Sony CXB1558Q-Y Laser driver Datasheet

CXB1558Q-Y
Laser Driver
Description
The CXB1558Q-Y is a high-speed monolithic
Laser Driver/Current Switch with ECL input level.
Open collector outputs are provided at the output
pins (Q, Q) and have the capability of driving
modulation current of 60mApp at a max. data rate of
2.0Gbps (NRZ). DRIVADJ and SDRIV inputs control
the modulation current amplitude, and BIASADJ,
SBIAS inputs control the bias current. Modulation
and bias current can be controlled by either voltage
or current through these pins. This device includes
D-FF for duty cycle correction and Laser Shutdown
function.
32 pin QFP (Ceramic)
Features
• Maximum data rate (NRZ): 2.0Gbps (Typ.)
• Differential Data input: ECL
• D-FF for Duty Cycle Correction
• Laser Shutdown Input: TTL
Applications
• SONET/SDH: 155,622Mb/s,1.2Gb/s
• Fiber channel: 133,266,532Mb/s,1.062Gb/s
• FDDI: 125Mb/s ESCON: 200Mb/s HDTV: 1.5Gb/s
Absolute Maximum Ratings
• Supply voltage
• Input voltage
• Differential input voltage
• Differential clock voltage
• Output current (Continuous)
Input current (Continuous)
• Storage temperature
Vcc – VEE
–0.3 to +7.0
VIN
VEE to +0.5
|VIN – VIN|
0 to 2.5
|VCLK – VCLK|
0 to 2.5
IQ, IBIAS
0 to 80
IDRVADJ
0 to 8
IBIASADJ
0 to 8
Tstg
–65 to +150
Recommended Operating Conditions
• DC power supply voltage
Vcc – VEE
• Operating case temperature
Tc
4.75 to 5.46
0 to +85
V
V
V
V
mA
mA
mA
°C
V
°C
Structure
Bipolar silicon monolithic IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94720-PK
CXB1558Q-Y
VEE1 25
VCC2
LDOFF
NC
CLK
CLK
VEE
NC
NC
Block Diagram and Pin Assignment
24
23
22
21
20
19
18
17
16 NC
VOLTAGE
SOURCE
VBB 26
15 NC
D 27
14 NC
D-FF
D 28
13 NC
INPUT SIGNAL
MONITOR
VCC1 29
12 NC
11 BIASADJ
P 30
MODULATION
GENERATOR
P 31
BIAS
GENERATOR
10 VEE2
9 SBIAS
VEE2
Q
Q
5
6
7
8
BIASA
4
BIASB
3
Q
2
Q
1
SDRIV
DRIVADJ 32
Truth table
LDOFF
D
Q
P
H
L
H
H
H
H
L
L
L
L
H
H
L
H
H
L
∗ In a case of resistor load.
–2–
CXB1558Q-Y
Pin Description
Pin
No.
1
32
Symbol
SDRIV
DRIVADJ
2, 10 VEE2
Typical voltage (V)
DC
0mA to
8mA∗1
Equivalent circuit
AC
—
3
0mA to
6mA∗2
VCC
1
4
0mA to
40mA∗2
32
5
0mA to
60mA∗1
2
—
—
6
10
VEE
0mA to
40mA∗2
8
BIASB
0mA to
30mA
8
Modulation generator
current adjustment.
Modulation generator
current output.
7
7
Modulation generator
current monitor.
Negative power supply
pin.
–5.2V
0mA to
60mA∗1
Q
6
5
VEE to
VEE +2.5V
3
Q
4
Description
—
Bias generator current
output.
VCC
BIASA
9
9
11
SBIAS
BIASADJ
0mA to
8mA
—
VEE to
VEE +2.5V
—
11
2
Bias generator current
adjustment.
VEE
10
Bias generator current
monitor.
VCC
29
20
CLK
200Ω
21
—
21
–1.84V to
–0.81V
CLK
19
19
Clock signal input.
