PROFET® BTS 734 L1
Smart Two Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance
RON
Nominal load current IL(NOM)
Current limitation
IL(SCr)
Vbb(AZ)
Vbb(on)
one
40
4.8
19
43
V
5.0 ... 34
V
two parallel
20
mΩ
7.3
A
19
A
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
7
17,18
13,14
4
8
2
6
5,9
1)
Symbol Function
Positive power supply voltage. Design the
Vbb
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
IN1
Input 1,2, activates channel 1,2 in case of
IN2
logic high signal
OUT1
Output 1,2, protected high-side power output
OUT2
of channel 1,2. Design the wiring for the max.
short circuit current
ST1
Diagnostic feedback 1,2 of channel 1,2,
ST2
open drain, low on failure
GND1
Ground 1 of chip 1 (channel 1)
GND2
Ground 2 of chip 2 (channel 2)
N.C.
Not Connected
Pin configuration (top view)
Vbb
GND1
IN1
ST1
N.C.
GND2
IN2
ST2
N.C.
Vbb
1
2
3
4
5
6
7
8
9
10
•
20
19
18
17
16
15
14
13
12
11
Vbb
Vbb
OUT1
OUT1
Vbb
Vbb
OUT2
OUT2
Vbb
Vbb
With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
10.96
BTS 734 L1
Block diagram
Two Channels; Open Load detection in on state;
+ Vbb
Voltage
Overvoltage Current
source
protection
limit
Leadframe
Gate
protection
VLogic
3
Voltage
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads Temperature
sensor
Rectifier
IN1
OUT1 17,18
Open load
4
ST1
Logic
ESD
Load
detection
R
O1
1
GND1
GND1
Chip 1
Signal GND
Chip 1
Load GND
+ Vbb
Leadframe
OUT2 13,14
Logic and protection circuit of chip 2
(equivalent to chip 1)
7
IN2
Load
8
ST2
R
O2
6
GND2
Chip 2
PROFET
Signal GND
Chip 2
GND2
Load GND
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Vbb
Vbb
Semiconductor Group
2
Values
Unit
43
34
V
V
BTS 734 L1
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Values
Unit
Load current (Short-circuit current, see page 5)
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3) = 2 Ω, td = 200 ms; IN = low or high,
each channel loaded with RL = 2.8 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)5)
Ta = 25°C:
(all channels active)
Ta = 85°C:
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C5),
IL = 4.8 A, ZL = 44 mH, 0 Ω
one channel:
IL = 7.3 A, ZL = 44 mH, 0 Ω
two parallel channels:
IL
VLoad dump4)
self-limited
60
A
V
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
3.8
2.0
°C
EAS
0.65
1.5
J
VESD
1.0
kV
-10 ... +16
±2.0
±5.0
V
mA
Values
typ
max
Unit
W
see diagrams on page 10
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagram page 8
Thermal Characteristics
Parameter and Conditions
Symbol
min
Thermal resistance
junction - soldering point5),6)
each channel: Rthjs
5)
junction - ambient
one channel active: Rthja
all channels active:
2)
3)
4)
5)
6)
----
-40
33
11
---
K/W
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 16
Soldering point: upper side of solder edge of device pin 15. See page 16
Semiconductor Group
3
BTS 734 L1
Electrical Characteristics
Parameter and Conditions, each of the two channels
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
Tj = 25°C: RON
each channel,
IL = 2 A
Tj = 150°C:
two parallel channels, Tj = 25°C:
Nominal load current
one channel active:
two parallel channels active:
Device on PCB5), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled
up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time7)
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on 7)
Tj =-40...+150°C:
10 to 30% VOUT, RL = 12 Ω,
7)
Slew rate off
Tj =-40...+150°C:
70 to 40% VOUT, RL = 12 Ω,
Operating Parameters
Operating voltage8)
Undervoltage shutdown
Undervoltage restart
Tj =-40...+150°C:
Tj =-40...+150°C:
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
Tj =-40...+150°C:
see diagram page 14
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Tj =-40...+150°C:
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection9)
I bb = 40 mA
Tj =25°C:
Standby current, all channels off
Tj =150°C:
VIN = 0
7)
8)
9)
Values
min
typ
max
--
4
mΩ
36
67
40
75
4.4
6.7
18
4.8
7.3
20
--
A
--
--
10
mA
ton
toff
80
80
180
250
350
450
µs
dV/dton
0.1
--
1
V/µs
-dV/dtoff
0.1
--
1
V/µs
Vbb(on)
Vbb(under)
Vbb(u rst)
5.0
3.5
--
----
V
V
V
Vbb(ucp)
--
5.6
34
5.0
5.0
7.0
7.0
V
∆Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
34
33
-42
--0.5
47
43
----
V
V
V
V
---
16
24
40
50
µA
IL(NOM)
IL(GNDhigh)
Ibb(off)
See timing diagram on page 12.
At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
see also VON(CL) in circuit diagram on page 8.
Semiconductor Group
Unit
BTS 734 L1
Parameter and Conditions, each of the two channels
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
--
--
20
µA
---
1.8
3.6
4
8
mA
each channel, Tj =-40°C: IL(SCp)
47
55
66
35
44
54
Tj =25°C:
21
26
34
Tj =+150°C:
two parallel channels
twice the current of one channel
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
-19
--19
-two parallel channels
A
Leakage output current (included in Ibb(off))
IL(off)
VIN = 0
Operating current 10), VIN = 5V, Tj =-40...+150°C
IGND = IGND1 + IGND2,
one channel on: IGND
two channels on:
Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 13)
A
(see timing diagrams, page 13)
Initial short circuit shutdown time
Tj,start =-40°C: toff(SC)
Tj,start = 25°C:
---
3
2.5
---
ms
41
47
--
V
150
--
-10
---
°C
K
---
-600
32
--
V
mV
(see page 11 and timing diagrams on page 13)
VON(CL)
Output clamp (inductive load switch off)11)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
Tjt
∆Tjt
Reverse Battery
Reverse battery voltage 12)
Drain-source diode voltage (Vout > Vbb)
IL = - 4.8 A, Tj = +150°C
-Vbb
-VON
10)
11)
Add IST, if IST > 0
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and
circuit page 8).
Semiconductor Group
5
BTS 734 L1
Parameter and Conditions, each of the two channels
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Diagnostic Characteristics
Open load detection current, (on-condition)
20
-- 1050
each channel, Tj = -40°C: I L (OL)
20
-800
Tj = 25°C:
20
-800
Tj = 150°C:
twice the current of one channel
two parallel channels
)
13
Open load detection voltage
Tj =-40..+150°C: VOUT(OL)
2
3
4
Internal output pull down
Tj =-40..+150°C: RO
4
10
30
(OUT to GND), VOUT = 5 V
1
Input and Status Feedback14)
Input resistance
Unit
mA
V
kΩ
RI
2.5
3.5
6
kΩ
VIN(T+)
1.7
--
3.3
V
VIN(T-)
1.5
--
--
V
-1
0.5
--
-50
V
µA
20
50
90
µA
100
520
1000
µs
--
250
600
µs
5.4
---
6.1
---
-0.4
0.6
V
(see circuit page 8)
Input turn-on threshold voltage
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
VIN = 0.4 V:
Off state input current
Tj =-40..+150°C:
VIN = 5 V:
On state input current
Tj =-40..+150°C:
Delay time for status with open load after switch
off
Tj =-40..+150°C:
(see timing diagrams, page 13),
Status invalid after positive input slope
Tj =-40..+150°C:
(open load)
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage
Tj =-40...+25°C, IST = +1.6 mA:
Tj = +150°C, IST = +1.6 mA:
13)
14)
∆ VIN(T)
IIN(off)
IIN(on)
td(ST OL4)
td(ST)
VST(high)
VST(low)
External pull up resistor required for open load detection in off state.
If ground resistors RGND are used, add the voltage drop across these resistors.
Semiconductor Group
6
BTS 734 L1
Truth Table
Channel 1
Input 1
Output 1
Status 1
Channel 2
Input 2
Output 2
Status 2
level
level
BTS 734L1
L
H
L
H
L
H
L
H
L
H
L
H
L
H
Z
H
H
H
L
L
L
L
L
L
H
H
H (L15))
L
L16)
H (L17))
H
L
H
H
H
H
Normal
operation
Open load
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The
status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
Ibb
V
bb
3
IN1 VST1
4
ST1
I IN2
Vbb
IN1
I ST1
V
Leadframe
Leadframe
I IN1
I L1
PROFET
Chip 1
OUT1
VON1
V
R
I
GND1
VOUT1
GND1
IN2
V ST2
8
Vbb
IN2
I ST2
17,18
GND1
2
7
ST2
I L2
PROFET
Chip 2
OUT2
VON2
13,14
GND2
6
R
GND2
IGND2
VOUT2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
15)
16)
With external resistor between output and Vbb
An external short of output to Vbb in the off state causes an internal current from output to ground. If R GND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
17) Low resistance to V may be detected by no-load-detection
bb
Semiconductor Group
7
BTS 734 L1
Input circuit (ESD protection), IN1 or IN2
Overvoltage protection of logic part
GND1 or GND2
R
IN
I
+ V bb
ESD-ZD I
I
V
I
RI
IN
GND
Z2
Logic
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
R ST
ST
V
PROFET
Z1
GND
R GND
Status output, ST1 or ST2
Signal GND
+5V
R ST(ON)
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 150 Ω, RST = 15 kΩ nominal.
ST
Reverse battery protection
GND
ESDZD
± 5V
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Inductive and overvoltage output clamp,
- Vbb
R ST
IN
RI
Logic
ST
OUT
Power
Inverse
Diode
GND
OUT1 or OUT2
RGND
+Vbb
Signal GND
Power GND
RGND = 150 Ω, RI = 3.5 kΩ typ,
VZ
Temperature protection is not active during inverse current
operation.
V ON
OUT
PROFET
Power GND
VON clamped to VON(CL) = 47 V typ.
Semiconductor Group
RL
8
BTS 734 L1
Open-load detection, OUT1 or OUT2
ON-state diagnostic condition:
VON < RON·IL(OL); IN high
GND disconnect with GND pull up
IN
+ V bb
Vbb
PROFET
OUT
ST
VON
ON
GND
OUT
Logic
unit
V
Open load
detection
V
bb
V
IN ST
V
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load
OFF-state diagnostic condition:
VOUT > 3 V typ.; IN low
R
high
EXT
IN
PROFET
OFF
V
Logic
unit
Open load
detection
R
GND
O
V
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.
Vbb
IN
PROFET
OUT
ST
GND
V
IN
V
bb
For inductive load currents up to the limits defined by EAS
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
GND disconnect
bb
OUT
ST
OUT
Signal GND
V
Vbb
ST
V
GND
Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
Semiconductor Group
9
BTS 734 L1
Inductive load switch-off energy
dissipation
E bb
E AS
ELoad
Vbb
IN
OUT
PROFET
=
L
ST
GND
ZL
EL
{
R
ER
L
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
IL· L
(V + |VOUT(CL)|)
2·RL bb
ln (1+ |V
IL·RL
OUT(CL)|
)
Maximum allowable load inductance for
a single switch off (one channel)5)
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [mH]
1000
100
10
1
3
4
5
6
7
8
9
10 11 12 13 14
IL [A]
Semiconductor Group
10
BTS 734 L1
Typ. on-state resistance
Typ. standby current
RON = f (Vbb,Tj ); IL = 2 A, IN = high
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
RON [mOhm]
Ibb(off) [µA]
45
120
40
100
35
30
80
Tj = 150°C
25
60
85°C
20
25°C
40
15
-40°C
10
20
5
0
0
0
10
20
30
40
-50
0
50
100
150
Vbb [V]
200
Tj [°C]
Typ. open load detection current
Typ. initial short circuit shutdown time
IL(OL) = f (Vbb,Tj ); IN = high
toff(SC) = f (Tj,start ); Vbb =12 V
IL(OL) [mA]
toff(SC) [msec]
800
3
-40°C
700
no-load detection not specified
for Vbb < 6 V
2.5
600
500
400
300
200
25°C
2
85°C
1.5
Tj = 150°C
1
0.5
100
0
0
5
10
15
20
25
30
Vbb [V]
Semiconductor Group
11
0
-50
0
50
100
150
200
Tj,start [°C]
BTS 734 L1
Timing diagrams
Both channels are symmetric and consequently the diagrams are valid for channel 1 and
channel 2
Figure 1a: Vbb turn on:
Figure 2b: Switching a lamp:
IN1
IN
IN2
V bb
ST
V
V
OUT1
OUT
V
OUT2
I
L
ST open drain
t
t
The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 44 A typ. of the device.
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
Figure 2c: Switching an inductive load
IN
IN
VOUT
t
ST
d(ST)
90%
t on
dV/dton
*)
dV/dtoff
t
V
OUT
off
10%
IL
IL
I L(OL)
t
t
*) if the time constant of load is too large, open-load-status may
occur
Semiconductor Group
12
BTS 734 L1
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
IN1
I
Figure 4a: Overtemperature:
Reset if Tj <Tjt
other channel: normal operation
IN
ST
L1
I
L(SCp)
I
V
OUT
L(SCr)
t off(SC)
T
J
ST
t
t
Heating up of the chip may require several milliseconds, depending
on external conditions (toff(SC) vs. Tj,start see page 11)
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
IN
IN1/2
I
+I
L1
ST
L2
t
d(ST)
t
d(ST OL4)
I L(SCp)
V
OUT
I L(SCr)
I
t
L
off(SC)
open
ST1/2
t
t
The status delay td(ST OL4) is for differentiation between the failure
modes "open load in ON-state" and "overtemperature"; td(ST OL4)
only appears after turn off to open load.
ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.
Semiconductor Group
13
BTS 734 L1
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
Figure 6a: Undervoltage:
IN
IN
t
d(ST OL1)
t
ST
V bb
d(ST OL2)
V
V
bb(under)
V
V
OUT
OUT
I
bb(u rst)
normal
open
normal
ST
L
t
t
td(ST OL1) = 20 µs typ., td(ST OL2) = 10 µs typ
Figure 6b: Undervoltage restart of charge pump
Figure 5c: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load
VON(CL)
V on
V
d(ST)
OUT
V
V
V
bb(u rst)
V
bb(over)
off-state
t
on-state
ST
off-state
IN
bb(o rst)
bb(u cp)
V bb(under)
I
L
open
V bb
t
IN = high, normal load conditions.
Charge pump starts at Vbb(ucp) = 5.6 V typ.
Semiconductor Group
14
BTS 734 L1
Figure 7a: Overvoltage:
IN
V bb
V ON(CL)
Vbb(over)
V bb(o rst)
V
OUT
ST
t
Semiconductor Group
15
BTS 734 L1
Package and Ordering Code
Standard P-DSO-20-9
BTS734L1
Ordering Code
Q67060-S7009-A2
All dimensions in millimetres
1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side
Definition of soldering point with temperature Ts:
upper side of solder edge of device pin 15.
Pin 15
Printed circuit board (FR4, 1.5mm thick, one layer
70µm, 6cm2 active heatsink area) as a reference for
max. power dissipation Ptot, nominal load current
IL(NOM) and thermal resistance Rthja
Semiconductor Group
16