Vishay BYWE29-200 Ultrafast rectifier Datasheet

BYWE29-50, BYWE29-100, BYWE29-150, BYWE29-200
www.vishay.com
Vishay General Semiconductor
Ultrafast Rectifier
FEATURES
• Power pack
TO-220AC
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
BYWE29-xxx
PIN 1
PIN 2
TYPICAL APPLICATIONS
CASE
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
8.0 A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
100 A
trr
25 ns
VF
0.8 V
TJ max.
150 °C
Package
TO-220AC
Diode variations
Single die
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYWE29-50
BYWE29-100
BYWE29-150
BYWE29-200
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current
at TC = 105 °C
IF(AV)
8.0
A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
IFSM
100
A
TJ, TSTG
-65 to +150
°C
Operating and storage temperature range
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
TEST CONDITIONS
IF = 20 A
TJ = 25 °C
IF = 8.0 A
TJ = 150 °C
TC = 25 °C
TC = 100 °C
SYMBOL BYWE29-50 BYWE29-100 BYWE29-150 BYWE29-200
VF (1)
IR
1.3
0.8
10
500
UNIT
V
μA
Maximum reverse recovery
time
IF = 1 A, VR = 30 V,
dI/dt = 100 A/μs, 
Irr = 10 % IRM
trr
25
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
45
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 23-Feb-16
Document Number: 87922
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYWE29-50, BYWE29-100, BYWE29-150, BYWE29-200
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYWE29-50 BYWE29-100 BYWE29-150 BYWE29-200
Typical thermal resistance from junction to case per leg
RJC
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AC
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.80
45
50/tube
Tube
BYWE29-200-E3/45
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
10
Resistive or Inductive Load
8
6
4
2
25
50
75
100
125
150
0.1
0.6
0.8
1.0
1.2
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Charateristics
100
Instantaneous Reverse Leakage
Current (μA)
100
Peak Forward Surge Current (A)
1
0.01
0.4
0
0
10
80
60
40
20
0
TJ = 125 °C
TJ = 100 °C
10
1
0.1
TJ = 25 °C
0.01
1
10
100
0
20
40
60
80
100
Number of Cycles at 50 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Leakage Charateristics
Revision: 23-Feb-16
Document Number: 87922
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYWE29-50, BYWE29-100, BYWE29-150, BYWE29-200
www.vishay.com
Vishay General Semiconductor
Junction Capacitance (pF)
80
70
60
50
40
30
20
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
0.185 (4.70)
0.175 (4.44)
0.415 (10.54) MAX.
0.159 (4.04) DIA.
0.143 (3.64) DIA.
0.113 (2.87)
0.103 (2.62)
0.055 (1.39)
0.045 (1.14)
0.260 (6.6)
0.236 (6.0)
0.603 (15.32)
0.573 (14.55)
1
2
0.160 (4.06)
0.140 (3.56)
0.060 (1.50)
0.047 (1.20)
0.560 (14.22)
0.530 (13.46)
PIN 1
0.040 (0.84)
0.024 (0.62)
PIN 2
0.20 (5.08)
CASE
0.022 (0.56)
0.014 (0.36)
Revision: 23-Feb-16
Document Number: 87922
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16
1
Document Number: 91000
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