Hittite HMC758LP3 Gaas smt phemt low noise amplifier, 700 - 2200 mhz Datasheet

HMC758LP3 / 758LP3E
v00.1108
LOW NOISE AMPLIFIERS - SMT
8
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Typical Applications
Features
The HMC758LP3(E) is ideal for:
Noise Figure: 1.7 dB
• Cellular Infrastructure, WiMAX & LTE/4G
Gain: 22 dB
• Software Defined Radios
Output IP3: +37 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Access Points
50 Ohm Matched Input/Output
• Test & Measurement Equipment
16 Lead 3x3 mm SMT Package: 9 mm2
Functional Diagram
General Description
The HMC758LP3(E) is a GaAs PHEMT MMIC Low
Noise Amplifier that is ideal for Cellular Infrastructure,
WiMAX & LTE/4G basestation front-end receivers
operating between 700 and 2200 MHz. The amplifier
has been optimized to provide 1.7 dB noise figure,
21 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC758LP3(E) can
be biased with +3V to +5V and features an externally
adjustable supply current, which allows the designer
to tailor the linearity performance of the LNA for
each application.
Electrical Specifi cations, TA = +25° C, R1= 390Ω, R2= 560Ω*
Vdd = +3V
Vdd = +5V
Parameter
Units
Min.
Frequency Range
Gain
Typ.
Max.
Min.
700 - 1700
19
Gain Variation Over Temperature
Typ.
Max.
Min.
1700 - 2200
21.8
16
0.005
Min.
20
18
dB
0.01
dB/ °C
1.6
15
13
14
14
dB
Output Return Loss
11
15
10
12
dB
24
dBm
18
18
20
20.5
2.6
MHz
21.3
Input Return Loss
16
1.7
Max.
1700 - 2200
22.7
0.004
1.8
Typ.
Noise Figure
Output Power for 1 dB
Compression (P1dB)
1.4
Max.
700 - 1700
19.4
0.01
2.5
Typ.
22.5
1.6
22
2.0
Saturated Output Power (Psat)
20
21.5
23.5
25
dBm
Output Third Order Intercept (IP3)
31
31.5
36
35
dBm
Supply Current (Idd)
80
102
130
80
102
130
190
227
260
190
227
260
* R1 & R2 resistors set current, see application circuit herein
8 - 342
dB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Broadband Gain & Return Loss
20
Vdd=5V
Vdd=3V
15
23
GAIN (dB)
10
5
S21
0
-5
21
+25C
+85C
-40C
19
-10
-15
17
S22
-20
S11
-25
0
1
2
3
4
FREQUENCY (GHz)
5
15
0.5
6
0.9
1.3
1.7
FREQUENCY (GHz)
2.5
2.1
2.5
2.1
2.5
Input Return Loss vs.
Temperature, Vdd = +5V
Gain vs. Temperature, Vdd = +3V
0
25
RETURN LOSS (dB)
23
GAIN (dB)
2.1
21
+25C
+85C
-40C
19
+25C
+85C
-40C
-5
-10
LOW NOISE AMPLIFIERS - SMT
25
25
RESPONSE (dB)
8
Gain vs. Temperature, Vdd = +5V
-15
17
15
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
-20
0.5
2.5
Output Return Loss vs.
Temperature, Vdd = +5V
0.9
1.3
1.7
FREQUENCY (GHz)
Reverse Isolation vs.
Temperature, Vdd = +5V
0
0
ISOLATION (dB)
RETURN LOSS (dB)
-10
+25C
+85C
-40C
-5
-10
+25C
+85C
-40C
-20
-30
-40
-15
-50
-20
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
-60
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 343
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
8
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
45
+85C
40
2
IP3 (dBm)
NOISE FIGURE (dB)
Vdd=5V
Vdd=5V
Vdd=3V
2.5
1.5
+25C
30
-40C
+25C
+85C
-40C
25
0.5
0
0.5
0.9
1.3
1.7
FREQUENCY (GHz)
2.1
20
0.5
2.5
Output IP3 and Supply Current vs.
Supply Voltage @ 900 MHz
0.9
Vdd=3V
1.3
1.7
FREQUENCY (GHz)
2.1
2.5
Output IP3 and Supply Current vs.
