Peregrine EK42451-01 Sp5t absorptive ultracmo Datasheet

Product Specification
PE42451
Product Description
The PE42451 is a HaRP™-enhanced Absorptive SP5T RF
Switch developed on the UltraCMOS™ process technology.
This general purpose switch is comprised of five symmetric RF
ports and has very high isolation. An on-chip CMOS decode
logic facilitates a three-pin low voltage CMOS control interface
and an optional external Vss feature (VssEXT). High ESD
tolerance and no blocking capacitor requirements make this the
ultimate in integration and ruggedness.
Peregrine’s HaRP™ technology enhancements deliver high
linearity and exceptional harmonics performance. It is an
innovative feature of the UltraCMOS™ process, providing
performance superior to GaAs with the economy and integration
of conventional CMOS.
SP5T Absorptive UltraCMOS™
High-Isolation RF Switch
450-4000 MHz, VssEXT option
Features
• HaRP™-enhanced UltraCMOS™ device
• Five symmetric, absorptive RF ports
• High Isolation:
• 68 dB at 450 MHz
• 62 dB at 900 MHz
• 55 dB at 2100 MHz
• 53 dB at 2600 MHz
• 50 dB at 4000 MHz
• IIP2 of 95 dBm, IIP3 of 58 dBm
• High ESD tolerance of 3500 V HBM
• Optional External Vss Control (VssEXT)
Figure 1. Functional Diagram
• Three pin CMOS logic control
• No blocking capacitors required
• Small RoHS-Compliant 24-lead 4x4 mm
RFC
QFN package
ESD
RF4
RF1
ESD
ESD
50Ω
50Ω
RF5
RF2
ESD
ESD
50Ω
Figure 2. Package Photo
24-lead 4x4x0.85 mm QFN Package
50Ω
RF3
ESD
CMOS
Control/Driver
and ESD
V1 V2 V3
50Ω
VssEXT (optional)
Document No. 70-0298-03 │ www.psemi.com
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 11
PE42451
Product Specification
Table 1. Electrical Specifications @ 25 °C, VDD = 3.0 V (ZS = ZL = 50 Ω)
Electrical Parameter
Path
Condition
Operating Frequency
Min
Typ
450
RFC - RFX
RFC - RFX
RFC - RFX
RFC - RFX
RFC - RFX
450 MHz
900 MHz
2100 MHz
2600 MHz
4000 MHz
RFC/RFX - RFX
RFC/RFX - RFX
RFC/RFX - RFX
RFC/RFX - RFX
RFC/RFX - RFX
450 MHz
900 MHz
2100 MHz
2600 MHz
4000 MHz
Return Loss, Active Port
RFX
Return Loss, Terminated Port
Insertion Loss, IL
1.6
1.65
1.95
2.05
2.25
Unit
4000
MHz
1.95
2.05
2.30
2.40
2.75
dB
dB
dB
dB
dB
68
62
55
53
50
dB
dB
dB
dB
dB
450 - 4000 MHz
16
dB
RFX
450 - 4000 MHz
15
dB
Input 1 dB compression1, P1dB
RFX - RFC
All Bands,100% duty cycle
35
dBm
Input IP2
RFX - RFC
All Bands, 100% duty cycle
95
dBm
Input IP3
RFX - RFC
All Bands, 100% duty cycle
58
dBm
"On"
"Off"
50% Control to 90% RF
50% Control to 10% RF
200
200
Isolation, Iso
Switching Time, TSW
Notes:
58.5
53.0
46.5
46.5
41.5
Max
500
500
ns
ns
1. Please refer to Maximum Operating Power in Table 2
Table 2. Operating Ranges
Parameter
VDD Supply Voltage
VssEXT Negative Power Supply
Voltage2
IDD Power Supply Current
VDD = 3.0 V, PIN= 0 dBm
IDD Max Power Supply Current
VDD = 3.3 V, PMAX= 33 dBm,
Temperature = -40°C
Symbol Min
Typ
Max Units
VDD
2.7
3.0
3.3
V
VssEXT
-3.3
-3.0
-2.7
V
IDD
14
IDD
(max)
µA
50
µA
Control Voltage High
VIH
0.7 x
VDD
VDD
V
Control Voltage Low
VIL
0
0.3 x
VDD
V
ICTRL
1
µA
PMAX
33
dBm
PMAX
24
dBm
+85
°C
ICTRL Control Current3
Maximum Operating Power
(RFX-RFC, All Bands (50Ω),
100% duty cycle)
Maximum power into
termination (RFX, All Bands
(50Ω),100% duty cycle)
Operating temperature range
Note:
