current vs rate of fall of forward current 0.001 0.001 0.01 0.1 Time - (s) 1.0 10 Fig.8 Maximum (limit) transient thermal impedance junction to case - (˚C/W) 5/8 www.dynexsemi.com DSF8025SE / DSF8025SG PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode Ø42max Ø25nom. 15 14 Ø25nom. Anode Nominal weight: 82g Clamping force: 8kN ±10% Package maybe supplied with pins and/or tags. Package outline type code: E Fig. 9 Package details - E 6/8 www.dynexsemi.com DSF8025SE / DSF8025SG PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (in both electrodes) Cathode Ø58.5 max 27.0 25.4 Ø34 nom Ø34 nom Anode Nominal weight: 250g Clamping force: 12kN ±10% Package outine type code: G Fig. 10 Package details - G 7/8 www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. 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