Rohm BU9829GUL-W Silicon monolithic integrated circuit Datasheet

1/4
◇ STRUCTURE
Silicon Monolithic Integrated Circuit
◇ PRODUCT
CMOS 16kbit serial EEPROM built-in LDO REGULATOR
◇
PART NUMBER
BU9829GUL-W
PART NUMBER
BU9829GUL-W
◇ FEATURES
PACKAGE
VCSP50L1
EEPROM PART
・ 2,048 words ×8 bits architecture serial EEPROM
・ Wide operating voltage range (1.6V~3.6V)
・ Serial Peripheral Interface
・ Self-timed write cycle with automatic erase
・ Low Power consumption
Write
(3.6V)
:
1.5mA (Typ.)
Read
(3.6V)
:
0.5mA (Typ.)
Standby
(3.6V)
:
0.1μA (Typ.)
・ Auto-increment of registers address for Read mode
・ 32 byte Page Write mode
・ DATA security
Defaults to power up with write-disabled state
Software instructions for wirte-enable/disable
Block writes protection by status register
Write inhibit at low Vcc
・ Data retention
: 10 years
・ Endurance
: 100,000 erase/write cycles
・ Initial data FFh in all address and 00h in status register
LDO REGULATOR PART
・ Low power consumption
Standby
(3.6V)
:
0.1μA (Typ.)
Operation (3.6V)
:
0.1mA (Typ.)
・ Power on/off by enable pin
・ Setting output voltage by EEPROM coommand (VSET WRITE)
◇ ABSOLUTE MAXIMUM RATING (Ta=25℃)
Symbol
Vcc1(EEPROM)
Supply Voltage
Vcc2 (LDO)
Power Dissipation
Pd
Storage Temperature
Tstg
Topr
Operating Temperature
Terminal Voltage
-
* Degradation is done at 2.2mW/℃(*)
Parameter
◇ EEPROM RECOMMENDED OPERATING CONDITION
Parameter
Supply Voltage
Input Voltage
Symbol
Vcc1
VIN
Rating
1.6~3.6
0~Vcc1
Rating
Unit
-0.3~4.5
V
220 (*)
-65~125
-30~85
-0.3~Vcc+0.3
mW
℃
℃
V
◇ LDO REGURATOR RECOMMENDED OPERATING CONDITION
Unit
V
V
REV. A
Parameter
Supply Voltage
Input Voltage
Symbol
Vcc2
VIN
Rating
2.9~3.6
0~Vcc2
Unit
V
V
2/4
◇ MEMORY CELL CHARACTERISTICS(Ta=25℃, Vcc1=1.6~3.6V)
Specification
Parameter
Min.
Typ.
Max.
Unit
Write/Erase Cycle
*1
100,000
-
-
Cycle
Data Retention
*1
10
-
-
Year
◇ EEPROM DC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-30~85℃, Vcc1=1.6~3.6V)
Parameter
Symbol
Specification
Min.
Typ.
Max.
