1/4 ◇ STRUCTURE Silicon Monolithic Integrated Circuit ◇ PRODUCT CMOS 16kbit serial EEPROM built-in LDO REGULATOR ◇ PART NUMBER BU9829GUL-W PART NUMBER BU9829GUL-W ◇ FEATURES PACKAGE VCSP50L1 EEPROM PART ・ 2,048 words ×8 bits architecture serial EEPROM ・ Wide operating voltage range (1.6V～3.6V) ・ Serial Peripheral Interface ・ Self-timed write cycle with automatic erase ・ Low Power consumption Write (3.6V) : 1.5mA (Typ.) Read (3.6V) : 0.5mA (Typ.) Standby (3.6V) : 0.1μA (Typ.) ・ Auto-increment of registers address for Read mode ・ 32 byte Page Write mode ・ DATA security Defaults to power up with write-disabled state Software instructions for wirte-enable/disable Block writes protection by status register Write inhibit at low Vcc ・ Data retention : 10 years ・ Endurance : 100,000 erase/write cycles ・ Initial data FFh in all address and 00h in status register LDO REGULATOR PART ・ Low power consumption Standby (3.6V) : 0.1μA (Typ.) Operation (3.6V) : 0.1mA (Typ.) ・ Power on/off by enable pin ・ Setting output voltage by EEPROM coommand (VSET WRITE) ◇ ABSOLUTE MAXIMUM RATING (Ta=25℃) Symbol Vcc1(EEPROM) Supply Voltage Vcc2 (LDO) Power Dissipation Ｐｄ Storage Temperature Tstg Topr Operating Temperature Terminal Voltage － * Degradation is done at 2.2mW/℃(*) Parameter ◇ EEPROM RECOMMENDED OPERATING CONDITION Parameter Supply Voltage Input Voltage Symbol Vcc1 VIN Rating 1.6～3.6 0～Vcc1 Rating Unit -0.3～4.5 V 220 (*) -65～125 -30～85 -0.3～Vcc+0.3 mW ℃ ℃ V ◇ LDO REGURATOR RECOMMENDED OPERATING CONDITION Unit V V REV. A Parameter Supply Voltage Input Voltage Symbol Vcc2 VIN Rating 2.9～3.6 0～Vcc2 Unit V V 2/4 ◇ MEMORY CELL CHARACTERISTICS(Ta=25℃, Vcc1=1.6～3.6V) Specification Parameter Min. Typ. Max. Unit Write/Erase Cycle *1 100,000 - - Cycle Data Retention *1 10 - - Year ◇ EEPROM DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-30～85℃, Vcc1=1.6～3.6V) Parameter Symbol Specification Min. Typ. Max. ◇ EEPROM AC OPERATING CHARACTERISTICS (Ta=-30～85℃) Parameter test condition Unit 1.6V≦Vcc1<1.8V Symbol 1.8V≦Vcc1≦3.6V Min. Typ. Max. Min. Typ. Max. Unit "H" Input Voltage1 VIH1 0.7xVcc1 － Vcc1+0.3 V 2.5V≦Vcc1≦3.6V SCK clock Frequency fSCK － － 2.5 － － 5 MHz "H" Input Voltage2 VIH2 0.75xVcc1 － Vcc1+0.3 V 1.6V≦Vcc1<2.5V SCK High Time tSCKWH 200 － － 80 － － ns "L" Input Voltage1 VIL1 -0.3 － 0.3xVcc1 V 2.5V≦Vcc1≦3.6V SCK Low Time tSCKWL 200 － － 80 － － ns "L" Input Voltage2 VIL2 -0.3 － 0.25xVcc1 V 1.6V≦Vcc1<2.5V CSB High Time tCS 200 － － 90 － － ns "L" Output Voltage1 VOL1 0 － 0.2 V IOL=1.0mA, 2.5V≦Vcc1≦3.6V CSB Setup Time tCSS 150 － － 60 － － ns "L" Output Voltage2 VOL2 0 － 0.2 V IOL=1.0mA, 1.6V≦Vcc1<2.5V CSB Hold Time tCSH 150 － － 60 － － ns "H" Output Voltage1 VOH1 Vcc1-0.2 － Vcc1 V IOH=-0.4mA, 2.5V≦Vcc1≦3.6V SCK Setup Time tSCKS 50 － － 50 － － ns "H" Output