200Ω
20
VEE
–5.2V
VEE
—
∗1 VEE = –5.46V to –4.94V
∗2 VEE = –4.94V to –4.75V
–3–
CXB1558Q-Y
Pin
No.
Symbol
Typical voltage (V)
DC
Equivalent circuit
AC
Description
VCC
Reference voltage
(–1.3V)
Use for the reference
voltage in the case of
single-phase input.
Max. drive current
±200µA
900Ω
26
VBB
–1.3V
—
26
500µ
VEE
25
VEE1
27
D
–5.2V
—
VCC
29
Negative power supply
pin.
200Ω
27
—
28
D
29
VCC1
0V
–1.84V to
–0.81V
28
—
25
VEE
30
30
P
—
Data signal input.
200Ω
200Ω
31
200Ω
Input signal monitor
output.
0mA to
2.7mA
31
P
Positive power supply
pin.
—
1.7mA
VEE
–4–
CXB1558Q-Y
Electrical Characteristics
• DC Electrical Characteristics
Item
Power supply current
(VCC1 = VCC2 = GND, VEE1 = VEE2 = –5.46 to –4.75V, Tc = 0 to +85°C)
Symbol
IEE
Condition
Min.
Typ.
Max.
Unit
IQ = 0mA, IBIAS = 0mA
–110
–78
—
IQ = 60mA, IBIAS = 60mA
–260
–213
—
VEE = –5.46 to –4.94V
60
—
—
VEE = –4.94 to –4.75V
40
—
—
–2.5
—
2.0
V
60
—
—
mA
–2.7
—
0.0
mA
Max. Modulation current
IQ
Modulation output voltage range
VQ
Tc = 25°C
Max. Bias current
IBIAS
IBIASA + IBIASB
Bias output voltage range
VBIAS
Modulation current monitor output
voltage range
VSQ
at voltage control
application
–2.7
—
0.0
Bias current monitor output voltage
range
VSBIAS
at voltage control
application
–2.7
—
0.0
Input signal monitor current
IP
1
1.7
2.7
Input signal monitor output voltage
range
VP
–2.5
—
2.0
ECL Input High voltage
VEDH
–1.17
—
–0.81
ECL Input Low voltage
VEDL
–1.84
—
–1.48
ECL Input High current
IEDH
—
—
20
TTL Input High voltage
VTDH
VEE + 2.0
—
Vcc
TTL Input Low voltage
VTDL
VEE – 0.5
—
VEE + 0.8
TTL Input High current
ITDH
—
—
10
TTL Input Low current
ITDL
–320
—
—
Reference bias voltage
VBB
–1.38
–1.32
–1.26
Min.
Typ.
Max.
Tc = 25°C
V
mA
V
µA
V
µA
V
Ratio of current setup
Item
Symbol
Condition
Modulation current
vs. Modulation monitor current
S1
at voltage control application
9.0
11.4
12.0
Modulation current
vs. Modulation control current
S2
at current control application
6.5
8.6
10.5
Bias current vs. Bias monitor current
S3
at voltage control application
11.0
12.0
13.0
Bias current vs. Bias control current
S4
at current control application
7.4
9.8
12.0
–5–
CXB1558Q-Y
• AC Electrical Characteristics
(VCC1 = VCC2 = GND, VEE1 = VEE2 = –5.46 to –4.75V, Tc = 0 to +85°C, Rl = 25Ω to GND)
Item
Symbol
Condition
NRZ
Min.
Typ.
Max.
