MBR3050CT thru MBR3060CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C(TAB) A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR3050CT MBR3060CT VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics 30 A 200 A 10000 V/us IF=30A @TJ=125oC IF=15A @TJ=25oC IF=30A @TJ=25oC 0.85 0.80 0.95 V @TJ=25oC @TJ=125oC 0.2 40 mA @TC=100oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) 2.0 CJ Typical Junction Capacitance Per Element (Note 3) 400 TJ Operating Temperature Range ROJC TSTG Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Unit Maximum Average Forward Rectified Current Maximum Forward Voltage (Note 1) Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +175 o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES MECHANICAL DATA * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any C C MBR3050CT thru MBR3060CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers 30 20 10 0 RESISTIVE OR INDUCTIVE LOAD 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 40 175 300 250 200 150 100 50 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 TJ = 125 C 1.0 0.1 TJ = 25 C 0.01 0.001 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 1000 TJ = 25 C, f= 1MHz 100 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0