ISC BD705 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BD705
DESCRIPTION
·DC Current Gain : hFE = 40(Min.)@ IC= 0.5A
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 45V(Min.)
·Complement to Type BD706
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCES
Collector-Emitter Voltage VBE= 0
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
Rth j-a
Thermal Resistance, Junction to Ambient
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MAX
UNIT
1.67
℃/W
70
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BD705
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 4V
1.5
V
ICEO
Collector Cutoff Current
VCE= 22V; IB= 0
1.0
mA
ICBO
Collector Cutoff Current
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150℃
0.1
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
40
hFE-2
DC Current Gain
IC= 2A; VCE= 2V
30
hFE-3
DC Current Gain
IC= 4A; VCE= 4V
20
hFE-4
DC Current Gain
IC= 10A; VCE= 4V
5
Current-Gain—Bandwidth Product
IC= 0.3A; VCE= 3V
3
fT
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CONDITIONS
MIN
45
B
B
2
MAX
UNIT
V
400
150
MHz
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