TOP
-40
2. Applied only when external Vss power supply used.
Pin 20 must be grounded when using internal Vss supply.
3. Pull-down resistor in EVK schematic may increase
control current.
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 11
Document No. 70-0298-03 │ UltraCMOS™ RFIC Solutions
PE42451
Product Specification
Electrostatic Discharge (ESD) Precautions
GND
GND
RFC
GND
VssEXT /
GND
V3
24
23
22
21
20
19
Figure 3. Pin Configuration (Top View)
GND
1
18
V2
RF5
2
17
V1
16
Vdd
15
GND
Exposed
Ground
Paddle
GND
12
GND
GND
13
11
6
RF2
GND
GND
RF1
10
14
9
5
8
RF4
RF3
4
GND
3
GND
7
GND
When handling this UltraCMOS™ device, observe the
same precautions that you would use with other ESDsensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the PE42451 in
the 24-lead 4x4 QFN package is MSL1.
Table 3. Pin Descriptions
Pin #
Name
1, 3, 4, 6, 7, 9, 10,
12, 13, 15, 21, 23, 24
2
Description
Optional External Vss Control (VssEXT)
GND
Ground
RF54
RF I/O
5
4
RF4
RF I/O
8
RF34
RF I/O
11
RF24
RF I/O
14
4
RF1
RF I/O
16
VDD
Supply
17
V1
Switch control input, CMOS logic level
18
V2
Switch control input, CMOS logic level
19
V3
Switch control input, CMOS logic level
VssEXT /
External Vss Control / Ground
GND5
4
RFC RF Common
20
22
Paddle
Note:
GND
Ground for proper device operation
4. Blocking capacitors needed only when non-zero DC
voltage present.
5. Pin 20 must be grounded when using internal Vss supply
Table 4. Absolute Maximum Ratings
Symbol
Parameter/Conditions
For proper operation, the VssEXT control must be
grounded or at the Vss voltage specified in the
Operating Ranges table (Table 2). When the VssEXT
control pin on the package is grounded the switch
FET’s are biased with an internal low spur negative
voltage generator. For applications that require the
lowest possible spur performance, VssEXT can be
applied to bypass the internal negative voltage
generator to eliminate the spurs.
Switching Frequency
The PE42451 has a maximum 25 kHz switching rate
when the internal negative voltage generator is used
(pin 20=GND). The rate at which the PE42451 can be
switched is only limited to the switching time if an
external -3 V supply is provided (pin 20=VssEXT ).
Table 5. Truth Table
Min
Max
Units
Mode
V3
V2
V1
-60
+150
°C
All off
0
0
0
Maximum Operating Power
(RFX-RFC, All Bands (50Ω),
100% duty cycle)
RF1 on
0
0
1
33
dBm
RF2 on
0
1
0
Maximum power into
termination (RFX, All Bands
(50Ω),100% duty cycle)
RF3 on
0
1
1
PMAX
24
dBm
RF4 on
1
0
0
VESD
ESD Voltage HBM6, All Pins
3500
V
RF5 on
1
0
1
VESD
ESD Voltage MM7, All Pins
All off
1
1
0
Unsupported
1
1
1
TST
Storage temperature range
PMAX
Notes:
150
V
6. Human Body Model ESD Voltage (HBM, MIL_STD 883
Method 3015.7)
7. Machine Model ESD Voltage (JESD22-A115-A)
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to
the limits in the Operating Ranges table.
