Naina MBR3535 Schottky power diode, 35a Datasheet

MBR3520 thru
MBR3540R
Naina Semiconductor Ltd.
Schottky Power Diode, 35A
Features
•
•
•
•
•
Fast Switching
Low forward voltage drop
High surge capability
High efficiency, low power loss
Normal and Reverse polarity
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Test
Conditions
Parameter
Symbol
MBR3520(R)
MBR3530(R)
MBR3535(R)
MBR3540(R)
Units
Repetitive peak reverse voltage
VRRM
20
30
35
40
V
RMS reverse voltage
VRMS
14
21
25
28
V
VDC
20
30
35
40
V
TC ≤ 110 C
IF
35
35
35
35
A
TC = 25oC
IFSM
600
600
600
600
A
VF
0.68
0.68
0.68
0.68
V
1.5
1.5
1.5
1.5
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
o
IF = 35 A
TJ = 25oC
VR = 20V,
TJ = 25oC
VR = 20V,
TJ = 125oC
Forward voltage
Reverse current
IR
mA
25
25
25
25
MBR3530(R)
MBR3535(R)
MBR3540(R)
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol
Maximum thermal resistance, junction to
case
Operating junction temperature range
Storage temperature
MBR3520(R)
Units
o
Rth(JC)
1.5
TJ
Tstg
-55 to 150
-55 to 175
Mounting torque (non-lubricated threads)
F
2.0
Nm
Approximate allowable weight
W
5.0
g
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
C/W
o
C
C
o
Naina Semiconductor Ltd.
MBR3520 thru
MBR3540R
Package Outline
ALL DIMENSIONS IN MM
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
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