Voltage2 VOH2 Vcc1-0.2 － Vcc1 V IOH=-100μA, 1.6V≦Vcc1<2.5V SCK Hold Time tSCKH 50 － － 50 － － ns Input Leakage Current ILI -1 － 1 μA VIN=0V～Vcc1 SI Setup Time tDIS 50 － － 20 － － ns Output Leakage Current ILO -1 － 1 μA VOUT=0V～Vcc1 , CSB=Vcc1 SI Hold Time tDIH 50 － － 20 － － ns Vcc1=1.8V, fSCK=2MHz, tE/W=5ms Output Data Delay Time tPD - － 100 - － 80 ns Byte Write，Page Write, Write Status Register Output Hold Time tOH 0 － - 0 － - ns Vcc1=2.5V , fSCK=5MHz , tE/W=5ms Output Disable Time *1 tOZ － － 200 - － 80 ns Byte Write，Page Write, Write Status Register SCK Rise Time *1 tRC － － 1 - － 1 μs ICC1 - - 1.5 mA Operating current Write ICC2 - － 2.0 mA ICC3 － － 0.2 mA Operating Current Read ICC4 Standby Current ISB － - － － 0.6 1.0 Vcc1=1.8V , fSCK=2MHz, SO=OPEN SCK Fall Time *1 tFC － － 1 - － 1 μs Read，Read Status Register Output Rise Time *1 tRO － － 50 - － 50 ns Vcc1=2.5V , fSCK=5MHz, SO=OPEN Output Fall Time *1 tFO － － 50 - － 50 ns Read，Read Status Register Write Cycle Time tE/W － － 5 － － 5 ms tON 15 － － 15 － － ms mA μA Vcc1=3.6V, CSB=SCK=SI=Vcc1/GND,SO=OPEN Wait Time From Vcc1 on To EEPROM Command *1 Not 100% TESTED ◇ LDO REGULATOR AC OPERATING CHARACTERISTICS ◇ LDO REGULATOR DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-30～85℃, Vcc2=2.9～3.6V) Parameter Symbol Specification Min. Typ. Max. Unit (Ta=-30～85℃) Test condition Parameter Output Voltage1-1 VOUT1-1 2.9 3.0 3.2 V 3.2V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:1] Vcc1 Rise Time Output Voltage1-2 VOUT1-2 2.9 3.0 3.1 V 3.2V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:1] LDOEN Wait Time Output Voltage2-1 VOUT2-1 2.8 2.9 3.1 V 3.1V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:0] Output Voltage2-2 VOUT2-2 2.8 2.9 3.0 V 3.1V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:0] Output Voltage3-1 VOUT3-1 2.7 2.8 3.0 V 3.0V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:1] Output Voltage3-2 VOUT3-2 2.7 2.8 2.9 V 3.0V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:1] Output Voltage4-1 VOUT4-1 2.6 2.7 2.9 V 2.9V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:0] Output Voltage4-2 VOUT4-2 2.6 2.7 2.8 Operating Current Icc - - 200 μA Vcc2=3.6V, IOUT=0A μA Vcc2=3.6V, IOUT=0A, LDOEN=GND V 2.9V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:0] Standby Current ISB - - 1.0 "H"Input Voltage VIH 1.4 - Vcc2+0.3 V 2.9V≦Vcc2≦3.6V "L"Input Voltage VIL -0.3Vcc2 - 0.6 V 2.9V≦Vcc2≦3.6V ○This product is not designed for protection against radioactive rays. ◇ PIN No. / PIN NAME 2.9V≦Vcc≦3.6V Symbol Min. Typ. Max. Unit Test condition tVcc1 - － 5 msec Vcc1x0%→Vcc1x95%point tLDOEN 15 － - msec Vcc1x0%point→LDOEN=High ◇ BLOCK DIAGRAM VOLTAGE INSTRUCTION DECODE CSB DETECTION CONTROL CLOCK SCK WRITE HIGH VOLTAGE INHIBITION GENERATOR INSTRUCTION SI REGISTER