PD - 94008
IRFP250N
HEXFET® Power MOSFET
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
D
VDSS = 200V
RDS(on) = 0.075Ω
G
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
30
21
120
214
1.4
± 20
315
30
21
8.6
-55 to +175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.7
–––
40
°C/W
1
10/09/00
IRFP250N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
200
–––
–––
2.0
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
43
41
33
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2159
315
83
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.075
Ω
VGS = 10V, ID = 18A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 18A
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
123
ID = 18A
21
nC VDS = 160V
57
VGS = 10V, See Fig. 6 and 13
–––
VDD = 100V
–––
ID = 18A
ns
–––
RG = 3.9Ω
–––
RD = 5.5Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 30
showing the
A
G
integral reverse
––– ––– 120
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 18A, VGS = 0V
––– 186 279
ns
TJ = 25°C, IF = 18A
––– 1.3 2.0
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 1.9mH
ISD ≤ 18A, di/dt ≤ 374A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 18A. (See Figure 12)
2
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IRFP250N
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
1000
100
10
4.5V
1
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
4.5V
1
TJ = 175 ° C
10
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
7.0
10
100
Fig 2. Typical Output Characteristics
1000
6.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
20µs PULSE WIDTH
TJ = 175°C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
0.1
4.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
3.5
ID = 30A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP250N
5000
VGS , Gate-to-Source Voltage (V)
4000
C, Capacitance(pF)
16
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
Ciss
2000
Coss
1000
Crss
0
ID = 18A
V DS= 160V
V DS= 100V
V DS= 40V
12
8
4
0
1
10
100
0
1000
20
40
60
80
100
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100
TJ = 175 ° C
10
TJ = 25 ° C
1
10us
100us
10
1ms
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
TC = 25 °C
TJ = 175 °C
Single Pulse
1.6
1
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP250N
RD
VDS
35
35
VGS
30
30
D.U.T.
ID , Drain Current (A)
ID , Drain Current (A)
RG
+
V
DD
-
25
25
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
20
15
15
Fig 10a. Switching Time Test Circuit
10
10
VDS
90%
5
5
0
0
25
25
50
50
75
100
125
150
125
° C)
TC 75
, Case100
Temperature
(150
TC , Case Temperature ( ° C)
175
175
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
1
D = 0.50
0.20
0.1
0.10
PDM
0.05
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFP250N
800
ID
7.3A
13A
BOTTOM 18A
TOP
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFP250N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP250N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3.65 (.1 43 )
3.55 (.1 40 )
1 5.90 (.6 2 6)
1 5.30 (.6 0 2)
-B-
0.25 (.0 1 0) M
5 .3 0 (.20 9 )
4 .7 0 (.18 5 )
2 .5 0 (.08 9)
1 .5 0 (.05 9)
4
D B M
-A5 .50 (.21 7)
2 0 .30 (.80 0)
1 9 .70 (.77 5)
2X
1
2
NOTES:
5.50 (.2 1 7)
4.50 (.1 7 7)
1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
T O -247-A C .
3
-C -
1 4.8 0 (.5 83 )
1 4.2 0 (.5 59 )
2 .40 (.09 4)
2 .00 (.07 9)
2X
5.45 (.2 1 5)
2X
4 .3 0 (.1 70 )
3 .7 0 (.1 45 )
0 .80 (.03 1)
3X 0 .40 (.01 6)
1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0 .2 5 (.0 10 ) M
LE A D A S S IG N M E N TS
1
2
3
4
2.60 (.1 0 2)
2.20 (.0 8 7)
C A S
3 .4 0 (.1 33 )
3 .0 0 (.1 18 )
-
G A TE
D R A IN
SOURCE
D R A IN
Part Marking Information
TO-247AC
E XAM P L E : TH IS IS A N IR F P E3 0
W ITH A SS E M B L Y
LOT CODE 3A1Q
A
IN TER N A TIO N A L
R E C T IF IE R
LOGO
P A R T N U M B ER
IR F P E 3 0
3 A 1 Q 9 3 02
A S SE M B L Y
LOT CODE
D A TE C O D E
(YYW W )
YY = YE A R
W W W EE K
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Data and specifications subject to change without notice. 10/00
8
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