Document No. 70-0298-03 │ www.psemi.com
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 11
PE42451
Product Specification
Figure 4. Evaluation Board Layouts
Evaluation Kit
Peregrine Specification 101/0479
The SP5T switch EK Board was designed to ease
customer evaluation of Peregrine’s PE42451. The RF
common port is connected through a 50 Ω transmission
line via the top SMA connector. RF1, RF2, RF3 and
RF4 are connected through 50 Ω transmission lines via
side SMA connectors. A through 50 Ω transmission is
available via SMA connectors RFCAL1 and RFCAL2.
This transmission line can be used to estimate the loss
of the PCB over the environmental conditions being
evaluated.
The EVK board is constructed with four metal layers on
dielectric materials of Rogers 4003C and 4450 with a
total thickness of 32 mils. Layer 1 and layer 3 provide
ground for the 50 ohm transmission lines. The 50 ohm
transmission lines are designed in layer 2 for high
isolation purpose and use a stripline waveguide design
with a trace width of 9.4 mils and trace metal thickness
of 1.8 mils. The board stack up for 50 ohm transmission
lines has 8 mil thickness of Rogers 4003C between
layer 1 and layer 2, and 10 mil thickness of Rogers
4450 between layer 2 and layer 3. Please consult
manufacturer's guidelines for proper board material
properties in your application. The PCB should be
designed in such a way that RF transmission lines and
sensitive DC i/o traces such as VssEXT are heavily
isolated from one another, otherwise the true
performance of the PE42451 will not be yielded.
Figure 5. Evaluation Board Schematic
Peregrine Specification 102/0569
J1
HEADER 14
R1
VSS
VDD
0 OHM
R2
C1
V3
V2
V1
1M
DNI
13
11
9
7
5
3
1
13
11
9
7
5
3
1
14
12
10
8
6
4
2
14
12
10
8
6
4
2
R3
0 OHM
R4
C2
100pF
RFC
1M
R5
2
1
0 OHM
R6
C3
100pF
RFC
1M
R7
1
RF5
RF5
1
GND
2
RF5
3
GND
4
GND
20
19
V3
VSS
22
23
21
GND
RFC
GND
GND
24
0 OHM
R8
C4
100pF
V2
18
V1
17
VDD
16
GND
15
1M
2
R9
U1
0 OHM
1
RF2
1
RF3
RF3
C6
1µF
USE PCB 101-0479-03
2
RF1
C5
100pF
12
11
10
9
7
RF1
GND
13
RF2
14
GND
GND
RF1
GND
GND
RF4
6
RF3
5
GND
2
RF4
8
1
RF4
PE4245x_24L_QFN
RF2
RFCAL2
RFCAL1
1
1
RF
RF CAL
1
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 11
2
2
2
2
STRIPLINE
Document No. 70-0298-03 │ UltraCMOS™ RFIC Solutions
PE42451
Product Specification
Performance Plots @ 25 °C and 3.0 V unless otherwise specified
Figure 6. Insertion Loss: RFC-RFX @ 25 °C
Figure 7. Insertion Loss: RFC-RFX @ 3.0 V
Figure 8. Insertion Loss: All Paths
Document No. 70-0298-03 │ www.psemi.com
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 11
PE42451
Product Specification
Performance Plots @ 25 °C and 3.0 V unless otherwise specified
Figure 9. Isolation: RFC-RFX @ 25 °C
Figure 10. Isolation: RFC-RFX @ 3.0 V
Figure 11. Isolation: RFX-RFX @ 25 °C
Figure 12. Isolation: RFX-RFX @ 3.0 V
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 6 of 11
Document No. 70-0298-03 │ UltraCMOS™ RFIC Solutions
PE42451
Product Specification
Performance Plots @ 25 °C and 3.0 V unless otherwise specified (Continued)
Figure 13. Return Loss at active port @ 25 °C
