AP9974AGS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS(ON) 12mΩ ▼ Fast Switching Characteristic ID ▼ Lower On-resistance D ▼ RoHS Compliant & Halogen-Free 68A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for switching power applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 68 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 43 A 1 IDM Pulsed Drain Current 272 A PD@TC=25℃ Total Power Dissipation 104 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice Value Units 1.2 ℃/W 40 ℃/W 1 200905151 AP9974AGS-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 60 - - V VGS=10V, ID=45A - - 12 mΩ VGS=4.5V, ID=30A - - 18 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=30A - 50 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=30A - 26 42 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 18 - nC VDS=30V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 60 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 34 - ns tf Fall Time RD=1Ω - 93 - ns Ciss Input Capacitance VGS=0V - 2020 3230 pF Coss Output Capacitance VDS=25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 175 - pF Rg Gate Resistance f=1.0MHz - 1.8 2.7 Ω Min. Typ. IS=45A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 28 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9974AGS-HF 200 120 120 5.0V ID , Drain Current (A) o T C = 150 C 10V 7.0V 6.0V 5.0V 100 ID , Drain Current (A) 160 10V 7.0V 6.0V o T C =25 C 80 V G = 4.0 V 80 V G = 4.0V 60 40 40 20 0 0 0 1 2 3 4 5 6 0 2 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 8 2.0 I D = 30 A I D =45A V G =10V Normalized RDS(ON) T C =25 o C 14 RDS(ON) (mΩ) 6 Fig 2. Typical Output Characteristics 16 12 10 1.6 1.2 0.8 8 0.4 2 4 6 8 10 -50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 40 1.2 Normalized VGS(th) (V) 50 T j =150 o C 50 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage 30 0 o V GS , Gate-to-Source Voltage (V) IS(A) 4 V DS , Drain-to-Source Voltage (V) T j =25 o C 20 10 1.0 0.8 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9974AGS-HF 10 f=1.0MHz 4000 8 3000 V DS = 30 V V DS = 36 V V DS = 48 V 6 C (pF) VGS , Gate to Source Voltage (V) I D = 30 A C iss 2000 4 1000 2 0 C oss C rss 0 0 10 20 30 40 50 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (R thjc) 1 ID (A) 100 100us 10 1ms o 10ms 100ms DC T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 1 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4