Unit
1.6
2.0
—
Gbps
GHz
Max. Data rate
fDMAX
Max. FF Operating Frequency
fFMAX
1.6
2.0
—
Set Up Time
Ts
150
—
—
Hold Time
TH
10
—
—
Shut Down Time
TSHUT
—
—
30
Rise time
TTLH
—
170
—
Fall time
TTHL
—
150
—
20 to 80%
IQ = 60mA, IBIAS = 0
Application Circuit
Current Control Application
VCLK
VEE1
VEE = –5.2V
0.01µF
25
ECL Level
Single Input
VEE
CLK
21
22
19
20
NC
VEE = –5.2V
NC
23
24
0.01µF
NC
VCC2
LDOFF
TTL Level
Input
L : Shut down
Open High
CLK
VSHUT
18
17
16 NC
VOLTAGE
SOURCE
VBB
D
ECL Level
Single Input
D
VIN
26
15 NC
27
14 NC
D-FF
13 NC
28
INPUT SIGNAL
MONITOR
VCC1
29
12 NC
BIASADJ
P
11
30
200Ω P
MODULATION
GENERATOR
31
VEE = –5.2V
BIAS
GENERATOR
10
IP
VEE2
SBIAS
DRIVADJ
9
32
IBIAS : IBIASADJ ≈ 10 : 1
0.1µH
IBIAS
IQ
IQ : IDRVADJ ≈ 9 : 1
VEE = –5.2V
Laser
Diode
–6–
BIASB
Q
Q
Q
5.1Ω
IDRIVADJ
IBIASADJ
8
7
BIASA
6
5
4
3
VEE2
SDRIV
2
Q
1
ps
µs
ps
CXB1558Q-Y
Measurement Circuit (DC)
CLKin
VEE = –5.2V
VEE1
25
VEE
CLK
19
20
NC
21
22
NC
23
24
CLK
0.01µF
VEE = –5.2V
NC
VCC2
LDOFF
VSHUT
18
17
16 NC
VOLTAGE
SOURCE
0.01µF VBB
26
14 NC
D-FF
28
13 NC
INPUT SIGNAL
MONITOR
VCC1
29
10
BIASADJ
VEE = –5.2V
VEE2
SBIAS
9
32
2
SDRIV
6
5
4
3
8
7
BIASA
1
BIASB
DRIVADJ
BIAS
GENERATOR
MODULATION
GENERATOR
31
Q
IP
P
Q
200Ω
11
30
VEE2
P
12 NC
Q
D
VIN
27
Q
D
15 NC
IBIASADJ
A IQB
IDRVADJ
A IQ
A IBIAS
VEE = –5.2V
CLKin
VEE1
0.01µF
25
22
21
VEE
CLK
19
20
NC
23
NC
24
VEE = –5.2V
CLK
0.01µF
VEE = –5.2V
NC
VCC2
LDOFF
VSHUT
18
17
16 NC
VOLTAGE
SOURCE
VBB
26
D
D
VIN
15 NC
27
14 NC
D-FF
13 NC
28
INPUT SIGNAL
MONITOR
VCC1
29
12 NC
P
11
30
200Ω
IP
P
DRIVADJ
BIAS
GENERATOR
MODULATION
GENERATOR
31
10
BIASADJ
510Ω
VEE2
VBIAS
SBIAS
9
32
510Ω
BIASB
Q
Q
Q
8
7
BIASA
6
5
4
3
VEE2
SDRIV
2
Q
1
VMOD
A
IQM
A
A
IQB
VEE = –5.2V
–7–
A IQ
A IBIAS
VEE = –5.2V
IBM
CXB1558Q-Y
Measurement Circuit (AC)
CLKin
25
NC
D-FF
13 NC
28
INPUT SIGNAL
MONITOR
12 NC
BIASADJ
11
30
MODULATION
GENERATOR
31
BIAS
GENERATOR
10
9
32
1
2
6
5
4
3
51Ω
VEE = –5.2V
VEE2
SBIAS
8
7
BIASA
DRIVADJ
VEE
14 NC
BIASB
IP
P
CLK
27
29
200Ω
CLK
15 NC
VCC1
P
17
26
Q
D
VIN
18
16 NC
Q
D
19
20
Q
VBB
21
VOLTAGE
SOURCE
Q
0.01µF
22
VEE2
VEE1
SDRIV
VEE = –5.2V
23
24
NC
0.01µF
VEE = –5.2V
NC
VCC2
LDOFF
VSHUT
51Ω
IDRVADJ
VEE = –5.2V
Digitizing oscilloscope
Q Monitor
Coaxial cable
QB Monitor
50Ω
–8–
50Ω
CXB1558Q-Y
Voltage Control Application
VCLK
VEE1
VEE = –5.2V
0.01µF
VIN
25
21
VEE
19
20
NC
22
NC
CLK
VEE = –5.2V
18
17
VOLTAGE
SOURCE
16 NC
VBB
