isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD544/A/B/C DESCRIPTION ·70 W at 25°C Case Temperature ·Complement to Type BD543/A/B/C ·8 A Continuous Collector Current APPLICATIONS ·Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BD544 -40 BD544A -60 BD544B -80 BD544C -100 BD544 -40 BD544A -60 Collector-Base Voltage UNIT V Collector-Emitter Voltage V BD544B -80 BD544C -100 Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -10 A PC Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ TJ Tstg 70 W 2 150 ℃ -65~150 ℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-Emitter Breakdown Voltage CONDITIONS MIN BD544 -40 BD544A -60 TYP. MAX IC= -30mA ; IB= 0 UNIT V BD544B -80 BD544C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A -0.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -8A; IB= -1.6A -1.0 V Base-Emitter On Voltage IC= -5A; VCE= -4V -1.4 V BD544 VCE= -40V; VBE= 0 -0.4 BD544A VCE= -60V; VBE= 0 -0.4 VBE(on) ICES ICEO Collector Cutoff Current Collector Cutoff Current B B B mA BD544B VCE= -80V; VBE= 0 -0.4 BD544C VCE= -100V; VBE= 0 -0.4 BD544/A VCE= -30V; IB= 0 -0.7 mA BD544B/C VCE= -60V; IB= 0 -1 mA B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -4V 60 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 40 hFE-3 DC Current Gain IC= -5A ; VCE= -4V 15 Switching Times ton Turn-On Time toff Turn-Off Time isc Website：www.iscsemi.cn IC= -6A; IB1= -IB2= -0.6A; VBE(off)= 4V, RL= 5Ω 2 0.4 μs 0.7 μs