◇ EEPROM AC OPERATING CHARACTERISTICS
(Ta=-30~85℃)
Parameter
test condition
Unit
1.6V≦Vcc1<1.8V
Symbol
1.8V≦Vcc1≦3.6V
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
"H" Input Voltage1
VIH1 0.7xVcc1 - Vcc1+0.3
V
2.5V≦Vcc1≦3.6V
SCK clock Frequency
fSCK
-
-
2.5
-
-
5
MHz
"H" Input Voltage2
VIH2
0.75xVcc1
- Vcc1+0.3
V
1.6V≦Vcc1<2.5V
SCK High Time
tSCKWH
200
-
-
80
-
-
ns
"L" Input Voltage1
VIL1
-0.3
- 0.3xVcc1
V
2.5V≦Vcc1≦3.6V
SCK Low Time
tSCKWL
200
-
-
80
-
-
ns
"L" Input Voltage2
VIL2
-0.3
-
0.25xVcc1
V
1.6V≦Vcc1<2.5V
CSB High Time
tCS
200
-
-
90
-
-
ns
"L" Output Voltage1
VOL1
0
-
0.2
V
IOL=1.0mA, 2.5V≦Vcc1≦3.6V
CSB Setup Time
tCSS
150
-
-
60
-
-
ns
"L" Output Voltage2
VOL2
0
-
0.2
V
IOL=1.0mA, 1.6V≦Vcc1<2.5V
CSB Hold Time
tCSH
150
-
-
60
-
-
ns
"H" Output Voltage1
VOH1 Vcc1-0.2 -
Vcc1
V
IOH=-0.4mA, 2.5V≦Vcc1≦3.6V
SCK Setup Time
tSCKS
50
-
-
50
-
-
ns
"H" Output Voltage2
VOH2 Vcc1-0.2 -
Vcc1
V
IOH=-100μA, 1.6V≦Vcc1<2.5V
SCK Hold Time
tSCKH
50
-
-
50
-
-
ns
Input Leakage Current
ILI
-1
-
1
μA VIN=0V~Vcc1
SI Setup Time
tDIS
50
-
-
20
-
-
ns
Output Leakage Current
ILO
-1
-
1
μA VOUT=0V~Vcc1 , CSB=Vcc1
SI Hold Time
tDIH
50
-
-
20
-
-
ns
Vcc1=1.8V, fSCK=2MHz, tE/W=5ms
Output Data Delay Time
tPD
-
-
100
-
-
80
ns
Byte Write,Page Write, Write Status Register
Output Hold Time
tOH
0
-
-
0
-
-
ns
Vcc1=2.5V , fSCK=5MHz , tE/W=5ms
Output Disable Time
*1
tOZ
-
-
200
-
-
80
ns
Byte Write,Page Write, Write Status Register
SCK Rise Time
*1
tRC
-
-
1
-
-
1
μs
ICC1
-
-
1.5
mA
Operating current
Write
ICC2
-
-
2.0
mA
ICC3
-
-
0.2
mA
Operating Current
Read
ICC4
Standby Current
ISB
-
-
-
-
0.6
1.0
Vcc1=1.8V , fSCK=2MHz, SO=OPEN
SCK Fall Time
*1
tFC
-
-
1
-
-
1
μs
Read,Read Status Register
Output Rise Time
*1
tRO
-
-
50
-
-
50
ns
Vcc1=2.5V , fSCK=5MHz, SO=OPEN
Output Fall Time
*1
tFO
-
-
50
-
-
50
ns
Read,Read Status Register
Write Cycle Time
tE/W
-
-
5
-
-
5
ms
tON
15
-
-
15
-
-
ms
mA
μA Vcc1=3.6V, CSB=SCK=SI=Vcc1/GND,SO=OPEN
Wait Time From Vcc1 on To
EEPROM Command
*1 Not 100% TESTED
◇ LDO REGULATOR AC OPERATING CHARACTERISTICS
◇ LDO REGULATOR DC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-30~85℃, Vcc2=2.9~3.6V)
Parameter
Symbol
Specification
Min.
Typ.
Max.
Unit
(Ta=-30~85℃)
Test condition
Parameter
Output Voltage1-1
VOUT1-1
2.9
3.0
3.2
V 3.2V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:1]
Vcc1 Rise Time
Output Voltage1-2
VOUT1-2
2.9
3.0
3.1
V 3.2V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:1]
LDOEN Wait Time
Output Voltage2-1
VOUT2-1
2.8
2.9
3.1
V 3.1V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:0]
Output Voltage2-2
VOUT2-2
2.8
2.9
3.0
V 3.1V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:0]
Output Voltage3-1
VOUT3-1
2.7
2.8
3.0
V 3.0V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:1]
Output Voltage3-2
VOUT3-2
2.7
2.8
2.9
V 3.0V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:1]
Output Voltage4-1
VOUT4-1
2.6
2.7
2.9
V 2.9V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:0]
Output Voltage4-2
VOUT4-2
2.6
2.7
2.8
Operating Current
Icc
-
-
200
μA Vcc2=3.6V, IOUT=0A
μA Vcc2=3.6V, IOUT=0A, LDOEN=GND
V 2.9V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:0]
Standby Current
ISB
-
-
1.0
"H"Input Voltage
VIH
1.4
-
Vcc2+0.3
V
2.9V≦Vcc2≦3.6V
"L"Input Voltage
VIL
-0.3Vcc2
-
0.6
V
2.9V≦Vcc2≦3.6V
○This product is not designed for protection against radioactive rays.
