INCHANGE Semiconductor isc Silicon PNP Power Transistor MJD5731 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT -350 V -5 V Collector Current-Continuous -1.0 A Collector Current-Peak -3.0 A Total Power Dissipation @ TC=25℃ 15 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM PC TJ Tstg W Collector Power Dissipation Ta=25℃ 1.56 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range THERMAL CHARACTERISTICS SYMBO L PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 8.33 ℃/W 80 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor MJD5731 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -10V -1.5 V ICEO Collector Cutoff Current VCE= -250V; IE= 0 -0.1 mA ICBO Collector Cutoff Current VCB= -350V; IE= 0 -10 uA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -0.5 mA hFE fT CONDITIONS MIN TYP MAX -350 IC= -0.3A; VCE= -10V 30 IC= -1A; VCE= -10V 10 IC= -0.2A ;VCE= -10V 10 UNIT V 175 DC Current Gain Current-Gain—Bandwidth Product MHZ Pulse Test: PW≤300μs, Duty Cycle≤2.0% isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark