AP15T15GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Lower Gate Charge
D
D
▼ Simple Drive Requirement
D
D
▼ Surface Mount Package
G
▼ RoHS Compliant & Halogen-Free
SO-8
S
BVDSS
150V
RDS(ON)
150mΩ
ID
2.6A
S
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
S
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
150
V
+20
V
3
2.6
A
3
2.1
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
10
A
PD@TA=25℃
Total Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201105031
AP15T15GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
150
-
-
V
VGS=10V, ID=2A
-
-
150
mΩ
VGS=4.5V, ID=1A
-
-
250
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=120V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=2A
-
22.5
36
nC
Qgs
Gate-Source Charge
VDS=75V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
7.5
-
nC
td(on)
Turn-on Delay Time
VDS=75V
-
8
-
ns
tr
Rise Time
ID=1A
-
5.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
1050 1680
pF
Coss
Output Capacitance
VDS=15V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.9A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
55
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
140
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15T15GM-HF
30
20
10V
8.0V
7.0V
6.0V
V G =5.0V
ID , Drain Current (A)
20
10V
8.0V
7.0V
6.0V
V G =5.0V
o
T A =150 C
16
ID , Drain Current (A)
o
T A =25 C
10
12
8
4
0
0
0
4
8
12
16
20
0
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
16
20
Fig 2. Typical Output Characteristics
1.4
2.8
I D =2A
V G =10V
I D =1mA
2.4
1.2
Normalized RDS(ON)
Normalized BVDSS (V)
8
V DS , Drain-to-Source Voltage (V)
1
2.0
1.6
1.2
0.8
0.8
0.4
0.6
0.0
-50
0
50
100
150
-50
0
T j , Junction Temperature ( o C)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
8
1.6
I D =1mA
6
T j =150 o C
Normalized VGS(th) (V)
IS (A)
1.2
T j =25 o C
4
0.8
0.4
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15T15GM-HF
f=1.0MHz
1600
12
V DS =75V
V DS =90V
V DS =120V
8
1200
C (pF)
VGS , Gate to Source Voltage (V)
I D =2A
10
6
C iss
800
4
400
2
C oss
C rss
0
0
0
5
10
15
20
25
1
30
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
DUTY=0.5
10
ID (A)
Operation in this area
limited by RDS(ON)
100us
1ms
1
10ms
100ms
1s
0.1
0.01
DC
T A =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
0.01
Rthja = 125℃/W
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4