Mitsubishi CM200HG-130H Hvigbt modules high power switching use insulated type Datasheet

MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM200HG-130H
● IC .................................................................. 200 A
● VCES ...................................................... 6500 V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
73 ±0.5
2-M8 NUTS
17 ±0.1
57 ±0.25
(2)
C
2
E
140 ±0.5
G
124 ±0.25
44 ±0.3
C
1
E
(1)
>PET+PBT<
CIRCUIT DIAGRAM
E G
C
>PET+PBT<
5 ±0.1
LABEL
depth
min. 4
screwing depth
min. 16.5
16.2 ±0.3
5 ±0.15
2.8 ±0.1
36.2 ±0.3
40.4 ±0.5
17.4 ±0.3
5.8 ±0.1
41 ±0.3
22 ±0.3
4-φ7 MOUNTING HOLES
12.9 ±0.3
+1.0
0
21.6 ±0.3
48
TAB #110. T = 0.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
1
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Item
Tj = –40°C
Tj = +25°C
Tj = +125°C
VCES
Collector-emitter voltage
VGE = 0V
VGES
IC
ICM
IE
IEM
Pc
Viso
Ve
Tj
Top
Tstg
tpsc
Gate-emitter voltage
VCE = 0V, Tj = 25°C
DC, Tc = 80°C
Pulse
DC
Pulse
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
Collector current
Emitter current
Ratings
5800
6300
6500
± 20
200
400
200
400
2900
10200
5100
–40 ~ +150
–40 ~ +125
–40 ~ +125
10
Conditions
(Note 2)
(Note 1)
(Note 1)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width VCC = 4500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Tj = 25°C
Tj = 125°C
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
IGES
Cies
Coes
Cres
Qg
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 5)
Turn-off delay time
Turn-off fall time
Turn-off fall time
Turn-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
VCE = 10 V, IC = 20 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCE(sat)
td(on)
tr
Eon(10%)
td(off)
tf
tf2
Eoff(10%)
VEC
trr
trr2
Qrr
Erec(10%)
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
VCC = 3600 V, IC = 200 A, VGE = ±15 V, Tj = 25°C
IC = 200 A
(Note 4) Tj = 25°C
VGE = 15 V
Tj = 125°C
VCC = 3600 V, IC = 200 A, VGE = ±15 V
RG(on) = 30 Ω, Tj = 125°C, Ls = 220 nH
t(IGBT_off) = 60 µs(Note 6), Inductive load
VCC = 3600 V, IC = 200 A, VGE = ±15 V
RG(off) = 100 Ω, Tj = 125°C, Ls = 220 nH
Inductive load
IE = 200 A
VGE = 0 V
(Note 4)
VCC = 3600 V, IE = 200 A, VGE = ±15 V
RG(on) = 30 Ω, Tj = 125°C, Ls = 220 nH
t(IGBT_off) = 60 µs(Note 6), Inductive load
Tj = 25°C
Tj = 125°C
Min
—
—
5.0
–0.5
—
—
—
—
—
—
—
—
Limits
Typ
—
10
6.0
—
41.0
2.5
0.7
3.3
4.50
4.60
1.20
0.35
Max
3
30
7.0
0.5
—
—
—
—
—
—
—
—
—
1.50
—
J/P
—
—
8.20
0.50
3.10
—
—
—
µs
µs
µs
—
1.20
—
J/P
—
—
4.00
3.60
—
—
V
—
1.00
—
µs
2.40
—
µs
—
370
—
µC
—
0.70
—
J/P
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
2
MITSUBISHI HVIGBT MODULES
CM200HG-130H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Item
Thermal resistance
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm
Min
—
—
—
Limits
Typ
—
—
18.0
Max
42.0
66.0
—
Min
7.0
3.0
1.0
—
600
26
56
—
—
Limits
Typ
—
—
—
0.5
—
—
—
54
0.38
Max
15.0
6.0
3.0
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
Conditions
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
Tc = 25°C
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. t(IGBT_off) definition is shown as follows.
Ic
time
t(IGBT_off)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
3
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
90%VGE
VGE
10%VGE
0
VCC
IC
90%IC
90%IC
di
10%VCE
10%IC
50%IC
10%IC
10%VCE
VCE
dt
0
td(on) tr
∫
Eon =
ton
t1
td(off)
t2