D
ECL Level
Single Input
23
24
0.01µF
ECL Level
Single Input
NC
VCC2
LDOFF
TTL Level
Single Input
L: Shut down
Open High
CLK
VSHUT
D
26
15 NC
27
14 NC
D-FF
28
13 NC
INPUT SIGNAL
MONITOR
VCC1
29
12 NC
11
30
200Ω P
BIAS
GENERATOR
MODULATION
GENERATOR
31
10
IP
510Ω
VEE2
SBIAS
VEE = –5.2V
9
32
DRIVADJ
510Ω
BIASB
Q
Q
A
8
7
BIASA
6
5
4
3
Q
SDRIV
2
Q
1
VEE2
VDRIVADJ
VBIASADJ
BIASADJ
P
IBIASMONITOR
IQMONITOR
5.1Ω
A
IQ : IQMONITOR ≈ 11 : 1
VEE = –5.2V
IBIAS : IBIASMONITOR ≈ 12 : 1
0.1µH
IBIAS
IQ
Laser
Diode
Cautions for Handling
1. The outputs (Q, Q, BIASA, BIASB, SDRIV, SBIAS, P and P) on this IC are the open collector type.
Therefore, when these pins are not bing used, connect them to Vcc.
2. When the inputs (DRIVEADJ and BIASADJ) are not bing used, connect them to VEE.
3. Do not apply voltage over VEE + 2.5V to DRIVADJ pin and BIASADJ pin.
4. In voltage control Application, do not apply voltage over the output voltage range to SDRIV pin and SBIAS
pin. (see DC Characteristics of Laser Part and Voltage Control Application Circuit.)
5. Maximum drive current of VBB pin is ±200µA.
6. Maximum input differential voltage is 2.5V. ( | D – D | , | CLK – CLK | )
7. As the electronic breakdown level is weak, take care to handle.
–9–
CXB1558Q-Y
Example of Representative Characteristics
Bias current vs. Bias control current
Modulation current vs. Modulation control current
100
80
IBIAS – Bias current (mA)
IQ – Modulation current (mA)
100
60
40
20
0
0
2
4
6
8
80
60
40
20
0
10
0
4
6
8
10
Bias current vs. Bias control voltage
Modulation current vs. Modulation control voltage
100
100
80
80
IBIAS – Bias current (mA)
IQ – Modulation current (mA)
2
IBIASADJ – Bias control current (mA)
IBIAS : IBIASADJ ≈ 10 : 1
IDRIVADJ – Modulation control current (mA)
IQ : IDRIVADJ ≈ 9 : 1
60
40
20
0
60
40
20
0
0
0.5
1
1.5
2
0
VDRVADJ – Modulation control voltage (V)
IQ ≈ 0.1 × ( Vmod – 0.8 ) [A]
0.5
1
1.5
VBIAS – Bias control voltage [V]
IBIAS ≈ 0.11 × ( VBIAS – 0.8 ) [A]
– 10 –
2
CXB1558Q-Y
Package Outline
Unit: mm
32PIN QFP (CERAMIC)
14.73 ± 0.3
4.92 MAX
0.15 ± 0
.05
17
24
16
32
9
10.63 MAX
25
1
0.76
0.48 ± 0.1
0° to 10°
PACKAGE STRUCTURE
PACKAGE MATERIAL
CERAMIC
TIN PLATING
SONY CODE
QFP-32C-L01
LEAD TREATMENT
EIAJ CODE
XQFP023-G-0000-A
LEAD MATERIAL
42 ALLOY
PACKAGE WEIGHT
0.3g
JEDEC CODE
– 11 –
(0.825)
1.016
0.635 ± 0.125
8
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