DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance 25mΩ @ VGS = 4.5V 29mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D D G Gate Protection Diode S G S ESD PROTECTED TO 2kV Internal Schematic Top View Top View Ordering Information (Note 5) Part Number Compliance Case Packaging DMG6968U-7 Standard Automotive SOT23 3000/Tape & Reel SOT23 3000/Tape & Reel DMG6968UQ-7 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 2N4 Date Code Key Year Code Month Code YM Marking Information 2N4 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M = Month (ex: 9 = September) 2009 W …. ….. 2017 E 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMG6968U Document number: DS31738 Rev. 7 - 2 1 of 6 www.diodes.com November 2017 © Diodes Incorporated DMG6968U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 6.5 5.2 A IDM 30 A Symbol Value Unit PD 1.3 W RθJA 157 °C/W TJ, TSTG -55 to +150 °C Steady State Continuous Drain Current (Note 6) TA = +25°C TA = +70°C Pulsed Drain Current Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @ TA = +25°C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Breakdown Voltage TJ = +25°C Symbol Min Typ Max Unit Test Condition BVDSS 20 V VGS = 0V, ID = 250µA IDSS 1.0 µA VDS = 20V, VGS = 0V IGSS ±10 µA VGS = 10V, VDS = 0V BVSGS ±12 — — V VDS = 0V, IG = 250µA VGS(TH) 0.5 V VDS = VGS, ID = 250µA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) 0.9 21 25 23 29 28 36 VGS = 4.5V, ID = 6.5A mΩ VGS = 1.8V, ID = 3.5A |Yfs| 8 S Input Capacitance Ciss 151 pF Output Capacitance Coss 91 pF Reverse Transfer Capacitance Crss 32 pF Total Gate Charge Qg 8.5 nC Gate-Source Charge Qgs 1.6 nC Gate-Drain Charge Qgd 2.8 nC tD(ON) 54 ns Turn-On Rise Time tR 66 ns Turn-Off Delay Time tD(OFF) 613 ns tF 205 ns Forward Transfer Admittance VGS = 2.5V, ID = 5.5A VDS = 10V, ID = 5A DYNAMIC CHARACTERISTICS (Note 8) Turn-On Delay Time Turn-Off Fall Time Notes: VDS = 10V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10, RG = 6, ID = 1A 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG6968U Document number: DS31738 Rev. 7 - 2 2 of 6 www.diodes.com November 2017 © Diodes Incorporated DMG6968U 20 20 VGS = 10V VGS = 4.5V 16 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 3.0V )A ( T N E 12 R R U C N 8 IA R D ,D I 4 VGS = 2.5V VGS = 2.0V 12 VGS = 1.5V 8 4 TA = 150°C T A = 125°C TA = 85°C TA = 25°C 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.04 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = 1.8V 0.03 VGS = 2.5V VGS = 4.5V 0.02 1 1.5 VGS , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 0.06 VGS = 4.5V 0.05 0.04 TA = 150°C TA = 125°C 0.03 TA = 85°C TA = 25°C 0.02 TA = -55°C 0.01 O (S D R 0.01 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0 30 4 8 12 16 ID, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 0.06 VGS = 2.5V ID = 5.5A 1.4 0.05 R , DRAIN-SOURCE RDSON , DRAIN-SOURCE DS(ON) () ON-RESISTANCE( ON-RESISTANCE ) RDSON, DRAIN-SOURCE ON-RESISTANCE RDS(ON), DRAIN-SOURCE (NORMALIZED) ON-RESISTANCE (NORMALIZED) TA = -55°C 0 0.5 0 VGS = 4.5V ID = 6.5A 1.2 1.0 0.8 0.04 VGS = 2.5V ID = 5.5A 0.03 VGS = 4.5V ID = 6.5A 0.02 0.01 0.6 -50 -25 0 25 50 75 100 125 150 (°C)) TA, AMBIENT TEMPERATURE (癈 Fig. 5 On-Resistance Variation with Temperature DMG6968U Document number: DS31738 Rev. 7 - 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (° (癈 C)) Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com November 2017 © Diodes Incorporated DMG6968U 1.4 T ( S G 20 1.2 16 )A ( T N E R 12 R U C E C R 8 U O S ,S I 4 1.0 ID = 250µA 0.8 0.6 0.4 TA = 25°C IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) )V ( E G A T L O V D L O H S E R H T E T A G , )H ID = 1mA 0.2 V 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0 500 0.2 0.4 0.6 0.8 1 1.2 VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 100,000 450 f = 1MHz C, CAPACITANCE (pF) 350 300 250 200 Ciss 150 100 I Coss IDSS, LEAKAGE CURRENT (nA) )A 10,000 n ( T N E R R 1,000 U C E G A K 100 A E L ,S 400 S D TA = 150°C TA = 125°C TA = 85°C 10 TA = -55°C 50 Crss 0 0 TA = 25°C 1 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 2 4 6 8 10 12 14 16 18 20 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 162° 162癈C/W /W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.000001 0.00001 DMG6968U Document number: DS31738 Rev. 7 - 2 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 November 2017 © Diodes Incorporated DMG6968U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMG6968U Document number: DS31738 Rev. 7 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com November 2017 © Diodes Incorporated DMG6968U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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