AP4513GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D1 D2
D1
D1
D1
▼ Low On-resistance
▼ Fast Switching Performance
N-CH BVDSS
D2
D2
35V
RDS(ON)
36mΩ
ID
G2
G2
S2
G1 S2
S1 G1
S1
▼ RoHS Compliant
SO-8
SO-8
5.8A
P-CH BVDSS
Description
-35V
RDS(ON)
68mΩ
ID
-4.3A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D2
D1
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
35
-35
V
±20
±20
V
Continuous Drain Current
3
5.8
-4.3
A
Continuous Drain Current
3
4.7
-3.4
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
4
1
2
W
0.016
W/℃
12.5
12.5
mJ
5
-5
A
0.05
0.05
mJ
EAR
Repetitive Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200502053-1/7
AP4513GM
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
35
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=5A
-
-
36
mΩ
VGS=4.5V, ID=3A
-
-
60
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=5A
-
7
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=5A
-
6
10
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=28V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=15Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
470
750
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
2/7
AP4513GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-35
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-4A
-
-
68
mΩ
VGS=-4.5V, ID=-2A
-
-
100
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
Max. Units
VDS=-10V, ID=-4A
-
6
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=-4A
-
6
10
nC
Qgs
Gate-Source Charge
VDS=-28V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
410
660
pF
Coss
Output Capacitance
VDS=-25V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
4.Starting Tj=25oC , VDD=25V , L=1mH , R G=25Ω
3/7
AP4513GM
N-Channel
30
30
T A =25 o C
ID , Drain Current (A)
5.0V
ID , Drain Current (A)
10V
7.0V
T A = 150 o C
10V
7.0V
20
4.5V
10
20
5.0V
4.5V
10
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
0
1
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
65
I D =5A
V G =10V
I D =3A
o
T A =25 C
Normalized RDS(ON)
55
RDS(ON0 (mΩ )
2
V DS , Drain-to-Source Voltage (V)
45
1.4
1.0
35
0.6
25
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
Normalized VGS(th) (V)
4
1.1
IS(A)
3
T j =150 o C
T j =25 o C
2
0.7
1
0
0.3
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4513GM
N-Channel
f=1.0MHz
12
1000
VGS , Gate to Source Voltage (V)
ID=5A
V DS =2 8 V
C iss
C (pF)
9
6
100
C oss
C rss
3
10
0
0
4
8
12
1
16
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
10s
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
0.001
0.1
1
10
100
0.0001
0.001
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5/7
AP4513GM
P-Channel
30
30
o
20
T A = 150 C
- 4.5V
10
V G = - 3.0V
0
20
- 5.0V
- 4.5V
10
V G = - 3.0V
0
0
1
2
3
4
5
6
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
95
I D = -4 A
V G = - 10V
I D = -2 A
o
T A =25 C
85
Normalized RDS(ON)
RDS(ON) (mΩ)
- 10V
- 7.0V
o
- 10V
- 7.0V
- 5.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 C
75
1.4
1.0
65
0.6
55
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
Normalized -VGS(th) (V)
1.5
3
-IS(A)
0
2
T j =150 o C
T j =25 o C
1.1
0.7
1
0.3
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4513GM
P-Channel
f=1.0MHz
12
1000
I D =-4A
V DS =-28V
-VGS , Gate to Source Voltage (V)
10
C iss
C (pF)
8
6
C oss
100
C rss
4
2
10
0
0.0
3.0
6.0
9.0
1
12.0
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
-ID (A)
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
10s
DC
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7/7