Supply Voltage @ 1900 MHz
45
250
40
35
200
35
200
30
150
30
150
40
IP3
Idd
20
2.7
3.1
3.5
3.9
4.3
4.7
5.1
100
25
50
20
2.7
5.5
300
Idd
100
50
3.1
3.5
Voltage Supply (V)
Output IP3 vs. Output Power @ 900 MHz
250
IP3
3.9
4.3
4.7
Voltage Supply (V)
5.1
5.5
Output IP3 vs. Output Power @ 1900 MHz
40
36
35
38
IP3 (dBm)
IP3 (dBm)
34
36
Vdd=3V
Vdd=5V
34
Vdd=3V
Vdd=5V
33
32
32
30
-10
31
-5
0
5
10
OUTPUT POWER (dBm)
30
-10
-5
0
5
OUTPUT POWER (dBm)
[1] Measurement reference plane shown on evaluation PCB drawing.
8 - 344
Idd (mA)
25
IP3 (dBm)
300
45
IP3 (dBm)
35
1
Idd (mA)
LOW NOISE AMPLIFIERS - SMT
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Power Compression @ 900 MHz [1]
20
15
10
5
Pout
Gain
PAE
0
-5
-20
-15
-10
-5
0
20
10
5
0
-5
-25
5
Pout
Gain
PAE
15
-20
INPUT POWER (dBm)
-15
-10
-5
0
INPUT POWER (dBm)
Power Compression @ 1900 MHz [1]
Power Compression @ 1900 MHz [2]
40
Pout (dBm), Gain (dB), PAE (%)
40
Pout
Gain
PAE
30
20
10
0
-10
-20
-15
-10
-5
0
INPUT POWER (dBm)
5
10
Pout
Gain
PAE
30
20
10
LOW NOISE AMPLIFIERS - SMT
25
Pout (dBm), Gain (dB), PAE (%)
Pout (dBm), Gain (dB), PAE (%)
25
Pout (dBm), Gain (dB), PAE (%)
8
Power Compression @ 900 MHz [2]
0
-10
-20
-15
-10
-5
0
INPUT POWER (dBm)
5
10
Typical Supply Current vs.
Vdd (R1 = 390Ω, R2 = 560Ω)
Recommended Bias
Resistor Values for Idd
Vdd (V)
R1 (ohms)
R2 (ohms)
Idd (mA)
Vdd (V)
Idd (mA)
3V
390
560
102
2.7
80
3V
1k
1.5k
85
3
102
3V
3.3k
4.7k
54
3.3
122
5V
390
560
227
4.5
200
5V
1k
1.5k
190
5
227
5V
3.3k
4.7k
124
5.5
255
Absolute Min/Max Bias Resistor Range
Max
Note: Amplifi er will operate over full voltage range shown above.
Min
R1 (ohms)
R2 (ohms)
R1 (ohms)
R2 (ohms)
3.9k
5.6k
270
470
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 345
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
LOW NOISE AMPLIFIERS - SMT
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6 V
RF Input Power (RFIN)
(Vdd = +5V)
+5 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 20 mW/°C above 85 °C)
1.3 W
Thermal Resistance
(channel to ground paddle)
50 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC758LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC758LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
758
XXXX
[2]
758
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
8 - 346
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Pin Number
Function
Description
1, 3 - 6,
7 - 10, 12, 14
N/C
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
2
RFIN
This pin is DC coupled. An off-chip DC
blocking capacitor is required.
11
RFOUT
This pin is DC coupled. An off-chip DC
blocking capacitor is required.
13
BIAS2
This pin is used to set the DC current of the second stage
amplifier by selection of external bias resistor. See
application circuit.
15
Vdd
Power Supply Voltage for the amplifier. Bypass capacitors are
required. See application circuit.
16
BIAS1
This pin is used to set the DC current of the first
stage amplifier by selection of external bias resistor.
See application circuit.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
8
Pin Descriptions
8 - 347
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
Application Circuit
LOW NOISE AMPLIFIERS - SMT
8
8 - 348
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC758LP3 / 758LP3E
v00.1108
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 700 - 2200 MHz
8
LOW NOISE AMPLIFIERS - SMT
Evaluation PCB
List of Material for Evaluation PCB 121703 [1]
Item
J1, J2
Description
PCB Mount SMA RF Connector
J3, J4
DC Pin
C1
220 pF Capacitor, 0402 Pkg.
C2
10 pF Capacitor, 0402 Pkg.
C3 - C5
10 nF Capacitor, 0603 Pkg.
C6
2.2 μF Tantalum Capacitor
R1
390 Ohm Resistor, 0402 Pkg.
R2
560 Ohm Resistor, 0402 Pkg.
U1
HMC758LP3(E) Amplifier
PCB [2]
121701 Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 349
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