Figure 14. Return Loss at active port @ 3.0 V
Figure 15. Return Loss: RFC @ 25 °C
Figure 16. Return Loss: RFC @ 3.0 V
Figure 17. Return Loss: All Paths, Terminated
Document No. 70-0298-03 │ www.psemi.com
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 7 of 11
PE42451
Product Specification
Performance Plots @ 25 °C and 3.0 V unless otherwise specified (Continued)
Figure 18. Nominal Linearity Performance (IIP3)
Figure 19. Nominal Linearity Performance (IIP2)
70
120
60
100
50
IIP2 [dBm]
IIP3 [dBm]
80
40
TX1
30
TX2
TX3
20
60
TX1
TX2
40
TX3
TX4
TX4
TX5
20
10
0
0
1000
2000
3000
4000
5000
6000
Frequency [MHz]
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 8 of 11
TX5
0
0
1000
2000
3000
4000
5000
6000
Frequency [MHz]
Document No. 70-0298-03 │ UltraCMOS™ RFIC Solutions
PE42451
Product Specification
Figure 20. Package Drawing
Peregrine Specification 19/0130
A
Max.
0.900
Nom.
0.850
Min.
0.800
Document No. 70-0298-03 │ www.psemi.com
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 9 of 11
PE42451
Product Specification
Figure 21. Tape and Reel Drawing
A0 = 4.35
B0 = 4.35
K0 = 1.1
Tape Feed Direction
Pin 1
Top of
Device
Device Orientation in Tape
Figure 22. Marking Specifications
42451
YYWW
ZZZZZ
YYWW = Date Code
ZZZZZ = Last five digits of Lot Number
Table 6. Ordering Information
Order Code
Part Marking
Description
Package
Shipping Method
PE42451MLIAA
42451
PE42451G-24QFN 4x4mm-cut off tape and reel
Green 24-lead 4x4mm QFN
Bulk or tape cut from reel
PE42451MLIAA-Z
42451
PE42451G-24QFN 4x4mm-3000C
Green 24-lead 4x4mm QFN
3000 units / T&R
EK42451-01
PE42451 -EK
PE42451-24QFN 4x4mm-EK
Evaluation Kit
1 / Box
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 10 of 11
Document No. 70-0298-03 │ UltraCMOS™ RFIC Solutions
PE42451
Product Specification
Sales Offices
The Americas
Peregrine Semiconductor Corporation
Peregrine Semiconductor, Asia Pacific (APAC)
9380 Carroll Park Drive
San Diego, CA 92121
Tel: 858-731-9400
Fax: 858-731-9499
Shanghai, 200040, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
Europe
Peregrine Semiconductor Europe
Bâtiment Maine
13-15 rue des Quatre Vents
F-92380 Garches, France
Tel: +33-1-4741-9173
Fax : +33-1-4741-9173
High-Reliability and Defense Products
Americas
San Diego, CA, USA
Phone: 858-731-9475
Fax: 848-731-9499
Europe/Asia-Pacific
Parc Cezanne 1
380 Avenue Archimède, Parc de la Duranne
13857 Aix-En-Provence Cedex 3, France
Phone: +33-4-4239-3361
Fax: +33-4-4239-7227
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210
Geumgok-dong, Bundang-gu, Seongnam-si
Gyeonggi-do, 463-943 South Korea
Tel: +82-31-728-3939
Fax: +82-31-728-3940
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6
1-1-1 Uchisaiwai-cho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
For a list of representatives in your area, please refer to our
Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a CNF
(Customer Notification Form).
Document No. 70-0298-03 │ www.psemi.com
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks
of Peregrine Semiconductor Corp.
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
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