Infineon AUIRLS3036-7P Automotive grade Datasheet

AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 Logic Level Gate Drive
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
Package Type
AUIRLS3036-7P
D2Pak 7 Pin
60V
RDS(on) typ.
max.
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base Part Number
AUIRLS3036-7P
1.5m
ID (Silicon Limited)
1.9m
300A
ID (Package Limited)
240A
D2Pak 7 Pin
AUIRLS3036-7P
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLS3036-7P
AUIRLS3036-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
210
240
IDM
PD @TC = 25°C
Pulsed Drain Current 
Maximum Power Dissipation
1000
380
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case 
Junction-to-Ambient 
Units
300
A
W
2.5
± 16
300
See Fig.14,15, 22a, 22b
8.1
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRLS3036-7P
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
RG
Forward Trans conductance
Gate Resistance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
60
––– –––
V VGS = 0V, ID = 250µA
––– 0.059 ––– V/°C Reference to 25°C, ID = 5mA 
–––
1.5
1.9
VGS = 10V, ID = 180A 
m
–––
1.7
2.2
VGS = 4.5V, ID = 150A 
1.0
–––
2.5
V VDS = VGS, ID = 250µA
390
–––
–––
–––
–––
–––
–––
1.9
–––
–––
–––
–––
–––
–––
20
250
100
-100
S VDS = 10V, ID = 180A

VDS = 60V, VGS = 0V
µA
VDS = 60V,VGS = 0V,TJ =125°C
VGS = 16V
nA
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 110 160
–––
33
–––
–––
53
–––
–––
57
–––
–––
81
–––
––– 540 –––
–––
89
–––
––– 170 –––
––– 11270 –––
––– 1025 –––
Crss
Reverse Transfer Capacitance
–––
520
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
1460
–––
VDD = 39V
ID = 180A
ns
RG= 2.1
VGS = 4.5V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
1630
–––
VGS = 0V, VDS = 0V to 48V
Min.
Typ. Max. Units
–––
––– 300
–––
–––
1000
–––
–––
–––
–––
–––
–––
–––
57
60
140
160
4.6
1.3
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 180A
VDS = 30V
nC
VGS = 4.5V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 180A,VGS = 0V 
TJ = 25°C
VDD = 51V
ns
TJ = 125°C
IF = 180A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.018mH, RG = 25, IAS = 180A, VGS =10V. Part not recommended for use above this value.
 ISD 180A, di/dt 1070A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
 R is measured at TJ approximately 90°C.
RJC value shown is at time zero.
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AUIRLS3036-7P
1000
1000
100
BOTTOM
10
1
2.7V
BOTTOM
100
2.7V
 60µs PULSE WIDTH
Tj = 175°C
 60µs PULSE WIDTH
Tj = 25°C
10
0.1
0.1
1
10
0.1
100
Fig. 1 Typical Output Characteristics
10
100
Fig. 2 Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
TJ = 175°C
100
TJ = 25°C
10
VDS = 25V
 60µs PULSE WIDTH
1
ID = 180A
VGS = 10V
2.0
1.5
1.0
0.5
2.0
3.0
4.0
5.0
-60 -40 -20
5
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 100 kHz
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
15000
Ciss
10000
5000
Coss
Crss
VDS = 48V
ID= 180A
VDS = 30V
4
3
2
1
0
0
1
20 40 60 80 100 120 140 160 180
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
20000
0
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
10
100
0
20
40
60
80
100
120
140
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRLS3036-7P
10000
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
TJ = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
1msec
LIMITED BY PACKAGE
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
0.1
VSD , Source-to-Drain Voltage (V)
LIMITED BY PACKAGE
ID , Drain Current (A)
250
200
150
100
50
ID = 5mA
70
60
50
-60 -40 -20
75
100
125
150
175
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
1200
EAS, Single Pulse Avalanche Energy (mJ)
4.0
3.0
Energy (µJ)
100
80
0
50
10
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
300
2.0
1.0
ID
22A
37A
BOTTOM 180A
TOP
1000
800
600
400
200
0
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
1
VDS , Drain-toSource Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
25
DC
70
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
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AUIRLS3036-7P
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
J
0.02
0.01
0.01
J
1
R2
R2
R3
R3
C
2
1
3
2
3
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R1
R1

Ri (°C/W)
I (sec)
0.103731
0.000184
0.196542
0.001587
0.098271
0.006721
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 180A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRLS3036-7P
24
ID = 1.0A
ID = 1.0mA
ID = 250µA
2.5
18
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
3.0
2.0
12
IF = 120A
VR = 51V
6
1.5
TJ = 125°C
TJ = 25°C
0
1.0
-75 -50 -25
0
25
50
75
100
100 125 150 175
200
300
500
600
700
800
900
dif / dt - (A / µs)
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
24
1000
800
QRR - (nC)
18
IRRM - (A)
400
12
IF = 180A
VR = 51V
6
400
IF = 120A
VR = 51V
200
TJ = 125°C
TJ = 25°C
0
600
TJ = 125°C
TJ = 25°C
0
100
200
300
400
500
600
700
800
900
100
200
dif / dt - (A / µs)
300
400
500
600
700
800
900
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
1000
QRR - (nC)
800
Fig. 19 - Typical Stored Charge vs. dif/dt
IF = 180A
VR = 51V
TJ = 125°C
TJ = 25°C
600
400
200
0
100
200
300
400
500
600
700
800
900
dif / dt - (A / µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRLS3036-7P
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRLS3036-7P
D2Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))
D2Pak - 7 Pin Part Marking Information
Part Number
AULS3036-7P
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLS3036-7P
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLS3036-7P
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
D2-Pak 7 Pin
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H3A (+/- 6000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
4/2/2014
11/4/2015
Comments






Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 8
Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
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