DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT Low On-Resistance Very low Gate Threshold Voltage, 1.0V Max Low Input Capacitance 0.6Ω @ VGS = 4.5V ID TA = +25°C 0.9A 0.8Ω @ VGS = 2.5V 0.7A Fast Switching Speed 1.0Ω @ VGS = 1.8V 0.5A ESD Protected Gate 1.6Ω @ VGS = 1.5V 0.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS 20V Features and Benefits RDS(ON) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: X1-DFN1212-3 Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Power Management Functions Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Load Switch Weight: 0.005 grams (Approximate) Drain Body Diode Gate Gate Protection Diode ESD PROTECTED Top View Bottom View Source Equivalent Circuit Pin-out Top view Ordering Information (Note 4) Part Number DMN2400UFD-7 Notes: Case X1-DFN1212-3 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information X1-DFN1212-3 K24 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) K24 YM Date Code Key Year 2011 Code Y Month Code Jan 1 2012 Z Feb 2 DMN2400UFD Document number: DS35475 Rev. 5 - 2 … … Mar 3 2015 C Apr 4 2016 D May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 2020 H Oct O 2021 I Nov N 2022 J Dec D February 2015 © Diodes Incorporated DMN2400UFD Maximum Ratings (@TA = +25°C unless otherwise specified.) NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 20 ±12 0.9 0.7 ID A 0.7 0.5 3.0 0.8 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 6) Units V V IDM IS A A A Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RJA PD RJA RJc TJ, TSTG Steady State Steady State Value 0.4 280 0.8 140 112 -55 to +150 (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 20 - V Zero Gate Voltage Drain Current TJ = +25°C IDSS - - Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS - - 80 100 ±1.0 VGS(th) 0.45 - Static Drain-Source On-Resistance RDS (ON) 0.35 0.45 0.6 0.7 1.4 0.7 1.0 0.6 0.8 1.0 1.6 1.2 37.0 5.7 4.2 68 0.5 0.07 0.1 4.06 7.28 13.74 10.54 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Units W °C/W W °C/W °C/W °C |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - - nA µA V Ω S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250μA VDS = 4.5V, VGS = 0V VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 200mA VGS = 1.8V, ID = 100mA VGS = 1.5V, ID = 50mA VDS = 3V, ID = 200mA VGS = 0V, IS = 500mA, VDS =16V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2400UFD Document number: DS35475 Rev. 5 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN2400UFD 2.0 1.5 VGS = 4.5V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.5 VGS = 2.0V VGS = 1.8V 1.0 VGS = 1.5V 0.5 1.0 0.5 TA = 150°C TA = 125°C TA = 85°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1.6 VGS = 1.5V 0.8 VGS = 1.8V VGS = 2.5V 0.4 VGS = 5.0V 0 0 VGS = 4.5V 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS = 4.5V ID = 1.0A VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2400UFD Document number: DS35475 Rev. 5 - 2 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 0.8 VGS = 4.5V 0.6 TA = 150°C TA = 125°C 0.4 TA = 85°C TA = 25°C 0.2 TA = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 1.4 0 Fig. 2 Typical Transfer Characteristics 2.0 1.2 TA = 25°C TA = -55°C 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VGS = 2.5V 3 of 6 www.diodes.com 0.4 0.8 1.2 1.6 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature February 2015 © Diodes Incorporated DMN2400UFD 1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 1.2 TA = 25°C 0.8 0.4 0.2 0 -50 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 f = 1MHz C, CAPACITANCE (pF) 50 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 60 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 1,000 20 TA = 150°C 100 T A = 125°C 10 T A = 85°C TA = -55°C 1 TA = 25°C 0.1 2 4 6 8 10 12 14 16 18 20 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 5 VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT 1.2 4 VDS = 10V ID = 250mA 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2400UFD Document number: DS35475 Rev. 5 - 2 0.6 4 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN2400UFD r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 RJA(t) = r(t) * RJA RJA = 261°C/W D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.000001 t1 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.30 All Dimensions in mm A A3 A1 D e b1 (2x) E L b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Y X1 (2x) Y2 Dimensions C X X1 Y Y1 Y2 Value (in mm) 0.80 0.42 0.32 0.50 0.50 1.50 Y1 (2x) C DMN2400UFD Document number: DS35475 Rev. 5 - 2 5 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN2400UFD NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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