AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 low threshold 20V, P-channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT8107 is designed for use as a load switch in battery-powered applications and protection in battery packs. • • • VDS(MAX) = -20V ID(MAX)1 = -6.5A @ 25°C Low RDS(ON): • 35mΩ @ VGS = -4.5V • 60mΩ @ VGS = -2.5V SOP-8L Package Applications • • TrenchDMOS™ Top View Battery Packs Battery-Powered Portable Equipment D D D D 8 7 6 5 Absolute Maximum Ratings 1 2 3 4 TA = 25°C, unless otherwise noted. S S S G Symbol VDS VGS Description Value Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C ID Continuous Drain Current @ TJ=150°C1 IDM IS Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 PD Maximum Power Dissipation1 TJ, TSTG TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Units -20 ±12 ±6.5 ±5.2 ±32 -1.7 2.5 1.6 -55 to 150 °C Value Units 80 50 27 °C/W V A W Thermal Characteristics Symbol RθJA RθJA2 RθJF Description 1 Typical Junction-to-Ambient Steady State Maximum Junction-to-Ambient t<10 Seconds1 Typical Junction-to-Foot1 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300µs. 8107.2005.05.1.1 1 AAT8107 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25°C, unless otherwise noted. Symbol Description Conditions Min DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA -20 RDS(ON) Drain-Source On-Resistance1 On-State Drain Current1 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage IDSS Current gfs Forward Transconductance1 Dynamic Characteristics2 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-On Delay tR Turn-On Rise Time tD(OFF) Turn-Off Delay tF Turn-Off Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage1 IS Continuous Diode Current3 ID(ON) VGS(th) IGSS VGS = -4.5V, ID = -6.5A VGS = -2.5V, ID = -5.0A VGS = -4.5V, VDS = 5V (Pulsed) VGS = VDS, ID = -250µA VGS = ±12V, VDS = 0V VGS = 0V, VDS = -20V VGS = 0V, VDS = -16V, TJ = 70°C VDS = -5V, ID = -6.5A VDS = -15V, RD = 2.3Ω, VGS = -4.5V VDS = -15V, RD = 2.3Ω, VGS = -4.5V VDS = -15V, RD = 2.3Ω, VGS = -4.5V VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω VGS = 0, IS = -6.5A Typ Max Units V 27 46 35 60 -32 -0.6 ±100 -1 -5 12 mΩ A V nA µA S 13.6 2.3 5.5 10 35 38 50 nC ns -1.5 V -1.7 A 1. Pulse test: Pulse Width = 300µs. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however, RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2 8107.2005.05.1.1 AAT8107 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Output Characteristics Transfer Characteristics 32 5V 4.5V 32 4V VD = VG 25°C 3.5V 24 125°C -55°C 24 ID (A) IDS (A) 3V 16 16 2.5V 2V 8 8 1.5V 0 0 0 0 1 2 3 1 2 4 VDS (V) On-Resistance vs. Drain Current 5 120 ID = 6.5A VGS = 2.5V 50 100 RDS(ON) (mΩ) 40 30 VGS = 4.5V 20 80 60 40 20 10 0 0 0 2 4 6 8 10 0 12 1 2 4 5 Threshold Voltage On-Resistance vs. Junction Temperature 0.5 1.4 VGS = 4.5V ID = 6.5A 0.4 VGS(th) Variance (V) 1.3 3 VGS (V) ID (A) Normalized RDS(ON) 4 On-Resistance vs. Gate-to-Source Voltage 60 RDS(ON) (mΩ) 3 VGS (V) 1.2 1.1 1.0 0.9 0.8 ID = 250µA 0.3 0.2 0.1 0 -0.1 -0.2 0.7 -0.3 -50 0.6 -50 -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150 TJ (°C) TJ (°C) 8107.2005.05.1.1 3 AAT8107 20V P-Channel Power MOSFET Typical Characteristics TJ = 25ºC, unless otherwise noted. Gate Charge 5 100 VD = 15V ID = 6.5A 4 TJ = 150°C 10 3 IS (A) VGS (V) Source-Drain Diode Forward Voltage 2 TJ = 25°C 1 1 0 0 3 6 9 12 0.1 15 0 0.2 0.4 0.6 QG, Charge (nC) 1 1.2 Single Pulse Power, Junction to Ambient 2000 50 1600 40 Ciss Power (W) Capacitance (pF) Capacitance 1200 0.8 VSD (V) 800 Coss 30 20 10 400 Crss 0 0.001 0 0 5 10 15 20 0.01 0.1 1 10 100 Time (s) VDS (V) Transient Thermal Response, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1E-04 Single Pulse 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 Time (s) 4 8107.2005.05.1.1 AAT8107 20V P-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel)1 SOP-8 8107 AAT8107IAS-T1 Package Information 3.90 ± 0.10 6.00 ± 0.20 SOP-8 4.90 ± 0.10 0.42 ± 0.09 × 8 1.27 BSC 45° 4° ± 4° 0.175 ± 0.075 1.55 ± 0.20 0.375 ± 0.125 0.235 ± 0.045 0.825 ± 0.445 All dimensions in millimeters. 1. Sample stock is generally held on all part numbers listed in BOLD. 8107.2005.05.1.1 5 AAT8107 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 8107.2005.05.1.1