CYStech Electronics Corp. Spec. No. : C356C3 Issued Date : 2011.11.03 Revised Date : 2014.03.04 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC115EC3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA115EC3 • Pb-free package Equivalent Circuit Outline DTC115EC3 SOT-523 R1=100kΩ , R2=100 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter Ordering Information Device DTC115EC3-0-T1-G Package SOT-523 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTC115EC3 CYStek Product Specification Spec. No. : C356C3 Issued Date : 2011.11.03 Revised Date : 2014.03.04 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25℃) Parameter Supply Voltage Input Voltage Symbol VCC VIN IO IO(max.) Pd Tj Tstg Output Current Power Dissipation Junction Temperature Storage Temperature Limits 50 -10~+40 20 100 150 150 -55~+150 Unit V V mA mA mW °C °C Characteristics (Ta=25℃) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. 3 82 70 0.8 - Typ. 0.1 100 1 250 Max. 0.5 0.3 0.15 0.5 130 1.2 - Unit V V V mA μA kΩ MHz Test Conditions VCC=5V, IO=100μA VO=0.3V, IO=1mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IC=5mA, f=100MHz* * Transition frequency of the device DTC115EC3 CYStek Product Specification Spec. No. : C356C3 Issued Date : 2011.11.03 Revised Date : 2014.03.04 Page No. : 3/6 CYStech Electronics Corp. Typical Characteristics Current Gain vs Output Current Output Voltage vs Output Current 1000 1 Output Voltage---VO(ON) (V) Current Gain---GI Vo = 5V 100 Io / Ii = 20 0.1 0.01 10 0.1 1 10 0.1 100 1 Output Current---IO(mA) 10 100 Output Current---Io(mA) Output Current vs Input Voltage(OFF characteristics) Input Voltage vs Output Current(ON characteristics) 10 100 Vcc = 5V Output Current---I o(mA) Input Voltage---VI(ON)(V) Vo = 0.3V 10 1 0.1 1 0.1 0.01 0.001 0.1 1 10 Output Current---Io(mA) 100 0 1 2 3 4 5 Input Voltage---VI(OFF)(V) Power Derating Curve Power Dissipation---PD(mW) 160 140 120 100 80 60 40 20 0 0 DTC115EC3 50 100 150 Ambient Temperature --- Ta(℃ ) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C356C3 Issued Date : 2011.11.03 Revised Date : 2014.03.04 Page No. : 4/6 Reel Dimension Carrier Tape Dimension DTC115EC3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C356C3 Issued Date : 2011.11.03 Revised Date : 2014.03.04 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTC115EC3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C356C3 Issued Date : 2011.11.03 Revised Date : 2014.03.04 Page No. : 6/6 SOT-523 Dimension Marking: 29 Device Code XX Date Code 3-Lead SOT-523 Plastic Surface Mounted Package CYStek Package Code: C3 Style: Pin 1.Base (Input) 2.Emitter (Ground) 3.Collector (Output) *: Typical Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 DIM A A1 A2 b1 b2 c D Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 DIM E E1 e e1 L L1 θ Inches Min. Max. 0.028 0.035 0.057 0.069 0.020* 0.035 0.043 0.016 REF 0.010 0.018 0° 8° Millimeters Min. Max. 0.700 0.900 1.450 1.750 0.500* 0.900 1.100 0.400 REF 0.260 0.460 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC115EC3 CYStek Product Specification