DMT10H015LPS Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS(ON) Max ID TC = +25°C 16mΩ @ VGS = 10V 44A 18mΩ @ VGS = 6.0V 41A V(BR)DSS ADVANCED INFORMATION Features 100V Thermally Efficient Package – Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching Mechanical Data performance. This device is ideal for use in notebook battery power management and loadswitch. Case: POWERDI 5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) Applications Motor Control DC-DC Converters Power Management ® POWERDI®5060-8 D Pin1 G S D S D S D G D S Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number DMT10H015LPS-13 Notes: Case ® POWERDI 5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information D D D D =Manufacturer’s Marking T1015LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 to 53) T1015LS YY WW S S S G POWERDI is a registered trademark of Diodes Incorporated. DMT10H015LPS Document number: DS38019 Rev. 4 - 2 1 of 7 www.diodes.com December 2015 © Diodes Incorporated DMT10H015LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State ADVANCED INFORMATION Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C TC = +25°C TC = +100°C Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Avalanche Current (Note 7) L=3mH Avalanche Energy (Note 7) L=3mH ID Value 100 ±20 7.3 5.8 ID 44 28 IDM IS IAS EAS 1.5 7.5 85 Unit V V A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA PD RθJC TJ, TSTG TA = +25°C TC = +25°C Value Unit W °C/W W °C/W °C -55 to +150 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD 2.0 14 15 17 0.9 3.0 16 18 25 1.3 V Static Drain-Source On-Resistance 1.4 — — — — VDS = VGS, ID = 250 A VGS = 10V, ID = 20A VGS = 6.0V, ID = 20A VGS = 4.5V, ID = 5A VGS = 0V, IS = 20A CISS COSS CRSS RG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 1,871 261 6.9 0.75 33.3 6.9 5.1 6.5 7.0 19.7 8.1 37.9 51.9 — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 10A, VGS = 10V ns VDD = 50V, VGS = 10V, ID = 10A, RG = 6Ω ns nC IF = 10A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMT10H015LPS Document number: DS38019 Rev. 4 - 2 2 of 7 www.diodes.com December 2015 © Diodes Incorporated DMT10H015LPS 30 30 VGS = 10.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 5.0V 20 VGS = 4.5V 15 VGS = 4.0V 10 VDS = 5.0V 25 VGS = 6.0V VGS = 3.5V 20 15 T A = 150C 10 T A = 125 C TA = 85 C T A = 25 C 5 5 T A = -55 C VGS = 3.0V 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 1.5 3 0.025 0.02 VGS = 4.5V VGS = 6V 0.015 VGS = 10V 0.01 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.005 0.05 0.04 0.03 ID = 5A ID = 20A 0.02 0.01 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.03 5 10 15 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 1.8 VGS = 10V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE () ADVANCED INFORMATION 25 TA = 150 C 0.025 TA = 125C 0.02 TA = 85 C 0.015 T A = 25 C 0.01 T A = -55C 0.005 0 1.6 VGS = 6V, ID = 20A VGS = 10V, ID = 20A 1.4 1.2 VGS = 4.5V, ID = 5A 1 0.8 0.6 0 5 10 15 20 25 ID , DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Junction Temperature 30 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6 On-Resistance Variation with Junction Temperature POWERDI is a registered trademark of Diodes Incorporated. DMT10H015LPS Document number: DS38019 Rev. 4 - 2 3 of 7 www.diodes.com December 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.6 0.04 0.03 VGS = 4.5V, ID = 5A 0.02 VGS = 10V, ID = 20A 0.01 VGS = 6V, ID = 20A I D = 1mA 2.2 2 ID = 250µA 1.8 1.6 1.4 1.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7 On-Resistance Variation with Junction Temperature 10000 30 CT , JUNCTION CAPACITANCE (pF) 25 IS, SOURCE CURRENT (A) 2.4 1 0 -50 T A= 150 C 20 T A= 25C T A= 125 C 15 T A= 85C 10 T A= -55 C 5 Ciss 1000 C oss 100 10 Crss f = 1MHz 0 1 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 1.5 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 50 100 10 8 VDS = 50V 6 ID = 10A 4 ID, DRAIN CURRENT (A) RDS(on) Limited VGS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION DMT10H015LPS 2 10 1 0 5 10 15 20 25 30 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DC PW = 10s PW = 1s 0.1 0.01 0 PW = 100µs 0.001 0.1 PW = 100ms PW = 10ms PW = 1ms TJ (m ax ) = 150°C TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 1000 POWERDI is a registered trademark of Diodes Incorporated. DMT10H015LPS Document number: DS38019 Rev. 4 - 2 4 of 7 www.diodes.com December 2015 © Diodes Incorporated DMT10H015LPS r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * R JA Single Pulse RJA = 99°C/W Duty Cycle, D = t1/ t2 0.001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 10 100 1000 POWERDI is a registered trademark of Diodes Incorporated. DMT10H015LPS Document number: DS38019 Rev. 4 - 2 5 of 7 www.diodes.com December 2015 © Diodes Incorporated DMT10H015LPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ADVANCED INFORMATION POWERDI®5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10° 12° 11° Θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 Y(4x) POWERDI is a registered trademark of Diodes Incorporated. DMT10H015LPS Document number: DS38019 Rev. 4 - 2 6 of 7 www.diodes.com December 2015 © Diodes Incorporated DMT10H015LPS IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMT10H015LPS Document number: DS38019 Rev. 4 - 2 7 of 7 www.diodes.com December 2015 © Diodes Incorporated