◇ PIN No. / PIN NAME
2.9V≦Vcc≦3.6V
Symbol
Min.
Typ.
Max.
Unit
Test condition
tVcc1
-
-
5
msec Vcc1x0%→Vcc1x95%point
tLDOEN
15
-
-
msec Vcc1x0%point→LDOEN=High
◇ BLOCK DIAGRAM
VOLTAGE
INSTRUCTION
DECODE
CSB
DETECTION
CONTROL CLOCK
SCK
WRITE
HIGH VOLTAGE
INHIBITION
GENERATOR
INSTRUCTION
SI
REGISTER
PIN No. PIN NAME
A1
Vcc1
A2
CSB
A3
SCK
B1
Vcc2
B2
SI
B3
SO
C1
VOUT
C2
GND
LDOEN
C3
ADDRESS
REGISTER
11bit
SO
VOUT
AMP +
-
11bit
DECODER
16,384 bit
EEPROM
R/W
DATA
REGIST
ADDRESS
8bit
B.R
AMP
8bit
LDOEN
VOUT SETTING REGISTER
RESISTOR
Fig.1 BLOCK DIAGRAM
REV. A
2bit
3/4
◇ Input Power Supply Regulation Timing
①Using EEPROM PART
In case of using EEPROM part, be sure to raise Vcc1 up to operating voltage. In this time,
Vcc2 has no connection with operating.
Vcc1
Vcc1
EEPROM
EEPROM部電源
Power
Supply
Vcc2
Vcc2
LDOLDOレギュレータ部電源
regulator
Not
Power Supply
動作不可
Operating
EEPROM動作可能範囲
Operating
Not
動作不可
EEPROM動作可能範囲
Operating
Operating
Not
動作不可
Operating
Fig.4 Using EEPROM Part, Regulation Timing
②Using LDO REGULATOR PART
In case of using LDO regulator part, be sure to raise Vcc1 and Vcc2 up to operating voltage.
After rising Vcc1, wait 15msec and rising LDOEN. When LDOEN is raised, Vcc1 must be operating voltage.
tVcc1:MAX5msec
tVcc1:MAX5msec
Vcc1
EEPROM Power Supply
Vcc2
LDO regulator Power
Supply
tLDOEN:MIN15msec
tLDOEN:MIN15msec
LDOEN
Not Operating
Operating
Not operating
Operating
Not Operating
Fig.5 Using LDO REGULATOR Part, Regulation Timing
◇ I/O APPLICATION CIRCUIT
Pull up resistor is indispensable condition.
When CSB is "H" during power ON/OFF, error operating and writing is protected.
○PULL UP RESISTOR OF CSB PIN
The pull up resistor is needed in order to prevent error operating and writing from happening.
Decide the value of this resistor (Rup) properly, considering VOH, IOH characteristics of controller.
IOLM
μーCOM
VOLM
“L” OUTPUT
EEPROM
VILE
“L” INPUT
Fig.3 PULL UP RESISTOR OF CSB
PIN
・VILE:VIL specification of EEPROM
・VOLM:VOL specification of CONTROLLER
・IOLM:IOL specification of CONTROLLER
VCC-VOLM
・・・①
IOLM
・・・②
VILE ≧
VOLM
Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V,
IOLM=2mA, according to ①,
5-0.4
Rpu ≧
2×10-3
∴
Rpu ≧
2.5[kΩ]
Rpu ≧
If the Rpu is under the conditions of the equation ①,
VOLM is 0.4V or more.
If the Rpu is under the conditions of the equation ②,
VILE(=1.5V) is VOLM or less.
◇CAUTIONS ON USE
(1) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case
of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it
that conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(2) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than
that of GND terminal.
(3) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
(4) Terminal to terminal shortcircuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging
may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal
and GND owing to foreign matter, LSI may be destructed.
(5) Strong electromagnetic field
Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently.
REV. A
4/4
◇PHYSICAL DIMENSION
9829
Lot.No
Fig.4 PHYSICAL DIMENSION VCSP50L1 (BU9829GUL-W)
REV. A
Notice
Notes
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