ISC BD544C Isc silicon pnp power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
BD544/A/B/C
DESCRIPTION
·70 W at 25°C Case Temperature
·Complement to Type BD543/A/B/C
·8 A Continuous Collector Current
APPLICATIONS
·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
VALUE
BD544
-40
BD544A
-60
BD544B
-80
BD544C
-100
BD544
-40
BD544A
-60
Collector-Base Voltage
UNIT
V
Collector-Emitter Voltage
V
BD544B
-80
BD544C
-100
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-10
A
PC
Collector Power Dissipation
@ TC=25℃
Collector Power Dissipation
@ Ta=25℃
TJ
Tstg
70
W
2
150
℃
-65~150
℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.17
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
BD544/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-Emitter
Breakdown Voltage
CONDITIONS
MIN
BD544
-40
BD544A
-60
TYP.
MAX
IC= -30mA ; IB= 0
UNIT
V
BD544B
-80
BD544C
-100
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
-0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -5A; IB= -1A
-0.5
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= -8A; IB= -1.6A
-1.0
V
Base-Emitter On Voltage
IC= -5A; VCE= -4V
-1.4
V
BD544
VCE= -40V; VBE= 0
-0.4
BD544A
VCE= -60V; VBE= 0
-0.4
VBE(on)
ICES
ICEO
Collector
Cutoff Current
Collector
Cutoff Current
B
B
B
mA
BD544B
VCE= -80V; VBE= 0
-0.4
BD544C
VCE= -100V; VBE= 0
-0.4
BD544/A
VCE= -30V; IB= 0
-0.7
mA
BD544B/C
VCE= -60V; IB= 0
-1
mA
B
B
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -4V
60
hFE-2
DC Current Gain
IC= -3A ; VCE= -4V
40
hFE-3
DC Current Gain
IC= -5A ; VCE= -4V
15
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
isc Website:www.iscsemi.cn
IC= -6A; IB1= -IB2= -0.6A;
VBE(off)= 4V, RL= 5Ω
2
0.4
μs
0.7
μs
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