tf2
∫
ic·vce dt
t4
Eoff =
t1
t2
t3
t4
ic·vce dt
t3
tf = (0.9ic–0.1ic)/(di/dt)
toff = td(off)+tf
Fig. 1 – Definitions of switching times & energies of IGBT part
Qrr = –
IE(IF)
di/dt
∫
VEC(VR)
trr
di
0
Irr
10%IE
Erec = –
t6
∫
ie dt
0
t6
ie·vec dt
t5
dt
0
10%VEC
trr2
0 t5
t6
Fig. 2 – Definitions of reverse recovery charge & energy of FWDi part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
4
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
400
VCE = 20V
Tj = 125°C
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
VGE = 20V
300
VGE = 15V
VGE = 10V
VGE = 12V
200
VGE = 8V
100
300
200
100
Tj = 25°C
Tj = 125°C
0
0
2
4
6
0
8
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
400
12
400
300
300
EMITTER CURRENT (A)
COLLECTOR CURRENT (A)
VGE = 15V
200
100
200
100
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0
0
2
4
6
0
8
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0
2
4
6
8
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
5
MITSUBISHI HVIGBT MODULES
CM200HG-130H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
103
20
7
5
VCE = 3600V, IC = 200A
Tj = 25°C
3
2
15
GATE-EMITTER VOLTAGE (V)
Cies
CAPACITANCE (nF)
102
7
5
3
2
101
7
5
3
2
Coes
100
Cres
7
5
3
2
2 3
5 7 100
2 3
10
5
0
-5
-10
VGE = 0V, Tj = 25°C
f = 100kHz
10-1 -1
10
5 7 101
2 3
-15
5 7 102
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
4
4
VCC = 3600V, IC = 200A
VGE = ±15V, Tj = 125°C
Inductive load
SWITCHING ENERGIES (J/P)
VCC = 3600V, VGE = ±15V
RG(on) = 30Ω, RG(off) = 100Ω
Tj = 125°C, Inductive load
SWITCHING ENERGIES (J/P)
HIGH POWER SWITCHING USE
INSULATED TYPE
3
Eon
Eoff
2
1
Erec
3
2
Eon
Eoff
1
Erec
0
0
100
200
300
400
0
500
0
50
100
150
200
GATE RESISTOR (Ω)
COLLECTOR CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
6
MITSUBISHI HVIGBT MODULES
CM200HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
102
7
5
102
VCC = 3600V, VGE = ±15V
RG(on) = 30Ω, RG(off) = 100Ω
Tj = 125°C, Inductive load
7
5
REVERSE RECOVERY TIME (µs)
3
SWITCHING TIMES (µs)
2
101
td(off)
7
5
3
tf
2
td(on)
100
7
5
3
tr
2
10-1 1
10
2
3 4 5
7 102
2
3 4 5
7
5
3
3
2
2
101
103
7
5
7
5
lrr
3
3
2
2
trr
100
102
7
5
7
5
3
3
2
2
10-1 1
10
7 103
104
VCC = 3600V, VGE = ±15V
RG(on) = 30Ω, RG(off) = 100Ω
Tj = 125°C, Inductive load
2
3 4 5
REVERSE RECOVERY CURRENT (A)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS
(TYPICAL)
101
7 102
2
3 4 5
7 103
EMITTER CURRENT (A)
COLLECTOR CURRENT (A)
1.2
Rth(j–c)Q = 42K/kW
Rth(j–c)R = 66K/kW
1.0
n
Z th( j –c ) ( t ) =
0.8
Ri 1–exp
Σ
i=1


NORMALIZED TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
–
t

ti 
1
2
3
4
Ri [K/kW]
0.0059
0.0978
0.6571
0.2392
τ i [sec]
0.0002
0.0074
0.0732
0.4488
0.6
0.4
0.2
0 -3
10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
7
MITSUBISHI HVIGBT MODULES
CM200HG-130H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
500
5000
VCC ≤ 4500V, VGE = ±15V
Tj = 125°C, RG(off) ≥ 100Ω
VCC ≤ 4500V, VGE = ±15V
Tj = 125°C, RG(off) ≥ 100Ω
4000
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
400
300
200
100
0
HIGH POWER SWITCHING USE
INSULATED TYPE
3000
2000
1000
0
2000
4000
6000
0
8000
0
2000
4000
6000
8000
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
REVERSE RECOVERY CURRENT (A)
500
VCC ≤ 4500V, di/dt ≤ 1000A/µs
Tj = 125°C
400
300
200
100
0
0
2000
4000
6000
8000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
8
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