NPN BD239 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD240, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage (RBE = 100 Ω) VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PT TJ TS Value BD239 BD239A BD239B BD239C BD239 BD239A BD239B BD239C BD239 BD239A BD239B BD239C IC ICM @ Tamb = 25° C @ Tcase = 25° C Power Dissipation Junction Temperature Storage Temperature 45 60 80 100 55 70 90 115 45 60 80 100 5.0 3 7 0.5 30 30 150 -65 to +150 Unit V V V V A A W W °C THERMAL CHARACTERISTICS Symbol RthJ-amb RthJ-case Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case 22/10/2012 COMSET SEMICONDUCTORS Value Unit 70 4.17 °C/W °C/W 1/3 NPN BD239 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO IEBO ICES VCEO(sus) hFE VCE(SAT) VBE(on) hfe fT Ratings Test Condition(s) Min Typ - - VCE=30 V VCE=30 V VCE=60 V VCE=60 V BD239 BD239A Collector Cutoff Current BD239B BD239C BD239 BD239A Emitter Cutoff Current VBE=5 V BD239B BD239C BD239 VCE=45 V VCE=60 V BD239A Collector Cutoff Current (VBE = 0) VCE=80 V BD239B VCE=100 V BD239C BD239 Collector-Emitter BD239A Sustaining Voltage (IB = 0) IC =30mA BD239B (*) BD239C BD239 BD239A VCE=4 V IC=0.2 A BD239B BD239C DC Current Gain (*) BD239 BD239A VCE=4 V IC=1 A BD239B BD239C BD239 Collector-Emitter saturation IC=1 A BD239A Voltage (*) IB=200 mA BD239B BD239C BD239 BD239A VCE=4 V Base-Emitter Voltage (*) IC=1 A BD239B BD239C BD239 VCE=10 V BD239A IC=0.2 A BD239B f = 1KHz BD239C Small Signal Current Gain BD239 VCE=10 V BD239A IC=0.2 A BD239B f = 1MHz BD239C Transistor frequency VCE=10 V, IC=0.2 A, f = 1MHz Max Unit 0.3 mA 1.0 mA 0.2 mA 45 60 80 100 40 V - - 15 - - - - 0.6 V - - 1.3 V - - 20 3 - - - 3 - - MHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 22/10/2012 COMSET SEMICONDUCTORS 2/3 NPN BD239 – A – B – C MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Case : 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 22/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3