CBR1F-D020S SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1F-D020S Series types are fast recovery, full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS: (TA=25°C unless otherwise specified) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=40°C) Peak Forward Surge Current Rating for Fusing (t<8.35ms) Operating and Storage Junction Temperature CBR1FD020S CBR1FD040S CBR1FD060S VRRM VR 200 400 600 800 1000 V 200 400 600 800 1000 V VR(RMS) IO 140 280 420 560 700 SYMBOL CBR1F- CBR1FD080S D100S 1.0 V A IFSM I2t 50 A 3.74 A2s TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP IR IR UNITS MAX UNITS 5.0 µA 0.5 mA VF trr trr VR=Rated VRRM VR=Rated VRRM, TA=125°C IF=1.0A 1.3 V IF=0.5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V) IF=0.5A, IR=1.0A, Rec. to 0.25A (600V) 200 ns 300 ns trr CJ IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V) VR=4.0V, f=1.0MHz 500 ns 25 pF R1 (4-January 2010) CBR1F-D020S SERIES SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER SMDIP CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (4-January 2010) w w w. c e n t r a l s e m i . c o m