ASI MLN1037S Npn silicon rf power transistor Datasheet

MLN1037S
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
A
The ASI MLN1037S is Designed for
45°
S
B
FEATURES:
D
S
G
•
•
• Omnigold™ Metalization System
C
D
J
E
I
F
G
MAXIMUM RATINGS
H
K
10 A
IC
VCB
VCE
PDISS
60 V
35 V
O
TJ
-65 OC to +200 OC
TSTG
-65 OC to +150 OC
θ JC
5.5 OC/W
CHARACTERISTICS
SYMBOL
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
.572 / 14.53
F
140 W @ TC = 25 C
#8-32 UNC
.130 / 3.30
G
.245 / 6.22
H
.255 / 6.48
.640 / 16.26
I
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10629
O
TC = 25 C
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
PGE
VCE = 20 V
POUT = 5.0 W
RBE = 10 Ω
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
V
60
V
4.0
V
10
f = 1.0 MHz
ICQ = 800 mA
f = 1.0 GHz
UNITS
8.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5
mA
100
---
15
pF
dB
REV. A
1/1
Similar pages