BUK7227-100B TrenchMOS™ standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features ■ Very low on-state resistance ■ 185 °C rated ■ Q101 compliant ■ Standard level compatible. 1.3 Applications ■ Automotive systems ■ Motors, lamps and solenoids ■ 12 V, 24 V and 42 V loads ■ General purpose power switching. 1.4 Quick reference data ■ EDS(AL)S ≤ 145 mJ ■ ID ≤ 48 A ■ RDSon = 23 mΩ (typ) ■ Ptot ≤ 167 W. 2. Pinning information Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb [1] g MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. s BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Type number Package BUK7227-100B Name Description Version D-PAK Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped). SOT428 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions Min Max Unit - 100 V - 100 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 - 48 A Tmb = 100 °C; VGS = 10 V; Figure 2 - 34 A - 196 A RGS = 20 kΩ IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Ptot total power dissipation - 167 W Tstg storage temperature −55 +185 °C Tj junction temperature −55 +185 °C Source-drain diode IDR reverse drain current (DC) Tmb = 25 °C - 48 A IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 196 A unclamped inductive load; ID = 48 A; VDS ≤ 100 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C - 145 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data Rev. 01 — 26 January 2004 2 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 03no96 120 Pder (%) 03nl33 50 ID (A) 40 80 30 20 40 10 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 03nl31 103 ID (A) Limit RDSon = VDS / ID 102 tp = 10 µ s 100 µ s 10 DC 1 ms 10 ms 100 ms 1 1 102 10 VDS (V) 103 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data Rev. 01 — 26 January 2004 3 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Min Typ Max Unit - 71.4 - K/W - - 0.95 K/W 5.1 Transient thermal impedance 03nk52 1 δ = 0.5 Zth(j-mb) (K/W) 10-1 0.2 0.1 0.05 0.02 10-2 δ= P single shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data Rev. 01 — 26 January 2004 4 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 100 - - V Tj = −55 °C 89 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 2 3 4 V Tj = 185 °C 0.9 - - V Tj = −55 °C - - 4.4 V Tj = 25 °C - 0.02 1 µA Tj = 185 °C - - 500 µA - 2 100 nA Tj = 25 °C - 23 27 mΩ Tj = 185 °C - - 70 mΩ - 37 - nC - 9 - nC - 13 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - 2092 2789 pF - 241 289 pF - 102 140 pF VDS = 25 V; RL = 1.0 Ω; VGS = 10 V; RG = 10 Ω - 18 - nS - 99 - nS - 50 - nS VDS = 100 V; VGS = 0 V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge VGS = 10 V; VDS = 80 V; ID = 25 A; Figure 14 Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time - 20 - nS Ld internal drain inductance measured from drain to center of die - 2.5 - nH Ls internal source inductance measured from source lead to source bond pad - 7.5 - nH Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 - 0.85 1.2 V trr reverse recovery time - 94 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V - 114 - nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data Rev. 01 — 26 January 2004 5 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 03nl28 140 Label is VGS (V) ID (A) 9 8.5 8 20 12 10 105 03nl27 35 RDSon (mΩ) 7.5 30 7 70 6.5 6 25 5.5 35 5 4.5 0 20 0 2 4 6 8 10 VDS (V) Tj = 25 °C; tp = 300 µs 5 10 15 VGS (V) 20 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03nl29 60 Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03np02 2.8 Label is VGS (V) RDSon (mΩ) 6 6.5 7 8 a 10 20 50 2.1 40 1.4 30 0.7 20 10 0 0 35 70 105 ID (A) 140 Tj = 25 °C; tp = 300 µs -60 80 150 Tj (°C) 220 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data 10 Rev. 01 — 26 January 2004 6 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 03no98 5 03aa35 10-1 ID (A) VGS(th) (V) 4 10-2 max 10-3 3 typ 2 min typ max 10-4 min 10-5 1 10-6 0 -60 10 80 150 220 0 Tj (°C) 2 4 VGS (V) 6 Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nl25 40 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nl30 3000 Ciss gfs (S) C (pF) 30 2000 Coss 20 1000 Crss 10 0 0 20 40 ID (A) 60 0 10-1 102 10 VDS (V) Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data 1 Rev. 01 — 26 January 2004 7 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 03nl26 100 03nl24 10 VGS (V) ID (A) 8 75 VDD = 14 V 6 VDD = 80 V 50 4 25 Tj = 185 °C Tj = 25 °C 2 0 0 0 2 4 6 VGS (V) 8 0 10 20 30 40 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03nl23 100 IS (A) 75 50 Tj = 185 °C Tj = 25 °C 25 0 0.0 0.3 0.6 0.9 1.2 VSD (V) VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data Rev. 01 — 26 January 2004 8 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 7. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E A2 A A1 b2 E1 mounting base D1 D HE L2 2 L1 L 1 3 b1 w M A b c e e1 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1(1) A2 b b1 b2 c D D1 min. E mm 2.38 2.22 0.65 0.45 0.93 0.73 0.89 0.71 1.1 0.9 5.46 5.26 0.4 0.2 6.22 5.98 4.0 6.73 6.47 E1 e e1 4.81 2.285 4.57 4.45 HE L L1 min. L2 w y max. 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 16. SOT428 (D-PAK) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data Rev. 01 — 26 January 2004 9 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 8. Revision history Table 6: Revision history Rev Date 01 20040126 CPCN Description - Product data (9397 750 12232) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Product data Rev. 01 — 26 January 2004 10 of 12 BUK7227-100B Philips Semiconductors TrenchMOS™ standard level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12232 Rev. 01 — 26 January 2004 11 of 12 Philips Semiconductors BUK7227-100B TrenchMOS™ standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 January 2004 Document order number: 9397 750 12232