PD - 9.1561A
IRF9952
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
S1
G1
S2
G2
N -C H A N N E L M O S F E T
1
8
2
7
3
6
4
5
N-Ch P-Ch
D1
D1
VDSS
D2
30V
-30V
D2
P -C H A N N E L M O S F E T
RDS(on) 0.10Ω 0.25Ω
T o p V iew
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
S O -8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Symbol
Maximum
P-Channel
Units
N-Channel
Drain-Source Voltage
Gate-Source Voltage
V DS
VGS
TA = 25°C
TA = 70°C
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
ID
IDM
IS
30
± 20
3.5
2.8
16
1.7
-2.3
-1.8
-10
-1.3
2.0
1.3
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
V
44
2.0
A
W
57
-1.3
0.25
mJ
A
mJ
V/ ns
5.0
-5.0
-55 to + 150 °C
Symbol
Limit
Units
RθJA
62.5
°C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
8/25/97
IRF9952
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Min.
30
-30
—
—
—
—
—
—
1.0
-1.0
—
—
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ. Max.
—
—
—
—
0.015 —
0.015 —
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
—
—
—
—
12
—
2.4
—
— 2.0
— -2.0
—
25
— -25
— ±100
6.9 14
6.1 12
1.0 2.0
1.7 3.4
1.8 3.5
1.1 2.2
6.2 12
9.7 19
8.8 18
14
28
13
26
20
40
3.0 6.0
6.9 14
190 —
190 —
120 —
110 —
61
—
54
—
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
VGS = 0V, I D = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.2A
VGS = 4.5V, ID = 1.0A
VGS = -10V, ID = -1.0A
VGS = -4.5V, I D = -0.50A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 3.5A
VDS = -15V, ID = -2.3A
VDS = 24V, V GS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ±20V
N-Channel
ID = 1.8A, VDS = 10V, VGS = 10V
nC
P-Channel
ID = -2.3A, VDS = -10V, VGS = -10V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10Ω
ns
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0Ω,
RD = 10Ω
N-Channel
V GS = 0V, VDS = 15V, ƒ = 1.0MHz
pF
P-Channel
V GS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
—
1.7
—
— -1.3
A
—
—
16
—
—
16
— 0.82 1.2
T J = 25°C, IS = 1.25A, VGS = 0V
V
— -0.82 -1.2
TJ = 25°C, IS = -1.25A, V GS = 0V
—
27
53
N-Channel
ns
—
27
54
T J = 25°C, IF =1.25A, di/dt = 100A/µs
—
28
57
P-Channel
nC
—
31
62
T J = 25°C, IF = -1.25A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 23 )
Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.
IRF9952
N-Channel
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
TOP
I D , Dra in-to -S o u rce Cu rre n t (A)
I D , Dra in-to -S o u rce Cu rre n t (A )
TOP
10
3.0V
20 µs P U LSE W IDTH
TJ = 25 °C
A
1
0.1
1
10
3 .0V
20 µs P U LSE W IDTH
TJ = 15 0°C
A
1
10
0.1
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
Fig 2. Typical Output Characteristics
100
I S D , R e v e rse D ra in C u rre n t (A )
100
I D , D r ain- to-S ourc e C urre nt (A )
1
V D S , D rain-to-S ource Voltage (V)
T J = 2 5 °C
10
T J = 1 5 0 °C
VD S = 1 0 V
2 0 µ s PU L SE W ID TH
1
3.0
3.5
4.0
4.5
5.0
5.5
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
6.0
A
10
T J = 1 50 °C
T J = 2 5°C
1
VG S = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
V S D , Source-to-D rain V oltage (V )
Fig 4. Typical Source-Drain Diode
Forward Voltage
A
1.4
IRF9952
RDS (on) , Drain-to-Source On Resistance (Ω)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
N-Channel
I D = 2.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.12
0.10
0.08
V G S = 10V
0.06
0.04
80 100 120 140 160
A
0
TJ , Junction Temperature ( °C)
2
4
6
8
10
Fig 6. Typical On-Resistance Vs. Drain
Current
100
0.16
TOP
E A S , Single Pulse Avalanche Energy (mJ)
0.14
0.12
0.10
0.08
I D = 3 .5A
0.06
0.04
0.02
0.00
A
0
3
6
9
12
V G S , G ate -to-S ource V oltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
12
I D , D rain C ur rent (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
V G S = 4.5V
15
BOTTOM
80
I D
0.89A
1.6A
2.0A
60
40
20
A
0
25
50
75
100
125
150
Starting T ,JJunction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
IRF9952
N-Channel
V GS
C is s
C rs s
C o ss
