TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/384 Devices Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol 2N3584 2N3585 Units VCEO VCBO VCER VEBO IB IC PT 250 375 300 300 500 400 Vdc Vdc Vdc Vdc Adc Adc W W 0 C TJ, Tstg 6.0 1.0 2.0 2.5 35 -65 to +200 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 14.85 mW/0C for TA > +250C 2) Derate linearly @ 200 mW/0C for TC > +250C Symbol RθJC Max. 5.0 Unit C/W TO-66* (TO-213AA) 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3584 2N3585 V(BR)CEO 250 300 Vdc 2N3584 2N3585 V(BR)CER 375 500 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Breakdown Voltage IC = 15 mAdc Collector-Emitter Cutoff Current VCE = 150 Vdc Collector-Emitter Cutoff Current VCE = 300 Vdc, VBE = 1.5 Vdc VCE = 400 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc 2N3584 2N3585 ICEO 5.0 mAdc ICEX 1.0 1.0 mAdc IEBO 0.5 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 2N3584, 2N3585 JAN SERIES 120101 Page 1 of 2 ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 25 40 100 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc IC = 100 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.125 Adc Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc VCE(sat) 0.75 Vdc VBE(sat) 1.4 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 200 mAdc, VCE = 10 Vdc, f = 5.0 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 3.0 15 hfe 25 200 120 pF on 3.0 µs off 7.0 µs Cobo SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 1.0 Adc; IB = 100 mAdc; RC = 29 Ω Turn-Off Time VCC = 30 Vdc; IC = 1.0 Adc; IB = -IB = 100 mAdc; RC = 29 Ω t t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 17.5 Vdc, IC = 2.0 Adc Test 2 VCE = 100 Vdc, IC = 350 mAdc Test 3 VCE = 250 Vdc, IC = 37 mAdc 2N3584 VCE = 300 Vdc, IC = 17 mAdc 2N3585 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2