PIN No. PIN NAME A1 Vcc1 A2 CSB A3 SCK B1 Vcc2 B2 SI B3 SO C1 VOUT C2 GND LDOEN C3 ADDRESS REGISTER 11bit SO VOUT AMP + - 11bit DECODER 16,384 bit EEPROM R/W DATA REGIST ADDRESS 8bit B.R AMP 8bit LDOEN VOUT SETTING REGISTER RESISTOR Fig.1 BLOCK DIAGRAM REV. A 2bit 3/4 ◇ Input Power Supply Regulation Timing ①Using EEPROM PART In case of using EEPROM part, be sure to raise Vcc1 up to operating voltage. In this time, Vcc2 has no connection with operating. Vcc1 Vcc1 EEPROM EEPROM部電源 Power Supply Vcc2 Vcc2 LDOLDOレギュレータ部電源 regulator Not Power Supply 動作不可 Operating EEPROM動作可能範囲 Operating Not 動作不可 EEPROM動作可能範囲 Operating Operating Not 動作不可 Operating Fig.4 Using EEPROM Part, Regulation Timing ②Using LDO REGULATOR PART In case of using LDO regulator part, be sure to raise Vcc1 and Vcc2 up to operating voltage. After rising Vcc1, wait 15msec and rising LDOEN. When LDOEN is raised, Vcc1 must be operating voltage. tVcc1:MAX5msec tVcc1:MAX5msec Vcc1 EEPROM Power Supply Vcc2 LDO regulator Power Supply tLDOEN:MIN15msec tLDOEN:MIN15msec LDOEN Not Operating Operating Not operating Operating Not Operating Fig.5 Using LDO REGULATOR Part, Regulation Timing ◇ I/O APPLICATION CIRCUIT Pull up resistor is indispensable condition. When CSB is "H" during power ON/OFF, error operating and writing is protected. ○PULL UP RESISTOR OF CSB PIN The pull up resistor is needed in order to prevent error operating and writing from happening. Decide the value of this resistor (Rup) properly, considering VOH, IOH characteristics of controller. IOLM μｰCOM VOLM “L” OUTPUT EEPROM VILE “L” INPUT Fig.3 PULL UP RESISTOR OF CSB PIN ・VILE:VIL specification of EEPROM ・VOLM:VOL specification of CONTROLLER ・IOLM:IOL specification of CONTROLLER VCC－VOLM ･･･① IOLM ･･･② VILE ≧ VOLM Example) When Vcc=5V, VILE=1.5V, VOLM＝0.4V, IOLM=2mA, according to ①, 5－0.4 Rpu ≧ 2×10-3 ∴ Rpu ≧ 2.5[kΩ] Rpu ≧ If the Rpu is under the conditions of the equation ①, VOLM is 0.4V or more. If the Rpu is under the conditions of the equation ②, VILE(=1.5V) is VOLM or less. ◇CAUTIONS ON USE (1) Absolute maximum ratings If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded, LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI. (2) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than that of GND terminal. (3) Heat design In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin. (4) Terminal to terminal shortcircuit and wrong packaging When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be destructed. (5) Strong electromagnetic field Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently. REV. A 4/4 ◇PHYSICAL DIMENSION 9829 Lot.No Fig.4 PHYSICAL DIMENSION VCSP50L1 (BU9829GUL-W) REV. A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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