C , C a p a c ita n c e (p F )
300
250
20
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
VGS , Gate-to-Source Voltage (V)
350
C is s
C os s
200
150
C rss
100
50
0
A
1
10
100
ID = 1.8A
VDS = 10V
16
12
8
4
0
0
2
4
6
8
10
Q G , Total Gate Charge (nC)
V D S , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF9952
100
P-Channel
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
-I D , D ra in -to -S o u rc e C u rre n t (A )
-I D , D ra in -to -S o u rc e C u rre n t (A )
TOP
10
1
-3.0 V
20 µs P U LSE W IDTH
TJ = 25 °C
A
0.1
0.1
1
10
1
-3 .0V
20 µs P U LSE W IDTH
TJ = 15 0°C
A
0.1
10
0.1
-VD S , D rain-to-S ource V oltage (V )
Fig 12. Typical Output Characteristics
10
Fig 13. Typical Output Characteristics
100
100
-I S D , R e ve rs e D ra in C u rre n t (A )
- I D , D ra in-t o-S o urc e C urre nt (A )
1
-VD S , D rain-to-S ource V oltage (V )
10
TJ = 2 5 ° C
T J = 1 5 0 °C
1
V DS = -1 0 V
2 0 µ s P U L S E W ID T H
0.1
3.0
4.0
5.0
6.0
7.0
8.0
-VG S , Ga te-to-S o urce V oltage (V )
Fig 14. Typical Transfer Characteristics
A
10
T J = 15 0°C
TJ = 2 5°C
1
VG S = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
-VS D , S ource-to-Drain V oltage (V )
Fig 15. Typical Source-Drain Diode
Forward Voltage
A
1.4
IRF9952
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS(on) , Drain-to-Source On Resistance ( Ω )
P-Channel
ID = -1.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
2.5
2.0
1.5
V G S = -4.5V
1.0
0.5
V G S = -10V
0.0
80 100 120 140 160
1.0
2.0
3.0
150
EAS , Single Pulse Avalanche Energy (mJ)
0.60
0.40
I D = -2.3A
0.20
0.00
A
3
-V G S
6
9
12
, G ate -to-S ource V oltage ( V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
5.0
Fig 17. Typical On-Resistance Vs. Drain
Current
0.80
0
4.0
-I D , D rain C urrent (A )
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
A
0.0
TJ , Junction Temperature ( ° C)
15
ID
-0.58A
-1.0A
BOTTOM -1.3A
TOP
120
90
60
30
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
IRF9952
V GS
C iss
C rs s
C os s
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds S H OR TED
Cgd
C ds + C gd
300
C iss
C os s
200
C rs s
100
0
1
10
ID = -2.3A
VDS = -10V
-V GS, Gate-to-Source Voltage (V)
C , C a p a c ita n c e (p F )
400
P-Channel
100
A
16
12
8
4
0
0
2
4
6
8
10
Q G, Total Gate Charge (nC)
-VD S , Drain-to-Source V oltage (V)
Fig 20. Typical Capacitance
Vs.
Drain-to-Source Voltage
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
(Z thJA )
100
0.50
0.20
10
Thermal Response
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF9952
Package Outline
SO8 Outline
IN C H E S
D IM
D
-B-
5
8
E
-A-
1
7
2
3
5
H
0.25 (.01 0)
4
e
6X
M
A M
θ
e1
K x 45°
θ
A
-C -
0.10 (.0 04)
A1
B 8X
0.2 5 (.01 0)
M AX
M IN
M AX
A
.0 5 3 2
.0 6 8 8
1 .3 5
1 .7 5
A1
.0 0 4 0
.0 0 9 8
0 .1 0
0 .2 5
B
.0 1 4
.0 1 8
0 .3 6
0 .4 6
C
.0 0 7 5
.0 0 9 8
0 .1 9
0 .2 5
D
.1 8 9
.1 9 6
4 .8 0
4 .9 8
E
.1 5 0
.1 5 7
3 .8 1
3 .9 9
5
6
L
8X
6
C
8X
M C A S B S
M IL L IM E T E R S
M IN
e
.0 5 0 B A S IC
1 .2 7 B A S IC
e1
.0 2 5 B A S IC
0 .6 3 5 B A S IC
H
.2 2 8 4
.2 4 4 0
K
.0 1 1
.0 1 9
0 .2 8
5 .8 0
0 .4 8
6 .2 0
L
0 .1 6
.050
0 .4 1
1 .2 7
θ
0°
8°
0°
8°
RE CO M ME NDE D FO O TP RINT
N O TE S :
1. DIM ENS IO NIN G A ND TOL ERA NC ING PE R A N SI Y14 .5M -1982 .
2. CO NTRO LLIN G DIM E NSIO N : INC H.
3. DIM ENS IO NS ARE SH OW N IN MILLIME TE RS (IN CHE S) .
4. OU TL INE CO N FO RMS TO JE DE C O U TLINE M S-0 12A A.
5 DIM EN SION DO E S NO T IN CLU DE MO L D P RO TRUS IO NS
MO LD P RO TRUS IO NS N O T TO EX CEE D 0.25 (.006).
6 DIM EN SION S IS THE LE NG TH OF LE AD FO R SO L DER ING TO A SUB S TRA TE ..
0 .72 (.02 8 )
8X
6.46 ( .25 5 )
1.78 ( .070 )
8X
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF9952
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E ED D IR E C T IO N
N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .
33 0. 00
(12 .99 2)
M A X.
1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97