ON NSBC114YDXV6T1 Dual bias resistor transistor Datasheet

NSBC114EDXV6T1,
NSBC114EDXV6T5
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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(3)
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.
(2)
R1
(1)
R2
Q1
Q2
R2
(4)
R1
(5)
(6)
NSBC114EDXV6T1
Features
•
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead−Free Solder Plating
These are Pb−Free Devices
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS
MARKING
DIAGRAM
SOT−563
CASE 463A
1
xx M G
1
xx = Device Code (Refer to Page 2)
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Device
Package
Shipping†
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
NSBC1xxxDXV6T1
SOT−563 4000/Tape & Reel
Collector-Emitter Voltage
VCEO
50
Vdc
NSBC1xxxDXV6T1G
SOT−563 4000/Tape & Reel
IC
100
mAdc
Rating
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
PD
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
RqJA
350 (Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
PD
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
RqJA
250 (Note 1)
°C/W
TJ, Tstg
−55 to +150
°C
Total Device Dissipation; TA = 25°C
Derate above 25°C
Total Device Dissipation; TA = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
Range
NSVBC1xxxDXV6T1G SOT−563 4000/Tape & Reel
NSBC1xxxDXV6T5
SOT−563 8000/Tape & Reel
NSBC1xxxDXV6T5G
SOT−563 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 7
1
Publication Order Number:
NSBC114EDXV6/D
NSBC114EDXV6T1, NSBC114EDXV6T5
DEVICE MARKING, ORDERING, AND RESISTOR VALUES
Device†
Package*
Marking
R1 (kW)
R2 (kW)
NSBC114EDXV6T1
SOT−563
7A
10
10
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
SOT−563
7B
22
22
NSBC144EDXV6T1
SOT−563
7C
47
47
NSBC114YDXV6T1
SOT−563
7D
10
47
NSBC114TDXV6T1 (Note 2)
SOT−563
7E
10
∞
NSBC143TDXV6T1 (Notes 2)
SOT−563
7F
4.7
∞
NSBC113EDXV6T1 (Note 2)
SOT−563
7G
1.0
1.0
NSBC123EDXV6T1 (Notes 2)
SOT−563
7H
2.2
2.2
NSBC143EDXV6T1 (Notes 2)
SOT−563
7J
4.7
4.7
NSBC143ZDXV6T1 (Notes 2)
SOT−563
7K
4.7
47
NSBC124XDXV6T1 (Notes 2)
SOT−563
7L
22
47
NSBC123JDXV6T1 (Note 2)
SOT−563
7M
2.2
47
NSBC115EDXV6T1 (Notes 2)
SOT−563
7N
100
100
NSBC144WDXV6T1 (Notes 2)
SOT−563
7P
47
22
†The “G’’ suffix indicates Pb−Free package available.
*This package is inherently Pb−Free.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
Characteristic
OFF CHARACTERISTICS
NSBC114EDXV6T1
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
NSBC114EDXV6T1, NSBC114EDXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
NSBC114EDXV6T1
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
NSBC113EDXV6T1/NSBC123EDXV6T1
(IC = 10 mA, IB = 5 mA)
NSBC114TDXV6T1/NSBC143TDXV6T1
(IC = 10 mA, IB = 1 mA)
NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
NSBC114EDXV6T1
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144EDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOL
Vdc
Vdc
NSBC113EDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC143ZDXV6T1
Input Resistor
NSBC114EDXV6T1
NSBC124EDXV6T1 / NSVBC124EDXV6T1G
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
Resistor Ratio
NSBC114EDXV6T1/NSBC124EDXV6T1/NSVBC124EDXV6T1G
NSBC144EDXV6T1/NSBC115EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144WDXV6T1
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
R1/R2
NSBC114EDXV6T1, NSBC114EDXV6T5
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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4
150
NSBC114EDXV6T1, NSBC114EDXV6T5
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
1
0.1
0.01
0.001
50
TA=-25°C
10
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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5
50
10
NSBC114EDXV6T1, NSBC114EDXV6T5
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC124EDXV6T1 / NSVBC124EDXV6T1G
IC/IB = 10
25°C
TA=-25°C
0.1
75°C
0.01
TA=75°C
25°C
-25°C
100
10
0.001
0
20
50
40
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3
2
1
75°C
25°C
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
VCE = 10 V
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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6
NSBC114EDXV6T1, NSBC114EDXV6T5
10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
VCE = 10 V
TA=75°C
25°C
-25°C
100
0.01
0
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
TA=-25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
Figure 14. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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7
NSBC114EDXV6T1, NSBC114EDXV6T5
300
1
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA=75°C
VCE = 10
250
25°C
200
-25°C
150
100
50
0
80
2
1
4
6
Figure 17. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
10
VO = 5 V
1
50
25°C
-25°C
0
Figure 19. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 21. Input Voltage versus Output Current
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8
50
10
NSBC114EDXV6T1, NSBC114EDXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
6
1
e
A
5
4
2
3
L
E
−Y−
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
HE
DIM
A
b
C
D
E
e
L
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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