PROCESS CPD85V Schottky Rectifier 1 Amp Schottky Barrier Rectifier Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 39.4 x 39.4 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 35 x 35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 10,900 PRINCIPAL DEVICE TYPES CMPSH1-4L R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD85V Typical Electrical Characteristics R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m