HED2150(NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : 2SD2150 FEATURES Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage Typically VCE(sat)=0.5V(max) for IC/IB=2A/0.1A SOT-89 MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Parameter Symbol Collector-Base Voltage 1:BASE Value Unit VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 3 A Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature Tstg -55~150 °C 2:COLLECTOR 3:EMITTER ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Collector-Base Breakdown Voltage VCBO IC=50μA,IE=0 40 V Collector-Emitter Breakdown Voltage VCEO IC=1mA,IB=0 20 V Emitter-Base Breakdown Voltage VEBO IE=50μA,IC=0 6 V Collector Cut-off Current ICBO VCB=30V,IE=0 0.1 uA Emitter Cut-off Current IEBO VEB=5V,IC=0 0.1 uA DC Current Gain hFE VCE=2V,IC=100mA Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=100mA Transition Frequency fT VCE=2V,IC=500mA,f=100MHz 290 MHz Output Capacitance COB VCB=10V,,IE=0A,f=1MHz 25 pF 180 Unit 560 0.5 V CLASSIFICATION OF hFE Rank Range Marking ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD R S 180-390 270-560 CFR CFS E-mail:[email protected] 1/ 4 HED2150(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics hFE Static Characteristic 200 1000 500uA 400uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 450uA 160 350uA 120 300uA 250uA 80 200uA 150uA 40 —— IC COMMON EMITTER VCE=2V COMMON EMITTER Ta=25℃ Ta=100℃ Ta=25℃ 100uA IB=50uA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VBEsat BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 1200 —— VCE 100 5 1 10 100 1000 COLLECTOR CURRENT (V) IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 0 1000 800 Ta=25℃ 600 Ta=100℃ 400 IC —— IC 100 Ta=100℃ Ta=25℃ 10 β=20 β=20 200 0.1 1 10 100 COLLECTOR CURRENT IC —— IC 1000 3000 (mA) 1 0.1 0.3 3000 1 10 100 COLLECTOR CURRENT (mA) VBE Cob/ Cib —— IC 1000 3000 (mA) VCB/ VEB 500 3000 VCE=2V f=1MHz IE=0/IC=0 1000 CAPACITANCE C (pF) COLLCETOR CURRENT IC (mA) Ta=25℃ Ta=100℃ 100 10 Ta=25℃ Cib 100 Cob 1 0.1 0 200 400 600 BASE-EMMITER VOLTAGE fT —— 10 0.1 1000 1 10 REVERSE VOLTAGE (mV) IC PC 600 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) 500 800 VBE 100 —— V 20 (V) Ta 500 400 300 200 100 VCE=2V Ta=25℃ 10 0 2 10 100 COLLECTOR CURRENT IC (mA) ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 0 25 50 75 AMBIENT TEMPERATURE E-mail:[email protected] 100 Ta 125 150 (℃ ) 2/ 4 HED2150(NPN) GENERAL PURPOSE TRANSISTOR SOT-89 Package Outline Dimensions Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF. 0.061REF. E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP. 0.060TYP. e1 3.000TYP. 0.118TYP. L 0.900 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 1.200 0.035 E-mail:[email protected] 0.047 3/ 4 HED2150(NPN) GENERAL PURPOSE TRANSISTOR SOT-89 Tape and Reel DIMENSIONSAREINMILLIMETER TYPE A B C SOT-89 4.85 4.45 1.85 TOLERANCE ±0.1 ±0.1 ±0.1 d 1.50 ±0.1 E F P0 P P1 W 1.75 5.50 4.00 8.00 2.00 12.00 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-89 Tape Leader and Trailer Leader Tape Components Empty pockets Empty pockets SOT-89 Reel DIMNSIONSAREINMILLIMETERE REELOPTION D 7’’ DIA 180 TOLERANCE ±2 D1 60.00 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD D2 R32.00 ±1 G R86.50 ±1 H R30.00 ±1 I 13.00 ±1 E-mail:[email protected] W1 W2 13.20 16.50 ±1 ±1 4/ 4