MICROWAVE CORPORATION HMC449 v00.0404 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT Typical Applications Features The HMC449 is suitable for: Output Power: +10 dBm • Pt to Pt & Multi-Pt Radios Wide Input Power Range: -4 to +6 dBm • VSAT Radios Fo Isolation: 34 dBc @ Fout= 30 GHz 3 FREQ. MULTIPLIERS - CHIP 4 • Military EW, ECM, C I 100 kHz SSB Phase Noise: -132 dBc/Hz • Test Instrumentation Single Supply: 5V@ 50 mA • Space Die Size: 1.10 mm x 1.20 mm x 0.1 mm Functional Diagram General Description The HMC449 die is a x2 active broadband frequency multiplier chip utilizing GaAs PHEMT technology. When driven by a 0 dBm signal the multiplier provides +10 dBm typical output power from 28 to 32 GHz. The Fo and 3Fo isolations are >34 dBc and >17 dBc respectively at 30 GHz. The HMC449 is ideal for use in LO multiplier chains yielding a reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -132 dBc/Hz at 100 kHz offset helps maintain good system noise performance. All data is with the chip in a 50 ohm test fixture connected via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils). Electrical Specifications, TA = +25° C, Vdd= 5.0V, 0 dBm Drive Level Parameter Min. Frequency Range, Input Max. Units 13.5 - 16.5 GHz 27 - 33 GHz 10 dBm Fo Isolation (with respect to output level) Fout= 30 GHz 34 dBc 3Fo Isolation (with respect to output level) Fout= 30 GHz 17 dBc Input Return Loss 13 dB Output Return Loss 9 dB -132 dBc/Hz 50 mA Frequency Range, Output Output Power 6 SSB Phase Noise (100 kHz Offset) Supply Current (Idd) 4 - 34 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC449 v00.0404 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT +25 C +85 C -55 C 26 27 28 29 30 31 32 33 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -6 dBm -4 dBm -2 dBm 0 dBm +2 dBm +4 dBm +6 dBm 26 34 27 28 OUTPUT FREQUENCY (GHz) 29 4 30 31 32 33 34 OUTPUT FREQUENCY (GHz) Output Power vs. Supply Voltage @ 0 dBm Drive Level Isolation @ 0 dBm Drive Level 15 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 OUTPUT POWER (dBm) 10 Vdd=4.5V Vdd=5.0V Vdd=5.5V 5 0 Fo 2Fo -5 3Fo -10 -15 -20 -25 -30 26 27 28 29 30 31 32 33 34 26 27 28 OUTPUT FREQUENCY (GHz) 29 30 31 32 OUTPUT FREQUENCY (GHz) Pin vs. Pout @ 3 Frequencies OUTPUT POWER (dBm) OUTPUT POWER (dBm) GHz 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 33 34 FREQ. MULTIPLIERS - CHIP 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 OUTPUT POWER (dBm) OUTPUT POWER (dBm) Output Power vs. GaAs MMIC SUB-HARMONICALLY PUMPED MIXER - 25 Output Power vs. Drive17 Level Temperature @ 0 dBm Drive Level Fout=27 GHz Fout=30 GHz Fout=33 GHz -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 4 - 35 MICROWAVE CORPORATION HMC449 v00.0404 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT Output Return Loss vs. Temperature Input Return Loss vs. Temperature 0 +25 C +85 C -5 +25 C OUTPUT RETURN LOSS (dB) 4 INPUT RETURN LOSS (dB) 0 -55 C -10 -15 +85 C -5 -55 C -10 -15 -20 -20 13 13.5 14 14.5 15 15.5 16 16.5 17 26 27 28 29 4 - 36 30 31 32 FREQUENCY (GHz) SSB Phase Noise Performance, Fout = 26.4 GHz, Pin = 0 dBm SSB PHASE NOISE (dBc/Hz) FREQ. MULTIPLIERS - CHIP FREQUENCY (GHz) 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 2 10 3 10 4 10 5 10 6 10 7 10 OFFSET FREQUENCY (Hz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 33 34 MICROWAVE CORPORATION HMC449 v00.0404 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT Absolute Maximum Ratings Typical Supply Current vs. Vdd RF Input (Vcc= +5V) +20 dBm Vdd (Vdc) Idd (mA) Supply Voltage (Vdd) +6.0 Vdc 4.5 49 Channel Temperature 175 °C 5.0 50 Continuous Pdiss (T= 85 °C) (derate 8.3 mW/°C above 85 °C) 744 mW 5.5 51 Thermal Resistance (junction to die bottom) 121 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 4 FREQ. MULTIPLIERS - CHIP Note: Multiplier will operate over full voltage range shown above. Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]. 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE. 4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER. 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE METALIZATION: GOLD 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 4 - 37 MICROWAVE CORPORATION HMC449 v00.0404 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT Pad Description FREQ. MULTIPLIERS - CHIP 4 4 - 38 Pad Number Function Description 1 RF IN Pin is AC coupled and matched to 50 Ohm from 13 - 16 GHz. 2, 3 Vdd Supply voltage 5V ± 0.5V. 4 RF OUT Pin is AC coupled and matched to 50 Ohm from 26 - 32 GHz. GND Die bottom must be connected to RF ground. Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC449 v00.0404 GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 4 Mounting Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 3 mil Ribbon Bond 3 mil Ribbon Bond 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). FREQ. MULTIPLIERS - CHIP The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 4 - 39