Siemens BC857S Pnp silicon af transistor array (for af input stages and driver applications high current gain low collector-emitter saturation voltage) Datasheet

BC 857S
PNP Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
Type
Marking
Ordering Code
Pin Configuration
BC 857S
3Cs
Q62702-C2373
1/4=E1/E2
2/5=B1/B2
Package
3/6=C2/C1
SOT-363
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
45
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCES
50
Emitter-base voltage
VEBO
5
DC collector current
IC
100
Peak collector current
ICM
200
Total power dissipation, TS = 115 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
mA
- 65...+150
Thermal Resistance
Junction ambient 1)
RthJA
≤275
Junction - soldering point
RthJS
≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
1
May-12-1998
BC 857S
Electrical Characteristics at TA=25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
V(BR)CEO
45
-
-
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
-
-
IC = 10 µA, IB = 0
Collector-emitter breakdown voltage
V(BR)CES
50
-
-
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
-
-
15
nA
VCB = 30 V, IE = 0
Collector cutoff current
ICBO
-
-
5
µA
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
hFE
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
Collector-emitter saturation voltage1)
V
-
250
-
200
290
630
VCEsat
mV
IC = 10 mA, IB = 0.5 mA
-
75
300
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage 1)
-
250
650
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
Base-emitter voltage 1)
-
850
-
IC = 2 mA, VCE = 5 V
600
650
750
IC = 10 mA, VCE = 5 V
-
-
820
VBEsat
VBE(ON)
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
May-12-1998
BC 857S
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
10
-
h11e
-
4.5
-
kΩ
h12e
-
2
-
10-4
h21e
-
330
-
-
h22e
-
30
-
µS
AC Characteristics per Transistor
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transfer ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Semiconductor Group
3
May-12-1998
BC 857S
Total power dissipation Ptot = f (TA *;TS)
* Package mounted on epoxy
300
mW
TS
Ptot
200
TA
150
100
50
0
0
20
40
60
80
120 °C
100
150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10
3
10 3
K/W
-
10
2
Ptotmax
/ PtotDC
R thJS
10
10
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
0
10 1
-1
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
May-12-1998
BC 857S
Transition frequency fT = f (IC )
Collector-base capacität CCB = f (VCBO )
VCE = 5V
Emitter-base capacität CEB = f (VEBO )
Collector cutoff current ICBO = f (TA)
Collector-emitter saturation voltage
VCB = 30V
IC = f (VCEsat ), hFE = 20
Semiconductor Group
5
May-12-1998
BC 857S
DC current gain hFE = f (IC )
Base-emitter saturation voltage
VCE = 5V
IC = f (VBEsat ), hFE = 20
Semiconductor Group
6
May-12-1998
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